int
MOS3dSetup(GENmodel *inModel, CKTcircuit *ckt)
/* actually load the current value into the
* sparse matrix previously provided
*/
{
MOS3model *model = (MOS3model *)inModel;
MOS3instance *here;
double Beta;
double DrainSatCur;
double EffectiveLength;
double EffectiveWidth;
double GateBulkOverlapCap;
double GateDrainOverlapCap;
double GateSourceOverlapCap;
double OxideCap;
double SourceSatCur;
double arg;
double cdrain;
double evbs;
double sarg;
double sargsw;
double lvgs;
double vbd;
double vbs;
double vds;
double vdsat;
double vgb;
double vgd;
double vgs;
double von;
double lcapgs2,lcapgs3; /* total gate-source capacitance */
double lcapgd2,lcapgd3; /* total gate-drain capacitance */
double lcapgb2,lcapgb3; /* total gate-bulk capacitance */
double lgbs, lgbs2, lgbs3;
double lgbd, lgbd2, lgbd3;
double gm2, gb2, gds2, gmb, gmds, gbds;
double gm3, gb3, gds3, gm2ds, gm2b, gb2ds, gbds2, gmb2, gmds2, gmbds;
double lcapbd, lcapbd2, lcapbd3;
double lcapbs, lcapbs2, lcapbs3;
double ebd;
double vt; /* vt at instance temperature */
Dderivs d_cdrain;
/* loop through all the MOS3 device models */
for( ; model != NULL; model = MOS3nextModel(model)) {
/* loop through all the instances of the model */
for (here = MOS3instances(model); here != NULL ;
here=MOS3nextInstance(here)) {
vt = CONSTKoverQ * here->MOS3temp;
/* first, we compute a few useful values - these could be
* pre-computed, but for historical reasons are still done
* here. They may be moved at the expense of instance size
*/
EffectiveWidth=here->MOS3w-2*model->MOS3widthNarrow+
model->MOS3widthAdjust;
EffectiveLength=here->MOS3l - 2*model->MOS3latDiff+
model->MOS3lengthAdjust;
if( (here->MOS3tSatCurDens == 0) ||
(here->MOS3drainArea == 0) ||
(here->MOS3sourceArea == 0)) {
DrainSatCur = here->MOS3m * here->MOS3tSatCur;
SourceSatCur = here->MOS3m * here->MOS3tSatCur;
} else {
DrainSatCur = here->MOS3tSatCurDens *
here->MOS3m * here->MOS3drainArea;
SourceSatCur = here->MOS3tSatCurDens *
here->MOS3m * here->MOS3sourceArea;
}
GateSourceOverlapCap = model->MOS3gateSourceOverlapCapFactor *
here->MOS3m * EffectiveWidth;
GateDrainOverlapCap = model->MOS3gateDrainOverlapCapFactor *
here->MOS3m * EffectiveWidth;
GateBulkOverlapCap = model->MOS3gateBulkOverlapCapFactor *
here->MOS3m * EffectiveLength;
Beta = here->MOS3tTransconductance * here->MOS3m *
EffectiveWidth/EffectiveLength;
OxideCap = model->MOS3oxideCapFactor * EffectiveLength *
here->MOS3m * EffectiveWidth;
/*
* ok - now to do the start-up operations
*
* we must get values for vbs, vds, and vgs from somewhere
* so we either predict them or recover them from last iteration
* These are the two most common cases - either a prediction
* step or the general iteration step and they
* share some code, so we put them first - others later on
*/
/* general iteration */
vbs = model->MOS3type * (
*(ckt->CKTrhsOld+here->MOS3bNode) -
*(ckt->CKTrhsOld+here->MOS3sNodePrime));
vgs = model->MOS3type * (
*(ckt->CKTrhsOld+here->MOS3gNode) -
*(ckt->CKTrhsOld+here->MOS3sNodePrime));
vds = model->MOS3type * (
*(ckt->CKTrhsOld+here->MOS3dNodePrime) -
*(ckt->CKTrhsOld+here->MOS3sNodePrime));
/* now some common crunching for some more useful quantities */
/*
* now all the preliminaries are over - we can start doing the
* real work
*/
vbd = vbs - vds;
vgd = vgs - vds;
vgb = vgs - vbs;
/* bulk-source and bulk-drain doides
* here we just evaluate the ideal diode current and the
* correspoinding derivative (conductance).
