/**
* @brief Erases PAGE and PAGE1 and writes VALID_PAGE header to PAGE
* @param None
* @retval Status of the last operation (Flash write or erase) done during
* EEPROM formating
*/
static FLASH_Status EE_Format(void) {
FLASH_Status FlashStatus = FLASH_COMPLETE;
/* Erase Page0 */
FlashStatus = FLASH_EraseSector(PAGE0_ID, FLASH_VOLTAGE_RANGE );
/* If erase operation was failed, a Flash error code is returned */
if (FlashStatus != FLASH_COMPLETE) {
return FlashStatus;
}
/* Set Page0 as valid page: Write VALID_PAGE at Page0 base address */
FlashStatus = FLASH_ProgramHalfWord(PAGE0_BASE_ADDRESS, VALID_PAGE );
/* If program operation was failed, a Flash error code is returned */
if (FlashStatus != FLASH_COMPLETE) {
return FlashStatus;
}
/* Erase Page1 */
FlashStatus = FLASH_EraseSector(PAGE1_ID, FLASH_VOLTAGE_RANGE );
/* Return Page1 erase operation status */
return FlashStatus;
}
FLASH_Status eraseHelper(uint32_t pageAddress)
{
#if defined(SERIES_STM32F37x) || defined(SERIES_STM32F30x)
return FLASH_ErasePage(pageAddress);
#else
if (pageAddress == PAGE0_BASE_ADDRESS)
return FLASH_EraseSector(PAGE0_ID, VOLTAGE_RANGE);
else if (pageAddress == PAGE1_BASE_ADDRESS)
return FLASH_EraseSector(PAGE1_ID, VOLTAGE_RANGE);
else
return FLASH_ERROR_PROGRAM;
#endif
}
u8 bsp_Firmware_Erase(u8 APP_Select)
{
u8 status=0;
FLASH_Unlock(); //解锁
FLASH_DataCacheCmd(DISABLE);//FLASH擦除期间,必须禁止数据缓存
FLASH_ClearFlag(FLASH_FLAG_EOP|FLASH_FLAG_OPERR|FLASH_FLAG_WRPERR| FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
if(APP_Select)
status=FLASH_EraseSector(FLASH_Sector_6 ,VoltageRange_3);//VCC=2.7~3.6V之间!!
else
status=FLASH_EraseSector(FLASH_Sector_5 ,VoltageRange_3);//VCC=2.7~3.6V之间!!
MCU_WriteStatus=status;
return MCU_WriteStatus;
}
void Flash_EraseDataBuffer()
{
FLASH_Unlock();
FLASH_ClearFlag( FLASH_FLAG_EOP | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
// Erase Sectors
// 8-10 is data logger
FLASH_EraseSector(FLASH_Sector_8, VoltageRange_3);
FLASH_EraseSector(FLASH_Sector_9, VoltageRange_3);
FLASH_EraseSector(FLASH_Sector_10, VoltageRange_3);
Flash_ResetFlashAddress();
FLASH_Lock();
}
/**
* @brief Main program
* @param None
* @retval None
*/
ErrorStatus eep_erase( void )
{
ErrorStatus Err = SUCCESS;
/* Enable the flash control register access */
FLASH_Unlock();
/* Erase the user Flash area ************************************************/
/* area defined by FLASH_USER_START_ADDR and FLASH_USER_END_ADDR */
/* Clear pending flags (if any) */
FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
/* Get the number of the start and end sectors */
uwStartSector = GetSector(FLASH_USER_START_ADDR);
/* Device voltage range supposed to be [2.7V to 3.6V], the operation will
be done by word */
if (FLASH_EraseSector(uwStartSector, VoltageRange_3) != FLASH_COMPLETE)
{
/* Error occurred while sector erase.
