/* Tag array wordline delay (see section 6.3 of tech report) */
double SIM_wordline_tag_delay(int C, int A, int Ntspd, int Ntwl, double inrisetime, double *outrisetime)
{
double tf,m,a,b,c;
double Cline,Rline,Ceq,nextinputtime;
int tagbits;
double Tworddrivedel,Twordchargedel;
/* number of tag bits */
tagbits = PARM(ADDRESS_BITS)+2-(int)logtwo((double)C)+(int)logtwo((double)A);
/* first stage */
Ceq = SIM_draincap(Wdecinvn,NCH,1) + SIM_draincap(Wdecinvp,PCH,1) +
SIM_gatecap(Wdecinvn+Wdecinvp,20.0);
tf = SIM_transreson(Wdecinvn,NCH,1)*Ceq;
Tworddrivedel = SIM_horowitz(inrisetime,tf,PARM(VSINV),PARM(VSINV),RISE);
nextinputtime = Tworddrivedel/(1.0-PARM(VSINV));
/* second stage */
Cline = (SIM_gatecappass(Wmemcella,(BitWidth-2*Wmemcella)/2.0)+
SIM_gatecappass(Wmemcella,(BitWidth-2*Wmemcella)/2.0)+
Cwordmetal)*tagbits*A*Ntspd/Ntwl+
SIM_draincap(Wdecinvn,NCH,1) + SIM_draincap(Wdecinvp,PCH,1);
Rline = Rwordmetal*tagbits*A*Ntspd/(2*Ntwl);
tf = (SIM_transreson(Wdecinvp,PCH,1)+Rline)*Cline;
Twordchargedel = SIM_horowitz(nextinputtime,tf,PARM(VSINV),PARM(VSINV),FALL);
*outrisetime = Twordchargedel/PARM(VSINV);
return(Tworddrivedel+Twordchargedel);
}
/* Tag array bitline: (see section 6.4 in tech report) */
double SIM_bitline_tag_delay(int C, int A, int B, int Ntwl, int Ntbl, int Ntspd, double inrisetime, double *outrisetime)
{
double Tbit,Cline,Ccolmux,Rlineb,r1,r2,c1,c2,a,b,c;
double m,tstep;
double Cbitrow; /* bitline capacitance due to access transistor */
int rows,cols;
Cbitrow = SIM_draincap(Wmemcella,NCH,1)/2.0; /* due to shared contact */
rows = C/(B*A*Ntbl*Ntspd);
cols = 8*B*A*Ntspd/Ntwl;
if (Ntbl*Ntspd == 1) {
Cline = rows*(Cbitrow+Cbitmetal)+2*SIM_draincap(Wbitpreequ,PCH,1);
Ccolmux = 2*SIM_gatecap(WsenseQ1to4,10.0);
Rlineb = Rbitmetal*rows/2.0;
r1 = Rlineb;
} else {
Cline = rows*(Cbitrow+Cbitmetal) + 2*SIM_draincap(Wbitpreequ,PCH,1) +
SIM_draincap(Wbitmuxn,NCH,1);
Ccolmux = Ntspd*Ntbl*(SIM_draincap(Wbitmuxn,NCH,1))+2*SIM_gatecap(WsenseQ1to4,10.0);
Rlineb = Rbitmetal*rows/2.0;
r1 = Rlineb +
SIM_transreson(Wbitmuxn,NCH,1);
}
r2 = SIM_transreson(Wmemcella,NCH,1) +
SIM_transreson(Wmemcella*Wmemcellbscale,NCH,1);
c1 = Ccolmux;
c2 = Cline;
tstep = (r2*c2+(r1+r2)*c1)*log((Vbitpre)/(Vbitpre-Vbitsense));
/* take into account input rise time */
m = Vdd/inrisetime;
if (tstep <= (0.5*(Vdd-Vt)/m)) {
a = m;
b = 2*((Vdd*0.5)-Vt);
c = -2*tstep*(Vdd-Vt)+1/m*((Vdd*0.5)-Vt)*
((Vdd*0.5)-Vt);
Tbit = (-b+sqrt(b*b-4*a*c))/(2*a);
} else {
Tbit = tstep + (Vdd+Vt)/(2*m) - (Vdd*0.5)/m;
}
*outrisetime = Tbit/(log((Vbitpre-Vbitsense)/Vdd));
return(Tbit);
}
/* switch cap of request signal (round robin arbiter) */
static double SIM_rr_arbiter_req_cap(double length)