*/
if(vbs <= 0) {
lgbs = SourceSatCur/vt;
lgbs += ckt->CKTgmin;
lgbs2 = lgbs3 = 0;
} else {
evbs = exp(MIN(MAX_EXP_ARG,vbs/vt));
lgbs = SourceSatCur*evbs/vt + ckt->CKTgmin;
lgbs2 = model->MOS3type *0.5 * (lgbs - ckt->CKTgmin)/vt;
lgbs3 = model->MOS3type *lgbs2/(vt*3);
}
if(vbd <= 0) {
lgbd = DrainSatCur/vt;
lgbd += ckt->CKTgmin;
lgbd2 = lgbd3 = 0;
} else {
ebd = exp(MIN(MAX_EXP_ARG,vbd/vt));
lgbd = DrainSatCur*ebd/vt +ckt->CKTgmin;
lgbd2 = model->MOS3type *0.5 * (lgbd - ckt->CKTgmin)/vt;
lgbd3 = model->MOS3type *lgbd2/(vt*3);
}
/* now to determine whether the user was able to correctly
* identify the source and drain of his device
*/
if(vds >= 0) {
/* normal mode */
here->MOS3mode = 1;
} else {
/* inverse mode */
here->MOS3mode = -1;
}
{
/*
* subroutine moseq3(vds,vbs,vgs,gm,gds,gmbs,
* qg,qc,qb,cggb,cgdb,cgsb,cbgb,cbdb,cbsb)
*/
/*
* this routine evaluates the drain current, its derivatives and
* the charges associated with the gate, channel and bulk
* for mosfets based on semi-empirical equations
*/
/*
common /mosarg/ vto,beta,gamma,phi,phib,cox,xnsub,xnfs,xd,xj,xld,
1 xlamda,uo,uexp,vbp,utra,vmax,xneff,xl,xw,vbi,von,vdsat,qspof,
2 beta0,beta1,cdrain,xqco,xqc,fnarrw,fshort,lev
common /status/ omega,time,delta,delold(7),ag(7),vt,xni,egfet,
1 xmu,sfactr,mode,modedc,icalc,initf,method,iord,maxord,noncon,
2 iterno,itemno,nosolv,modac,ipiv,ivmflg,ipostp,iscrch,iofile
common /knstnt/ twopi,xlog2,xlog10,root2,rad,boltz,charge,ctok,
1 gmin,reltol,abstol,vntol,trtol,chgtol,eps0,epssil,epsox,
2 pivtol,pivrel
*/
/* equivalence (xlamda,alpha),(vbp,theta),(uexp,eta),(utra,xkappa)*/
double coeff0 = 0.0631353e0;
double coeff1 = 0.8013292e0;
double coeff2 = -0.01110777e0;
double oneoverxl; /* 1/effective length */
double eta; /* eta from model after length factor */
double phibs; /* phi - vbs */
double sqphbs; /* square root of phibs */
double sqphis; /* square root of phi */
double wps;
double oneoverxj; /* 1/junction depth */
double xjonxl; /* junction depth/effective length */
double djonxj;
double wponxj;
double arga;
double argb;
double argc;
double gammas;
double fbodys;
double fbody;
double onfbdy;
double qbonco;
double vbix;
double wconxj;
double vth;
double csonco;
double cdonco;
double vgsx;
double onfg;
double fgate;
double us;
double xn = 0.0;
double vdsc;
double onvdsc = 0.0;
double vdsx;
double cdnorm;
double cdo;
double fdrain = 0.0;
double gdsat;
double cdsat;
double emax;
double delxl;
double dlonxl;
double xlfact;
double ondvt;
double onxn;
double wfact;
double fshort;
double lvds, lvbs, lvbd;
Dderivs d_onxn, d_ondvt, d_wfact, d_MOS3gds;
Dderivs d_emax, d_delxl, d_dlonxl, d_xlfact;