User can add here some code to deal with this error */
Err = ERROR;
}
FLASH_Lock();
return Err;
}
static bool restoreCalibrateParamToFlash ( CalibrateParam* p )
{
int i ;
int n = sizeof(*p) / sizeof(uint32_t) ;
uint32_t Address = CALIBRATE_PARAM_ADDR ;
uint32_t *d = (uint32_t *) p ;
FLASH_Unlock();
FLASH_EraseSector(FLASH_Sector_5,VoltageRange_3);
for ( i=0;i<n;i++){
FLASH_ProgramWord( Address, *d );
d ++ ;
Address += 4;
}
FLASH_Lock();
// 检验是否正确写入
bool ret = true ;
d = (uint32_t *) p ;
uint32_t *d2 = (uint32_t*)CALIBRATE_PARAM_ADDR ;
for ( i=0; i<n; i++ )
{
if ( d[i] != d2[i] )
{
ret = false ;
break ;
}
}
return ret ;
}
bool write(uint32_t addr, uint16_t * data, const uint16_t data_len)
{
int sector;
/* Check bounds */
if ((addr >= (SECTOR11_START_ADDR + SECTOR_SIZE_128KB)) ||
(addr < SECTOR0_START_ADDR))
return false;
/* Need to compute sector to erase */
if (addr >= SECTOR5_START_ADDR)
sector = 5 + ((addr - SECTOR5_START_ADDR)/SECTOR_SIZE_128KB);
else if (addr >= SECTOR4_START_ADDR)
sector = 4;
else
sector = (addr - SECTOR0_START_ADDR)/SECTOR_SIZE_16KB;
/* Unlock flash */
FLASH_Unlock();
FLASH_EraseSector(sector * 0x08, VoltageRange_3);
/* Write data */
for (int i = 0; i < data_len; i += 2)
{
FLASH_ProgramHalfWord(addr, *data);
data++; addr += 2;
}
return true;
}
int stm32_flash_erase(uint32_t offset, uint16_t len)
{
uint32_t StartSector, EndSector;
uint32_t flash_user_start_addr, flash_user_end_addr;
uint32_t addr;
uint8_t i;
/* Get the number of the start and end sectors */
flash_user_start_addr = ADDR_FLASH_SECTOR_0 + offset;
flash_user_end_addr = flash_user_start_addr + len;
StartSector = GetSector(flash_user_start_addr);
EndSector = GetSector(flash_user_end_addr);
/* Erase sector */
for (i = StartSector; i <= EndSector; i += 8) {
/* Device voltage range supposed to be [2.7V to 3.6V], the operation will
be done by word */
if (FLASH_EraseSector(i, VoltageRange_3) != FLASH_COMPLETE) {
return -1;
}
}
return 0;
}
/**
* @brief ½«²ÎÊýдÈëFLASHÖÐ
*
* @param b:ÊÇ·ñÓÐLEDÌáʾ
* @retval none
*/
void Flash_WriteParams(uint8_t b)
{
FLASH_Status status;
uint32_t i;
FLASH_Unlock();
FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_PGPERR | FLASH_FLAG_WRPERR);
// //if (FLASH_ErasePage(FLASH_WRITE_ADDR) == FLASH_COMPLETE)
if(FLASH_EraseSector(FLASH_WRITE_SECTOR, VoltageRange_3) == FLASH_COMPLETE)
{
for (i = 0; i < sizeof(config_t); i += 4)
{
status = FLASH_ProgramWord(FLASH_WRITE_ADDR + i, *(uint32_t *) ((char *) &cfg + i));
if (status != FLASH_COMPLETE)
{
System_FailureMode(1);
break; // TODO: fail
}
}
}
else
System_FailureMode(1);
FLASH_Lock();
Flash_Read();
}
const DC3Error_t FLASH_eraseSector( const uint32_t sectorAddr )
{
DC3Error_t status = ERR_NONE;
/* These flags have to be cleared before any operation can be done on the
* flash memory */
// DBG_printf("Clearing flash flags. Status before clear: %x\n",FLASH->SR );
FLASH_ClearFlag(
FLASH_FLAG_PGSERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGAERR |
FLASH_FLAG_WRPERR | FLASH_FLAG_OPERR | FLASH_FLAG_EOP
);
// DBG_printf("Status after clear: %x\n",FLASH->SR );
WRN_printf("*** Erasing Flash sector addr 0x%08x ***\n", sectorAddr);
/*Look up the STM32 value of the sector given the sector address */
