GitHub - Ting2003/pad

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Name		Name	Last commit message	Last commit date
Latest commit History 56 Commits
Makefile		Makefile
README		README
algebra.cpp		algebra.cpp
algebra.h		algebra.h
block.cpp		block.cpp
block.h		block.h
circuit.cpp		circuit.cpp
circuit.h		circuit.h
circularqueue.cpp		circularqueue.cpp
circularqueue.h		circularqueue.h
global.h		global.h
hash_mat.cpp		hash_mat.cpp
hash_mat.h		hash_mat.h
main.cpp		main.cpp
main.h		main.h
map_mat.cpp		map_mat.cpp
map_mat.h		map_mat.h
mg_circuit.cpp		mg_circuit.cpp
mg_circuit.h		mg_circuit.h
net.cpp		net.cpp
net.h		net.h
node.cpp		node.cpp
node.h		node.h
parser.cpp		parser.cpp
parser.h		parser.h
point.cpp		point.cpp
point.h		point.h
test.cpp		test.cpp
transient.cpp		transient.cpp
transient.h		transient.h
triplet.cpp		triplet.cpp
triplet.h		triplet.h
util.cpp		util.cpp
util.h		util.h
vec.cpp		vec.cpp
vec.h		vec.h

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1. Evenly distribute the power pads, compute the IR drop values for 
   DC.
2. Compute the power for each node, use P = VI. 
   These power are left for the device layer: 
	1). The value should be high, since most of 
		energy should be kept for device layer.
	2). The lower number represents high IR drop area. The 
		aim is to add power pad numbers to increase the P 
		in these area.
3. Use matlab to generate the view for initial IR drop and Power 
   distribution.
4. Use the ratio of IR drop to do the first step of power
   pad distribution.