Dderivs d_cdonco, d_fdrain, d_cdsat, d_gdsat;
Dderivs d_vdsx, d_cdo, d_cdnorm, d_Beta, d_dummy;
Dderivs d_vdsc, d_onvdsc, d_arga, d_argb;
Dderivs d_onfg, d_fgate, d_us, d_vgsx;
Dderivs d_von, d_xn, d_vth, d_onfbdy, d_qbonco, d_vbix;
Dderivs d_argc, d_fshort, d_gammas, d_fbodys, d_fbody;
Dderivs d_wps, d_wconxj, d_wponxj;
Dderivs d_phibs, d_sqphbs;
Dderivs d_p, d_q, d_r, d_zero, d_vdsat;
/*
* bypasses the computation of charges
*/
if (here->MOS3mode == 1) {
lvgs = vgs;
lvds = vds;
lvbs = vbs;
lvbd = vbd;
} else {
lvgs = vgd;
lvds = -vds;
lvbs = vbd;
lvbd = vbs;
}
/*
* reference cdrain equations to source and
* charge equations to bulk
*/
d_p.value = 0.0;
d_p.d1_p = 1.0;
d_p.d1_q = 0.0;
d_p.d1_r = 0.0;
d_p.d2_p2 = 0.0;
d_p.d2_q2 = 0.0;
d_p.d2_r2 = 0.0;
d_p.d2_pq = 0.0;
d_p.d2_qr = 0.0;
d_p.d2_pr = 0.0;
d_p.d3_p3 = 0.0;
d_p.d3_q3 = 0.0;
d_p.d3_r3 = 0.0;
d_p.d3_p2r = 0.0;
d_p.d3_p2q = 0.0;
d_p.d3_q2r = 0.0;
d_p.d3_pq2 = 0.0;
d_p.d3_pr2 = 0.0;
d_p.d3_qr2 = 0.0;
d_p.d3_pqr = 0.0;
EqualDeriv(&d_q,&d_p);
EqualDeriv(&d_r,&d_p);
EqualDeriv(&d_zero,&d_p);
d_q.d1_p = d_r.d1_p = d_zero.d1_p = 0.0;
d_q.d1_q = d_r.d1_r = 1.0;
vdsat = 0.0;
EqualDeriv(&d_vdsat,&d_zero);
oneoverxl = 1.0/EffectiveLength;/*const*/
eta = model->MOS3eta * 8.15e-22/(model->MOS3oxideCapFactor*
EffectiveLength*EffectiveLength*EffectiveLength);/*const*/
/*
*.....square root term
*/
if ( lvbs <= 0.0 ) {
phibs = here->MOS3tPhi-lvbs;
EqualDeriv(&d_phibs,&d_q);
d_phibs.value = lvbs;
TimesDeriv(&d_phibs,&d_phibs,-1.0);
d_phibs.value += here->MOS3tPhi;
sqphbs = sqrt(phibs);
SqrtDeriv(&d_sqphbs,&d_phibs);
} else {
sqphis = sqrt(here->MOS3tPhi);/*const*/
/*sqphs3 = here->MOS3tPhi*sqphis;const*/
sqphbs = sqphis/(1.0+lvbs/
(here->MOS3tPhi+here->MOS3tPhi));
EqualDeriv(&d_sqphbs,&d_q); d_sqphbs.value = lvbs;
TimesDeriv(&d_sqphbs,&d_sqphbs,1/(here->MOS3tPhi+here->MOS3tPhi));
d_sqphbs.value += 1.0;
InvDeriv(&d_sqphbs,&d_sqphbs);
TimesDeriv(&d_sqphbs,&d_sqphbs,sqphis);
phibs = sqphbs*sqphbs;
MultDeriv(&d_phibs,&d_sqphbs,&d_sqphbs);
}
/*
*.....short channel effect factor
*/
if ( (model->MOS3junctionDepth != 0.0) &&
(model->MOS3coeffDepLayWidth != 0.0) ) {
wps = model->MOS3coeffDepLayWidth*sqphbs;
TimesDeriv(&d_wps,&d_sqphbs,model->MOS3coeffDepLayWidth);
oneoverxj = 1.0/model->MOS3junctionDepth;/*const*/
xjonxl = model->MOS3junctionDepth*oneoverxl;/*const*/
djonxj = model->MOS3latDiff*oneoverxj;/*const*/
wponxj = wps*oneoverxj;
TimesDeriv(&d_wponxj,&d_wps,oneoverxj);
wconxj = coeff0+coeff1*wponxj+coeff2*wponxj*wponxj;
TimesDeriv(&d_wconxj,&d_wponxj,coeff2);
d_wconxj.value += coeff1;
MultDeriv(&d_wconxj,&d_wconxj,&d_wponxj);