uint16_t sector = FLASH_sectorAddrToFlashSect( sectorAddr );
DBG_printf("Erasing sector (0x%04x) with base addr: 0x%08x...\n",
sector, sectorAddr);
/* This is a blocking operation but it's only for a single sector so should
* not take that long */
FLASH_Status flash_status = FLASH_EraseSector(sector, VoltageRange_3);
status = FLASH_statusToErrorCode( flash_status );
if (ERR_NONE != status) {
ERR_printf("Flash error %d ( error 0x%08x) while erasing sector "
"0x%04x (base addr: 0x%08x)\n",
flash_status, status, sector, sectorAddr);
DBG_printf("FLASH SR:%lx\n", FLASH->SR);
}
return( status );
}
uint16_t flash_helper_erase_new_app(uint32_t new_app_size) {
FLASH_Unlock();
FLASH_ClearFlag(FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR |
FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
new_app_size += flash_addr[NEW_APP_BASE];
mcpwm_unlock();
mcpwm_release_motor();
utils_sys_lock_cnt();
RCC_APB1PeriphClockCmd(RCC_APB1Periph_WWDG, DISABLE);
for (int i = 0;i < NEW_APP_SECTORS;i++) {
if (new_app_size > flash_addr[NEW_APP_BASE + i]) {
uint16_t res = FLASH_EraseSector(flash_sector[NEW_APP_BASE + i], VoltageRange_3);
if (res != FLASH_COMPLETE) {
return res;
}
} else {
break;
}
}
RCC_APB1PeriphClockCmd(RCC_APB1Periph_WWDG, ENABLE);
utils_sys_unlock_cnt();
return FLASH_COMPLETE;
}
bool flash_write_word(uint32_t add, uint32_t value)
{
/* Unlock the Flash to enable the flash control register access *************/
FLASH_Unlock();
/* Clear pending flags (if any) */
FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
if (FLASH_EraseSector(FLASH_Sector_11, VoltageRange_4) != FLASH_COMPLETE)
{
goto fop_error;
}
//Program the user Flash area word by word
if (FLASH_ProgramWord(add, value) != FLASH_COMPLETE)
{
goto fop_error;
}
FLASH_Lock();
return true;
fop_error:
FLASH_Lock();
return false;
}
/*******************************************************************************
* Function Name : FLASH_If_Erase
* Description : Erase sector
* Input : None
* Output : None
* Return : None
*******************************************************************************/
uint16_t FLASH_If_Erase(uint32_t Add)
{
/* Unlock the internal flash */
FLASH_Unlock();
FLASH_ClearFlags();
#if defined (STM32F2XX) || defined (STM32F4XX)
/* Disable sector write protection if it's already protected */
uint16_t OB_WRP_Sector = FLASH_SectorToWriteProtect(FLASH_INTERNAL, Add);
FLASH_WriteProtection_Disable(OB_WRP_Sector);
/* Check which sector has to be erased */
uint16_t FLASH_Sector = FLASH_SectorToErase(FLASH_INTERNAL, Add);
FLASH_Status status = FLASH_EraseSector(FLASH_Sector, VoltageRange_3);
#elif defined(STM32F10X_CL)
/* Call the standard Flash erase function */
FLASH_ErasePage(Add);
#endif /* STM32F2XX */
/* Lock the internal flash */
FLASH_Lock();
if (status != FLASH_COMPLETE) return MAL_FAIL;
return MAL_OK;
}
uint16_t flash_helper_erase_new_app(uint32_t new_app_size) {
FLASH_Unlock();
FLASH_ClearFlag(FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR |
FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
new_app_size += flash_addr[NEW_APP_BASE];
mc_interface_unlock();
mc_interface_release_motor();
utils_sys_lock_cnt();
timeout_configure_IWDT_slowest();
for (int i = 0;i < NEW_APP_SECTORS;i++) {
if (new_app_size > flash_addr[NEW_APP_BASE + i]) {