{
double Ctotal = 0;
/* part 1: gate cap of 2 NOR gates */
/* FIXME: need actual size */
Ctotal += 2 * SIM_gatecap(WdecNORn + WdecNORp, 0);
/* part 2: inverter */
/* FIXME: need actual size */
Ctotal += SIM_draincap(Wdecinvn, NCH, 1) + SIM_draincap(Wdecinvp, PCH, 1) +
SIM_gatecap(Wdecinvn + Wdecinvp, 0);
/* part 3: wire cap */
Ctotal += length * Cmetal;
return Ctotal;
}
/* switch cap of priority signal (round robin arbiter) */
static double SIM_rr_arbiter_pri_cap()
{
double Ctotal = 0;
/* part 1: gate cap of NOR gate */
/* FIXME: need actual size */
Ctotal += SIM_gatecap(WdecNORn + WdecNORp, 0);
return Ctotal;
}
/* switch cap of priority signal (matrix arbiter) */
static double SIM_matrix_arbiter_pri_cap(u_int req_width)
{
double Ctotal = 0;
/* part 1: gate cap of NOR gates (2 groups) */
Ctotal += 2 * SIM_gatecap(WdecNORn + WdecNORp, 0);
/* no inverter because priority signal is kept by a flip flop */
return Ctotal;
}
/* switch cap of request signal (matrix arbiter) */
static double SIM_matrix_arbiter_req_cap(u_int req_width, double length)
{
double Ctotal = 0;
/* FIXME: all need actual sizes */
/* part 1: gate cap of NOR gates */
Ctotal += (req_width - 1) * SIM_gatecap(WdecNORn + WdecNORp, 0);
/* part 2: inverter */
Ctotal += SIM_draincap(Wdecinvn, NCH, 1) + SIM_draincap(Wdecinvp, PCH, 1) +
SIM_gatecap(Wdecinvn + Wdecinvp, 0);
/* part 3: gate cap of the "huge" NOR gate */
Ctotal += SIM_gatecap(WdecNORn + WdecNORp, 0);
/* part 4: wire cap */
Ctotal += length * Cmetal;
return Ctotal;
}
/* switch cap of internal node (matrix arbiter) */
static double SIM_matrix_arbiter_int_cap()
{
double Ctotal = 0;
/* part 1: drain cap of NOR gate */
Ctotal += 2 * SIM_draincap(WdecNORn, NCH, 1) + SIM_draincap(WdecNORp, PCH, 2);
/* part 2: gate cap of the "huge" NOR gate */
Ctotal += SIM_gatecap(WdecNORn + WdecNORp, 0);
return Ctotal;
}
/* Sel inverter delay (part of the output driver) see section 6.8 */
double SIM_selb_delay_tag_path(double inrisetime, double *outrisetime)
{
double Ceq,Tst1,tf;
Ceq = SIM_draincap(Woutdrvseln,NCH,1)+SIM_draincap(Woutdrvselp,PCH,1)+
SIM_gatecap(Woutdrvnandn+Woutdrvnandp,10.0);
tf = Ceq*SIM_transreson(Woutdrvseln,NCH,1);
Tst1 = SIM_horowitz(inrisetime,tf,PARM(VTHOUTDRINV),PARM(VTHOUTDRNAND),RISE);
*outrisetime = Tst1/(1.0-PARM(VTHOUTDRNAND));
return(Tst1);
}
/* Delay of the multiplexor Driver (see section 6.7) */
double SIM_mux_driver_delay(int C, int B, int A, int Ndbl, int Nspd, int Ndwl, int Ntbl, int Ntspd, double inputtime, double *outputtime)
{
double Ceq,Req,tf,nextinputtime;
double Tst1,Tst2,Tst3;
/* first driver stage - Inverte "match" to produce "matchb" */
