double CalculateDrainCap(
double width, int type,
double heightTransistorRegion, Technology tech) {
double drainCap = 0;
if (type == NMOS)
CalculateGateCapacitance(INV, 1, width, 0, heightTransistorRegion, tech, NULL, &drainCap);
else
CalculateGateCapacitance(INV, 1, 0, width, heightTransistorRegion, tech, NULL, &drainCap);
return drainCap;
}
void Comparator::CalculateRC() {
if (!initialized) {
cout << "[Comparator] Error: Require initialization first!" << endl;
} else {
for (int i = 0; i < COMPARATOR_INV_CHAIN_LEN; i++) {
CalculateGateCapacitance(INV, 1, widthNMOSInv[i], widthPMOSInv[i], tech->featureSize * MAX_TRANSISTOR_HEIGHT, *tech, &(capInput[i]), &(capOutput[i]));
}
double capComp, capTemp;
CalculateGateCapacitance(NAND, 2, widthNMOSComp, 0, tech->featureSize*40, *tech, &capTemp, &capComp);
capBottom = capOutput[COMPARATOR_INV_CHAIN_LEN-1] + numTagBits * capComp;
capTop = numTagBits * capComp + CalculateDrainCap(widthPMOSComp, PMOS, tech->featureSize * MAX_TRANSISTOR_HEIGHT, *tech) + capLoad;
resBottom = CalculateOnResistance(widthNMOSInv[COMPARATOR_INV_CHAIN_LEN-1], NMOS, inputParameter->temperature, *tech);
resTop = 2 * CalculateOnResistance(widthNMOSComp, NMOS, inputParameter->temperature, *tech);
}
}
void TSV::_CalculateLatencyAndPower(double _rampInput, double &_dynamicEnergy, double &_latency)
{
//Buffer chain delay and Dynamic Power
double delay = 0.0;
double rd, tf, this_delay, c_load, c_intrinsic;
double capInput, capOutput;
double rampInput, rampOutput;
double beta = 0.5; /* Carried over from CACTI3DD. */
if (num_gates > 0) {
rd = CalculateOnResistance(w_TSV_n[0], NMOS, inputParameter->temperature, *tech);
CalculateGateCapacitance(INV, 1, w_TSV_n[1], w_TSV_p[1], tech->featureSize * MAX_TRANSISTOR_HEIGHT, *tech, &capInput, &capOutput);
c_load = capInput + capOutput;
c_intrinsic = CalculateDrainCap(w_TSV_p[0], PMOS, tech->featureSize * MAX_TRANSISTOR_HEIGHT, *tech)
+ CalculateDrainCap(w_TSV_n[0], NMOS, tech->featureSize * MAX_TRANSISTOR_HEIGHT, *tech);
tf = rd * (c_intrinsic + c_load);
// NVSIM3D - _rampInput should be subarray's senseAmpMuxLev2 rampOutput
rampInput = _rampInput;
this_delay = horowitz(tf, beta, rampInput, &rampOutput);
delay += this_delay;
double Vdd = tech->vdd;
_dynamicEnergy = (c_load + c_intrinsic) * Vdd * Vdd;
int i;
for (i = 1; i < num_gates - 1; ++i)
{
rd = CalculateOnResistance(w_TSV_n[i], NMOS, inputParameter->temperature, *tech);
CalculateGateCapacitance(INV, 1, w_TSV_n[i+1], w_TSV_p[i+1], tech->featureSize * MAX_TRANSISTOR_HEIGHT, *tech, &capInput, &capOutput);
c_load = capInput + capOutput;
c_intrinsic = CalculateDrainCap(w_TSV_p[i], PMOS, tech->featureSize * MAX_TRANSISTOR_HEIGHT, *tech)
+ CalculateDrainCap(w_TSV_n[i], NMOS, tech->featureSize * MAX_TRANSISTOR_HEIGHT, *tech);
tf = rd * (c_intrinsic + c_load);
rampInput = rampOutput;
this_delay = horowitz(tf, beta, rampInput, &rampOutput);
delay += this_delay;
_dynamicEnergy += (c_load + c_intrinsic) * Vdd * Vdd;
}
// add delay of final inverter that drives the TSV
i = num_gates - 1;
c_load = C_load_TSV;
rd = CalculateOnResistance(w_TSV_n[i], NMOS, inputParameter->temperature, *tech);
c_intrinsic = CalculateDrainCap(w_TSV_p[i], PMOS, tech->featureSize * MAX_TRANSISTOR_HEIGHT, *tech)
+ CalculateDrainCap(w_TSV_n[i], NMOS, tech->featureSize * MAX_TRANSISTOR_HEIGHT, *tech);
double R_TSV_out = res;
tf = rd * (c_intrinsic + c_load) + R_TSV_out * c_load / 2;
rampInput = rampOutput;
this_delay = horowitz(tf, beta, rampInput, &rampOutput);
delay += this_delay;
_dynamicEnergy += (c_load + c_intrinsic) * Vdd * Vdd;
_latency = delay;
} else {
rampInput = _rampInput;
c_load = cap;
double R_TSV_out = res;
tf = R_TSV_out * c_load / 2;
double Vdd = tech->vdd;
this_delay = horowitz(tf, beta, rampInput, &rampOutput);
delay += this_delay;
_dynamicEnergy += (c_load) * Vdd * Vdd;
_latency = delay;
}
}