uint16_t res = FLASH_EraseSector(flash_sector[NEW_APP_BASE + i], VoltageRange_3);
if (res != FLASH_COMPLETE) {
FLASH_Lock();
return res;
}
} else {
break;
}
}
FLASH_Lock();
timeout_configure_IWDT();
utils_sys_unlock_cnt();
return FLASH_COMPLETE;
}
void writeFlash(u8 address_num,u32 data) //address_num should start from 0 up to 255
{
const u8 data_count=255;
u32 flash_data[data_count];
for (u8 i = 0; i < data_count; ++i) {
flash_data[i] = readFlash(i);
}
flash_data[address_num] = data;
FLASH_Unlock();// you need to unlcok flash first
/* Clear All pending flags */
FLASH_ClearFlag( FLASH_FLAG_EOP | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
//you need to erase entire sector before write anything
FLASH_EraseSector(FLASH_Sector_11, VoltageRange_3);
//VoltageRange_3 ((uint8_t)0x02) /*!<Device operating range: 2.7V to 3.6V */
for (u8 i = 0; i < data_count; ++i) { //write back the whole sector memory
FLASH_ProgramWord((u32)(startAddress + i * 4), flash_data[i]);
}
FLASH_Lock();//lock flash at the end
}
OSStatus internalFlashErase(uint32_t StartAddress, uint32_t EndAddress)
{
platform_log_trace();
OSStatus err = kNoErr;
uint32_t StartSector, EndSector, i = 0, j = 0;
/* Get the sector where start the user flash area */
StartSector = _GetSector(StartAddress);
EndSector = _GetSector(EndAddress);
for(i = StartSector; i <= EndSector; i += 8)
{
/* Device voltage range supposed to be [2.7V to 3.6V], the operation will
be done by word */
_GetAddress(i, &StartAddress, &EndAddress);
for(j=StartAddress; j<=EndAddress; j+=8){
if( (*(uint32_t *)(j))!=0xFFFFFFFF )
break;
}
if( j>EndAddress )
continue;
require_action(FLASH_EraseSector(i, VoltageRange_3) == FLASH_COMPLETE, exit, err = kWriteErr);
}
exit:
return err;
}
int flash_erase(const uint32_t addr, const int32_t len)
{
int start_sector, end_sector;
/* Check bounds */
if (addr < SECTOR0_START_ADDR)
return -1;
/* Need to compute sector to erase */
start_sector = get_sector_num(addr);
if (len == -1)
end_sector = 11;
else
end_sector = get_sector_num(addr+(len*BYTES_PER_WORD)-1);
FLASH_Unlock();
for (int i = start_sector; i <= end_sector; ++i)
{
FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
FLASH_EraseSector(i * 0x08, VoltageRange_3);
}
FLASH_Lock();
return 0;
}
//void SD_TEST(void)
//{
// u8 res;
// UINT bw,index;
// res=f_mount( &fatfs_SDCARD,"0:/",1 );
// res=f_open(&file_sdif, "0:/sdif.dat",FA_OPEN_EXISTING|FA_WRITE|FA_READ);
// res=f_write(&file_sdif,SDTEST_WriteBuffer,512,&bw);
// res=f_close(&file_sdif);
// res=f_open(&file_sdif, "0:/sdif.dat",FA_OPEN_EXISTING |FA_WRITE);
// res=f_write(&file_sdif,SDTEST_WriteBuffer,512,&bw);
// res=f_close(&file_sdif);
// res=f_open(&file_sdif, "0:/sdif.dat",FA_OPEN_EXISTING | FA_READ);
// index=0;
// while(SDTEST_ReadBuffer[31]!=0x04)
// {
// index++;
// res=f_read(&file_sdif,SDTEST_ReadBuffer,512,&bw);
// }
// f_close(&file_sdif);
//
//
//}
u8 bsp_ChangeAPPtoRun(u8 App_Select)
{
u8 status=0;
u8 Flash_status=0;
FLASH_Unlock(); //解锁
FLASH_DataCacheCmd(DISABLE);//FLASH擦除期间,必须禁止数据缓存
FLASH_ClearFlag(FLASH_FLAG_EOP|FLASH_FLAG_OPERR|FLASH_FLAG_WRPERR| FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
status=FLASH_EraseSector(FLASH_Sector_3 ,VoltageRange_3);//VCC=2.7~3.6V之间!!