/* the critical path is the DESELECTED case, so consider what
happens when the address bit is true, but match goes low */
Ceq = SIM_gatecap(WmuxdrvNORn+WmuxdrvNORp,15.0)*(8*B/PARM(BITOUT)) +
SIM_draincap(Wmuxdrv12n,NCH,1) + SIM_draincap(Wmuxdrv12p,PCH,1);
Req = SIM_transreson(Wmuxdrv12p,PCH,1);
tf = Ceq*Req;
Tst1 = SIM_horowitz(inputtime,tf,PARM(VTHMUXDRV1),PARM(VTHMUXDRV2),FALL);
nextinputtime = Tst1/PARM(VTHMUXDRV2);
/* second driver stage - NOR "matchb" with address bits to produce sel */
Ceq = SIM_gatecap(Wmuxdrv3n+Wmuxdrv3p,15.0) + 2*SIM_draincap(WmuxdrvNORn,NCH,1) +
SIM_draincap(WmuxdrvNORp,PCH,2);
Req = SIM_transreson(WmuxdrvNORn,NCH,1);
tf = Ceq*Req;
Tst2 = SIM_horowitz(nextinputtime,tf,PARM(VTHMUXDRV2),PARM(VTHMUXDRV3),RISE);
nextinputtime = Tst2/(1-PARM(VTHMUXDRV3));
/* third driver stage - invert "select" to produce "select bar" */
Ceq = PARM(BITOUT)*SIM_gatecap(Woutdrvseln+Woutdrvselp+Woutdrvnorn+Woutdrvnorp,20.0)+
SIM_draincap(Wmuxdrv3p,PCH,1) + SIM_draincap(Wmuxdrv3n,NCH,1) +
Cwordmetal*8*B*A*Nspd*Ndbl/2.0;
Req = (Rwordmetal*8*B*A*Nspd*Ndbl/2)/2 + SIM_transreson(Wmuxdrv3p,PCH,1);
tf = Ceq*Req;
Tst3 = SIM_horowitz(nextinputtime,tf,PARM(VTHMUXDRV3),PARM(VTHOUTDRINV),FALL);
*outputtime = Tst3/(PARM(VTHOUTDRINV));
return(Tst1 + Tst2 + Tst3);
}
/* switch cap of carry signal (round robin arbiter) */
static double SIM_rr_arbiter_carry_cap()
{
double Ctotal = 0;
/* part 1: drain cap of NOR gate (this block) */
/* FIXME: need actual size */
Ctotal += 2 * SIM_draincap(WdecNORn, NCH, 1) + SIM_draincap(WdecNORp, PCH, 2);
/* part 2: gate cap of NOR gate (next block) */
/* FIXME: need actual size */
Ctotal += SIM_gatecap(WdecNORn + WdecNORp, 0);
return Ctotal;
}
/* This routine calculates the extra time required after an access before
* the next access can occur [ie. it returns (cycle time-access time)].
*/
double SIM_precharge_delay(double worddata)
{
double Ceq,tf,pretime;
/* as discussed in the tech report, the delay is the delay of
4 inverter delays (each with fanout of 4) plus the delay of
the wordline */
Ceq = SIM_draincap(Wdecinvn,NCH,1)+SIM_draincap(Wdecinvp,PCH,1)+
4*SIM_gatecap(Wdecinvn+Wdecinvp,0.0);
tf = Ceq*SIM_transreson(Wdecinvn,NCH,1);
pretime = 4*SIM_horowitz(0.0,tf,0.5,0.5,RISE) + worddata;
return(pretime);
}
/* Data array wordline delay (see section 6.2 of tech report) */
double SIM_wordline_delay(int B, int A, int Ndwl, int Nspd, double inrisetime, double *outrisetime)
{
double Rpdrive,nextrisetime;
double desiredrisetime,psize,nsize;
double tf,nextinputtime,Ceq,Req,Rline,Cline;
int cols;
double Tworddrivedel,Twordchargedel;
cols = 8*B*A*Nspd/Ndwl;
/* Choose a transistor size that makes sense */
