status_code_t nvm_page_erase(mem_type_t mem, uint32_t page_number)
{
switch (mem) {
case INT_FLASH:
if ((page_number >= 0) &&
(page_number <
(BOOT_SECTION_START / FLASH_PAGE_SIZE))) {
nvm_flash_erase_app_page((flash_addr_t)(page_number *
FLASH_PAGE_SIZE));
} else if ((page_number >= 0) &&
(page_number <
(BOOT_SECTION_END / FLASH_PAGE_SIZE))) {
nvm_flash_erase_boot_page((flash_addr_t)(page_number *
FLASH_PAGE_SIZE));
} else {
return ERR_INVALID_ARG;
}
break;
case INT_USERPAGE:
nvm_flash_erase_user_section();
break;
case INT_EEPROM:
nvm_eeprom_erase_page((uint8_t)page_number);
break;
default:
return ERR_INVALID_ARG;
}
return STATUS_OK;
}
/* New function declarations used for the NVM-workaround */
void EraseApplicationPage(uint32_t address)
{
/*Set the correct settings and store critical registers before NVM-workaround*/
#ifdef WORKAROUND
Prepare_to_Sleep();
#endif
/*Assembly "function" to preform page erase*/
nvm_flash_erase_app_page(address);
}
/**
* Test nvm_flash_load_word_to_buffer(), nvm_flash_erase_app_page() and
* nvm_flash_split_write_app_page().
*
* Test procedure:
* - Erase page in application table section.
* - Verify the page is erased by comparing each word in flash.
* - Write page to application table section
* - Verify each byte written correctly by comparing each word in flash
*
* \return STATUS_OK if test succeeded, otherwise ERR_BAD_DATA
*/
static status_code_t test_split_write_app_table(void)
{
flash_addr_t page_addr;
page_addr = APPTABLE_SECTION_START + 3 * FLASH_PAGE_SIZE;
set_buffer(buffer, FLASH_ERASED);
nvm_flash_erase_app_page(page_addr);
if (!is_flash_page_equal_to_buffer(page_addr, buffer)) {
return ERR_BAD_DATA;
}
fill_flash_page_buffer(buffer, 0x317A);
nvm_flash_split_write_app_page(page_addr);
if (!is_flash_page_equal_to_buffer(page_addr, buffer)) {
return ERR_BAD_DATA;
}
return STATUS_OK;
}