if(status==FLASH_COMPLETE)
{
__set_PRIMASK(1);
status=FLASH_ProgramByte(App_ToRun_Flag,App_Select); //SysID
__set_PRIMASK(0);
}
FLASH_DataCacheCmd(ENABLE); //FLASH擦除结束,开启数据缓存
FLASH_Lock();//上锁
if(status==FLASH_COMPLETE)
{
Flash_status=0;
}
else
{
Flash_status=status;
}
return Flash_status;
}
uint16_t EE_WriteBuf(uint16_t EEAddress, uint16_t* _data, uint16_t len)
{
uint16_t * rData, * fData;
uint32_t adr;
uint32_t ret;
uint32_t i;
volatile FLASH_Status FLASHStatus = FLASH_COMPLETE;
ret = 0;
// check data
rData = (uint16_t *)_data;
fData = (uint16_t *)(EEAddress + EEPROM_START_ADDRESS);
adr = EEAddress + EEPROM_START_ADDRESS;
for (i = 0; i < len; i++)
{
if (rData[i] != fData[i] )
{
ret = 1;
if (fData[i] != 0xFFFF)
{
ret = 2;
i = len;
}
}
}
if (ret)
{
FLASH_Unlock();
FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
// Clear Page
if (ret == 2)
FLASHStatus = FLASH_EraseSector(PAGE0_ID, VOLTAGE_RANGE);
ret = 0;
if (FLASHStatus == FLASH_COMPLETE)
{
for (i = 0; i < len; i++)
{
FLASHStatus = FLASH_ProgramHalfWord(adr, rData[i]);
adr += 2;
}
// check flash write
rData = (uint16_t *)_data;
fData = (uint16_t *)(EEAddress + EEPROM_START_ADDRESS);
for (i = 0; i < len; i++)
{
if (rData[i] != fData[i] ) ret = 1;
}
}
else
{
ret = 2;
}
FLASH_Lock();
}
return ret;
}
void bsp_SysinfoSave(void)
{
u8 status=0;
u16 index=0;
SleepTime=0;
memcpy(MCU_ROM_Write,(u8*)ADDR_FLASH_SECTOR_7,1024+16); //?????,???????????buffer
memcpy(MCU_ROM_Write+1024,&char_SysID_Length,1);
memcpy(MCU_ROM_Write+1024+1,char_SysID,char_SysID_Length);
memcpy(MCU_ROM_Write+1024+9,&Battery_Threshold,1);
memcpy(MCU_ROM_Write+1024+10,&Key_Sound,1);
FLASH_Unlock(); //??
FLASH_DataCacheCmd(DISABLE);//FLASH????,????????
FLASH_ClearFlag(FLASH_FLAG_EOP|FLASH_FLAG_OPERR|FLASH_FLAG_WRPERR| FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
status=FLASH_EraseSector(FLASH_Sector_7 ,VoltageRange_3);//VCC=2.7~3.6V??!!
if(status==FLASH_COMPLETE)
{
for(index=0;index<(1024+16);index++)
{
status=FLASH_ProgramByte(ADDR_FLASH_SECTOR_7+index,MCU_ROM_Write[index]); //SysID
}
}
FLASH_DataCacheCmd(ENABLE); //FLASH????,??????
FLASH_Lock();//??
if(status==FLASH_COMPLETE)
{
MCU_WriteStatus=0;
}
else
{
MCU_WriteStatus=status;
}
// FLASH_Unlock(); //??
// FLASH_DataCacheCmd(DISABLE);//FLASH????,????????
// FLASH_ClearFlag(FLASH_FLAG_EOP|FLASH_FLAG_OPERR|FLASH_FLAG_WRPERR| FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
// status=FLASH_EraseSector(FLASH_Sector_7 ,VoltageRange_3);//VCC=2.7~3.6V??!!
// if(status==FLASH_COMPLETE)
// {
// status=FLASH_ProgramByte(ADDR_FLASH_SECTOR_7+1024,char_SysID_Length);//????