/* Use a first-order approx */
desiredrisetime = krise*log((double)(cols))/2.0;
Cline = (SIM_gatecappass(Wmemcella,0.0)+
SIM_gatecappass(Wmemcella,0.0)+
Cwordmetal)*cols;
Rpdrive = desiredrisetime/(Cline*log(PARM(VSINV))*-1.0);
psize = SIM_restowidth(Rpdrive,PCH);
if (psize > Wworddrivemax) {
psize = Wworddrivemax;
}
/* Now that we have a reasonable psize, do the rest as before */
/* If we keep the ratio the same as the tag wordline driver,
the threshold voltage will be close to VSINV */
nsize = psize * Wdecinvn/Wdecinvp;
Ceq = SIM_draincap(Wdecinvn,NCH,1) + SIM_draincap(Wdecinvp,PCH,1) +
SIM_gatecap(nsize+psize,20.0);
tf = SIM_transreson(Wdecinvn,NCH,1)*Ceq;
Tworddrivedel = SIM_horowitz(inrisetime,tf,PARM(VSINV),PARM(VSINV),RISE);
nextinputtime = Tworddrivedel/(1.0-PARM(VSINV));
Cline = (SIM_gatecappass(Wmemcella,(BitWidth-2*Wmemcella)/2.0)+
SIM_gatecappass(Wmemcella,(BitWidth-2*Wmemcella)/2.0)+
Cwordmetal)*cols+
SIM_draincap(nsize,NCH,1) + SIM_draincap(psize,PCH,1);
Rline = Rwordmetal*cols/2;
tf = (SIM_transreson(psize,PCH,1)+Rline)*Cline;
Twordchargedel = SIM_horowitz(nextinputtime,tf,PARM(VSINV),PARM(VSINV),FALL);
*outrisetime = Twordchargedel/PARM(VSINV);
return(Tworddrivedel+Twordchargedel);
}
/* Data output delay (data side) -- see section 6.8
This is the time through the NAND/NOR gate and the final inverter
assuming sel is already present */
double SIM_dataoutput_delay(int C, int B, int A, int Ndbl, int Nspd, int Ndwl,
double inrisetime, double *outrisetime)
{
double Ceq,Rwire,Rline;
double aspectRatio; /* as height over width */
double ramBlocks; /* number of RAM blocks */
double tf;
double nordel,outdel,nextinputtime;
double hstack,vstack;
/* calculate some layout info */
aspectRatio = (2.0*C)/(8.0*B*B*A*A*Ndbl*Ndbl*Nspd*Nspd);
hstack = (aspectRatio > 1.0) ? aspectRatio : 1.0/aspectRatio;
ramBlocks = Ndwl*Ndbl;
hstack = hstack * sqrt(ramBlocks/ hstack);
vstack = ramBlocks/ hstack;
/* Delay of NOR gate */
Ceq = 2*SIM_draincap(Woutdrvnorn,NCH,1)+SIM_draincap(Woutdrvnorp,PCH,2)+
SIM_gatecap(Woutdrivern,10.0);
tf = Ceq*SIM_transreson(Woutdrvnorp,PCH,2);
nordel = SIM_horowitz(inrisetime,tf,PARM(VTHOUTDRNOR),PARM(VTHOUTDRIVE),FALL);
nextinputtime = nordel/(PARM(VTHOUTDRIVE));
/* Delay of final output driver */
Ceq = (SIM_draincap(Woutdrivern,NCH,1)+SIM_draincap(Woutdriverp,PCH,1))*
((8*B*A)/PARM(BITOUT)) +
Cwordmetal*(8*B*A*Nspd* (vstack)) + Cout;
Rwire = Rwordmetal*(8*B*A*Nspd* (vstack))/2;
tf = Ceq*(SIM_transreson(Woutdriverp,PCH,1)+Rwire);
outdel = SIM_horowitz(nextinputtime,tf,PARM(VTHOUTDRIVE),0.5,RISE);
*outrisetime = outdel/0.5;
return(outdel+nordel);
}
/* Comparator Delay (see section 6.6) */