// for(index=0;index<char_SysID_Length;index++)
// {
// status=FLASH_ProgramByte(ADDR_FLASH_SECTOR_7+1024+index+1,char_SysID[index]); //SysID
// }
// status=FLASH_ProgramByte(ADDR_FLASH_SECTOR_7+1024+9,Battery_Threshold);
// status=FLASH_ProgramByte(ADDR_FLASH_SECTOR_7+1024+10,Key_Sound);
//
// }
// FLASH_DataCacheCmd(ENABLE); //FLASH????,??????
// FLASH_Lock();//??
}
FLASH_Status flash_open_erase_sector(uint32_t address){
uint8_t i;
for (i = 0; i < 12; ++i) {
if (address == kSectorBaseAddress[i]) {
FLASH_EraseSector(i * 8, VoltageRange_3);
}
}
}
//Store the computed offsets to internal FLASH
void store_offsets()
{
union
{
float val;
struct
{
uint8_t bytes[4];
};
}extract_float;
uint32_t ADDRESS = BACKUP_ADDRESS;
uint8_t i,j;
IWDG_ReloadCounter();
FLASH_Unlock(); //unlock FLASH to enable writing
FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR); //clear any pending flags
FLASH_EraseSector(BACKUP_SECTOR,VoltageRange_3); //Erase the sector where data is to be written too
FLASH_ProgramHalfWord(ADDRESS, ASI_ZERO);
ADDRESS+=2;
for(j=0;j<6;j++)
{
extract_float.val = AN_OFFSET[j];
for(i=0;i<4;i++)
{
FLASH_ProgramByte(ADDRESS, extract_float.bytes[i]);
ADDRESS+=1;
}
}
for(i=0;i<3;i++)
{
FLASH_ProgramHalfWord(ADDRESS, MAG_OFFSET[i]);
ADDRESS+=2;
}
for(j=0;j<3;j++)
{
extract_float.val = MAG_SCALE[j];
for(i=0;i<4;i++)
{
FLASH_ProgramByte(ADDRESS, extract_float.bytes[i]);
ADDRESS+=1;
}
}
FLASH_ProgramHalfWord(ADDRESS, ground_alt_offset);
ADDRESS+=2;
for(i=0;i<8;i++)
{
FLASH_ProgramHalfWord(ADDRESS, RC_trim[i]);
ADDRESS+=2;
}
FLASH_Lock();
}
void writeEEPROM(uint8_t b, uint8_t updateProfile)
{
FLASH_Status status;
uint32_t i;
uint8_t chk = 0;
const uint8_t *p;
int tries = 0;
// prepare checksum/version constants
mcfg.version = EEPROM_CONF_VERSION;
mcfg.size = sizeof(master_t);
mcfg.magic_be = 0xBE;
mcfg.magic_ef = 0xEF;
mcfg.chk = 0;
// when updateProfile = true, we copy contents of cfg to global configuration. when false, only profile number is updated, and then that profile is loaded on readEEPROM()
if (updateProfile) {
// copy current in-memory profile to stored configuration
memcpy(&mcfg.profile[mcfg.current_profile], &cfg, sizeof(config_t));
}
// recalculate checksum before writing
for (p = (const uint8_t *)&mcfg; p < ((const uint8_t *)&mcfg + sizeof(master_t)); p++)
chk ^= *p;
mcfg.chk = chk;
// write it
retry:
FLASH_Unlock();
FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
if (FLASH_EraseSector(FLASH_Sector_11, VoltageRange_3) == FLASH_COMPLETE) {
for (i = 0; i < sizeof(master_t); i += 4) {
status = FLASH_ProgramWord(FLASH_WRITE_ADDR + i, *(uint32_t *) ((char *)&mcfg + i));
if (status != FLASH_COMPLETE) {
FLASH_Lock();
tries++;
if (tries < 3)
goto retry;
else
break;
}
}
}
FLASH_Lock();
// Flash write failed - just die now
if (tries == 3 || !validEEPROM()) {
failureMode(10);
}
// re-read written data
readEEPROM();
if (b)
blinkLED(15, 20, 1);
}
static uint32_t flash_erase(uint32_t addr)
{
if(FLASH_EraseSector(addr) == FLASH_OK)
{
return BL_FLASH_OK;
}
else
{
return BL_FLASH_ERR;
}
}
sys_res arch_IntfErase(adr_t nAdr)
{
FLASH_Status res = FLASH_COMPLETE;
stm32_intf_Lock();
res = FLASH_EraseSector(arch_flashGetSector(nAdr), VoltageRange_3);
stm32_intf_Unlock();
if (res == FLASH_COMPLETE)
return SYS_R_OK;
return SYS_R_TMO;
}
/*
* Erase flash page if it is not already erased. This is to save write cycles and
* prevent the memory from getting erased in case of unstable voltage at boot.
*/
static uint16_t EE_EraseSectorIfNotEmpty(uint32_t FLASH_Sector, uint8_t VoltageRange) {
uint8_t *addr = flash_helper_get_sector_address(FLASH_Sector);
for (unsigned int i = 0;i < PAGE_SIZE;i++) {
if (addr[i] != 0xFF) {
return FLASH_EraseSector(FLASH_Sector, VoltageRange);
}
}
return FLASH_COMPLETE;
}
/*=====================================================================================================*/
int8_t Flash_EraseSector( uint32_t eraseSector )
{
int8_t status = ERROR;
FLASH_Unlock();
FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
status = FLASH_EraseSector(eraseSector, VoltageRange_3);
FLASH_Lock();
return status;
}
/*
*********************************************************************************************************
* 函 数 名: bsp_WriteCpuFlash
* 功能说明: 写数据到CPU 内部Flash。
* 形 参: _ulFlashAddr : Flash地址
* _ucpSrc : 数据缓冲区
* _ulSize : 数据大小（单位是字节）
* 返 回 值: 0-成功，1-数据长度或地址溢出，2-写Flash出错(估计Flash寿命到)
*********************************************************************************************************
*/
uint8_t bsp_WriteCpuFlash(uint32_t _ulFlashAddr, uint8_t *_ucpSrc, uint32_t _ulSize)
{
uint32_t i;
uint8_t ucRet;
/* 如果偏移地址超过芯片容量，则不改写输出缓冲区 */
if (_ulFlashAddr + _ulSize > FLASH_BASE_ADDR + FLASH_SIZE)
{
return 1;
}
/* 长度为0时不继续操作 */
if (_ulSize == 0)
{
return 0;
}
ucRet = bsp_CmpCpuFlash(_ulFlashAddr, _ucpSrc, _ulSize);
if (ucRet == FLASH_IS_EQU)
{
return 0;
}
__set_PRIMASK(1); /* 关中断 */
/* FLASH 解锁 */
FLASH_Unlock();
/* Clear pending flags (if any) */
FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
/* 需要擦除 */
if (ucRet == FLASH_REQ_ERASE)
{
FLASH_EraseSector(bsp_GetSector(_ulFlashAddr), VoltageRange_3);
}
/* 按字节模式编程（为提高效率，可以按字编程，一次写入4字节） */
for (i = 0; i < _ulSize; i++)
{
FLASH_ProgramByte(_ulFlashAddr++, *_ucpSrc++);
}
/* Flash 加锁，禁止写Flash控制寄存器 */
FLASH_Lock();
__set_PRIMASK(0); /* 开中断 */
return 0;
}
/*=====================================================================================================*/
void Flash_ErasePage(u32 ErasePage)
{
FLASH_Status FLASHStatus;
FLASH_Unlock();
FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
FLASHStatus = FLASH_EraseSector(ErasePage, VoltageRange_3);
while (FLASHStatus != FLASH_COMPLETE);
FLASH_Lock();
}
FLASH_Status flash_erase_sector(uint32_t address){
uint8_t i;
FLASH_Unlock();
FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
for (i = 0; i < 12; ++i) {
if (address == kSectorBaseAddress[i]) {
FLASH_EraseSector(i * 8, VoltageRange_3);
}
}
FLASH_Lock();
}