double SIM_compare_time(int C, int A, int Ntbl, int Ntspd, double inputtime, double *outputtime)
{
double Req,Ceq,tf,st1del,st2del,st3del,nextinputtime,m;
double c1,c2,r1,r2,tstep,a,b,c;
double Tcomparatorni;
int cols,tagbits;
/* First Inverter */
Ceq = SIM_gatecap(Wcompinvn2+Wcompinvp2,10.0) +
SIM_draincap(Wcompinvp1,PCH,1) + SIM_draincap(Wcompinvn1,NCH,1);
Req = SIM_transreson(Wcompinvp1,PCH,1);
tf = Req*Ceq;
st1del = SIM_horowitz(inputtime,tf,PARM(VTHCOMPINV),PARM(VTHCOMPINV),FALL);
nextinputtime = st1del/PARM(VTHCOMPINV);
/* Second Inverter */
Ceq = SIM_gatecap(Wcompinvn3+Wcompinvp3,10.0) +
SIM_draincap(Wcompinvp2,PCH,1) + SIM_draincap(Wcompinvn2,NCH,1);
Req = SIM_transreson(Wcompinvn2,NCH,1);
tf = Req*Ceq;
st2del = SIM_horowitz(inputtime,tf,PARM(VTHCOMPINV),PARM(VTHCOMPINV),RISE);
nextinputtime = st1del/(1.0-PARM(VTHCOMPINV));
/* Third Inverter */
Ceq = SIM_gatecap(Wevalinvn+Wevalinvp,10.0) +
SIM_draincap(Wcompinvp3,PCH,1) + SIM_draincap(Wcompinvn3,NCH,1);
Req = SIM_transreson(Wcompinvp3,PCH,1);
tf = Req*Ceq;
st3del = SIM_horowitz(nextinputtime,tf,PARM(VTHCOMPINV),PARM(VTHEVALINV),FALL);
nextinputtime = st1del/(PARM(VTHEVALINV));
/* Final Inverter (virtual ground driver) discharging compare part */
tagbits = PARM(ADDRESS_BITS) - (int)logtwo((double)C) + (int)logtwo((double)A);
cols = tagbits*Ntbl*Ntspd;
r1 = SIM_transreson(Wcompn,NCH,2);
r2 = SIM_transresswitch(Wevalinvn,NCH,1);
c2 = (tagbits)*(SIM_draincap(Wcompn,NCH,1)+SIM_draincap(Wcompn,NCH,2))+
SIM_draincap(Wevalinvp,PCH,1) + SIM_draincap(Wevalinvn,NCH,1);
c1 = (tagbits)*(SIM_draincap(Wcompn,NCH,1)+SIM_draincap(Wcompn,NCH,2))
+SIM_draincap(Wcompp,PCH,1) + SIM_gatecap(Wmuxdrv12n+Wmuxdrv12p,20.0) +
cols*Cwordmetal;
/* time to go to threshold of mux driver */
tstep = (r2*c2+(r1+r2)*c1)*log(1.0/PARM(VTHMUXDRV1));
/* take into account non-zero input rise time */
m = Vdd/nextinputtime;
if ((tstep) <= (0.5*(Vdd-Vt)/m)) {
a = m;
b = 2*((Vdd*PARM(VTHEVALINV))-Vt);
c = -2*(tstep)*(Vdd-Vt)+1/m*((Vdd*PARM(VTHEVALINV))-Vt)*((Vdd*PARM(VTHEVALINV))-Vt);
Tcomparatorni = (-b+sqrt(b*b-4*a*c))/(2*a);
} else {
Tcomparatorni = (tstep) + (Vdd+Vt)/(2*m) - (Vdd*PARM(VTHEVALINV))/m;
}
*outputtime = Tcomparatorni/(1.0-PARM(VTHMUXDRV1));
return(Tcomparatorni+st1del+st2del+st3del);
}
/* Decoder delay in the tag array (see section 6.1 of tech report) */
double SIM_decoder_tag_delay(int C, int B, int A, int Ndwl, int Ndbl, int Nspd, int Ntwl, int Ntbl, int Ntspd,
double *Tdecdrive, double *Tdecoder1, double *Tdecoder2, double *outrisetime)
{
double Ceq,Req,Rwire,rows,tf,nextinputtime,vth = 0,tstep,m,a,b,c;
int numstack;
/* Calculate rise time. Consider two inverters */
Ceq = SIM_draincap(Wdecdrivep,PCH,1)+SIM_draincap(Wdecdriven,NCH,1) +
SIM_gatecap(Wdecdrivep+Wdecdriven,0.0);
tf = Ceq*SIM_transreson(Wdecdriven,NCH,1);
nextinputtime = SIM_horowitz(0.0,tf,PARM(VTHINV100x60),PARM(VTHINV100x60),FALL)/
(PARM(VTHINV100x60));
Ceq = SIM_draincap(Wdecdrivep,PCH,1)+SIM_draincap(Wdecdriven,NCH,1) +
SIM_gatecap(Wdecdrivep+Wdecdriven,0.0);
tf = Ceq*SIM_transreson(Wdecdriven,NCH,1);
nextinputtime = SIM_horowitz(nextinputtime,tf,PARM(VTHINV100x60),PARM(VTHINV100x60),
RISE)/
(1.0-PARM(VTHINV100x60));
/* First stage: driving the decoders */
rows = C/(8*B*A*Ntbl*Ntspd);
Ceq = SIM_draincap(Wdecdrivep,PCH,1)+SIM_draincap(Wdecdriven,NCH,1) +
4*SIM_gatecap(Wdec3to8n+Wdec3to8p,10.0)*(Ntwl*Ntbl)+
Cwordmetal*0.25*8*B*A*Ntbl*Ntspd;
Rwire = Rwordmetal*0.125*8*B*A*Ntbl*Ntspd;
tf = (Rwire + SIM_transreson(Wdecdrivep,PCH,1))*Ceq;
*Tdecdrive = SIM_horowitz(nextinputtime,tf,PARM(VTHINV100x60),PARM(VTHNAND60x90),
FALL);
nextinputtime = *Tdecdrive/PARM(VTHNAND60x90);
/* second stage: driving a bunch of nor gates with a nand */
numstack =
(int)(ceil((1.0/3.0)*logtwo( (double)((double)C/(double)(B*A*Ntbl*Ntspd)))));
if (numstack==0) numstack = 1;
if (numstack>5) numstack = 5;
Ceq = 3*SIM_draincap(Wdec3to8p,PCH,1) +SIM_draincap(Wdec3to8n,NCH,3) +
SIM_gatecap(WdecNORn+WdecNORp,((numstack*40)+20.0))*rows +
Cbitmetal*rows*8;
Rwire = Rbitmetal*rows*8/2;
tf = Ceq*(Rwire+SIM_transreson(Wdec3to8n,NCH,3));
/* we only want to charge the output to the threshold of the
nor gate. But the threshold depends on the number of inputs
to the nor. */
switch(numstack) {
case 1: vth = PARM(VTHNOR12x4x1); break;
case 2: vth = PARM(VTHNOR12x4x2); break;
case 3: vth = PARM(VTHNOR12x4x3); break;
case 4: vth = PARM(VTHNOR12x4x4); break;
case 5: vth = PARM(VTHNOR12x4x4); break;
case 6: vth = PARM(VTHNOR12x4x4); break;
default: printf("error:numstack=%d\n",numstack);
}
*Tdecoder1 = SIM_horowitz(nextinputtime,tf,PARM(VTHNAND60x90),vth,RISE);
nextinputtime = *Tdecoder1/(1.0-vth);
/* Final stage: driving an inverter with the nor */
Req = SIM_transreson(WdecNORp,PCH,numstack);
Ceq = (SIM_gatecap(Wdecinvn+Wdecinvp,20.0)+
numstack*SIM_draincap(WdecNORn,NCH,1)+
SIM_draincap(WdecNORp,PCH,numstack));
tf = Req*Ceq;
*Tdecoder2 = SIM_horowitz(nextinputtime,tf,vth,PARM(VSINV),FALL);
*outrisetime = *Tdecoder2/(PARM(VSINV));
return(*Tdecdrive+*Tdecoder1+*Tdecoder2);
}
/*
* width - gate width in um (length is Leff)
* wirelength - poly wire length going to gate in lambda
*
* return gate capacitance in Farads
*/
double SIM_gatecappass(double width, double wirelength)
{
return(SIM_gatecap(width,wirelength));
/* return(width*Leff*PARM(Cgatepass)+wirelength*Cpolywire*Leff); */
}