d_wconxj.value += coeff0;
arga = wconxj + djonxj;
EqualDeriv(&d_arga,&d_wconxj); d_arga.value += djonxj;
argc = wponxj/(1.0+wponxj);
EqualDeriv(&d_argc,&d_wponxj);
d_argc.value += 1.0;
InvDeriv(&d_argc,&d_argc);
MultDeriv(&d_argc,&d_argc,&d_wponxj);
argb = sqrt(1.0-argc*argc);
MultDeriv(&d_argb,&d_argc,&d_argc);
TimesDeriv(&d_argb,&d_argb,-1.0);
d_argb.value += 1.0;
SqrtDeriv(&d_argb,&d_argb);
fshort = 1.0-xjonxl*(arga*argb-djonxj);
MultDeriv(&d_fshort,&d_arga,&d_argb);
d_fshort.value -= djonxj;
TimesDeriv(&d_fshort,&d_fshort,-xjonxl);
d_fshort.value += 1.0;
} else {
fshort = 1.0;
EqualDeriv(&d_fshort,&d_zero);
d_fshort.value = 1.0;
}
/*
*.....body effect
*/
gammas = model->MOS3gamma*fshort;
TimesDeriv(&d_gammas,&d_fshort,model->MOS3gamma);
fbodys = 0.5*gammas/(sqphbs+sqphbs);
DivDeriv(&d_fbodys,&d_gammas,&d_sqphbs);
TimesDeriv(&d_fbodys,&d_fbodys,0.25);
fbody = fbodys+model->MOS3narrowFactor/EffectiveWidth;
EqualDeriv(&d_fbody,&d_fbodys);
d_fbody.value += fbody - fbodys;
onfbdy = 1.0/(1.0+fbody);
EqualDeriv(&d_onfbdy,&d_fbody);
d_onfbdy.value += 1.0;
InvDeriv(&d_onfbdy,&d_onfbdy);
qbonco =gammas*sqphbs+model->MOS3narrowFactor*phibs/EffectiveWidth;
EqualDeriv(&d_dummy,&d_phibs);
TimesDeriv(&d_dummy,&d_dummy,model->MOS3narrowFactor*EffectiveWidth);
MultDeriv(&d_qbonco,&d_gammas,&d_sqphbs);
PlusDeriv(&d_qbonco,&d_qbonco,&d_dummy);
/*
*.....static feedback effect
*/
vbix = here->MOS3tVbi*model->MOS3type-eta*(lvds);
EqualDeriv(&d_vbix,&d_r); d_vbix.value = vbix;
d_vbix.d1_r = -eta;
/*
*.....threshold voltage
*/
vth = vbix+qbonco;
PlusDeriv(&d_vth,&d_vbix,&d_qbonco);
/*
*.....joint weak inversion and strong inversion
*/
von = vth;
EqualDeriv(&d_von,&d_vth);
if ( model->MOS3fastSurfaceStateDensity != 0.0 ) {
csonco = CHARGE*model->MOS3fastSurfaceStateDensity *
1e4 /*(cm**2/m**2)*/ *EffectiveLength*EffectiveWidth *
here->MOS3m/OxideCap; /*const*/
cdonco = 0.5*qbonco/phibs;
DivDeriv(&d_cdonco,&d_qbonco,&d_phibs);
TimesDeriv(&d_cdonco,&d_cdonco,0.5);
xn = 1.0+csonco+cdonco;
EqualDeriv(&d_xn,&d_cdonco);
d_xn.value += 1.0 + csonco;
von = vth+vt*xn;
TimesDeriv(&d_von,&d_xn,vt);
PlusDeriv(&d_von,&d_von,&d_vth);
} else {
/*
*.....cutoff region
*/
if ( lvgs <= von ) {
cdrain = 0.0;
EqualDeriv(&d_cdrain,&d_zero);
goto innerline1000;
}
}
/*
*.....device is on
*/
vgsx = MAX(lvgs,von);
if (lvgs >= von) {
EqualDeriv(&d_vgsx,&d_p);
d_vgsx.value = lvgs;
} else {
EqualDeriv(&d_vgsx,&d_von);
}
/*
*.....mobility modulation by gate voltage
*/
onfg = 1.0+model->MOS3theta*(vgsx-vth);
TimesDeriv(&d_onfg,&d_vth,-1.0);
PlusDeriv(&d_onfg,&d_onfg,&d_vgsx);
TimesDeriv(&d_onfg,&d_onfg,model->MOS3theta);
d_onfg.value += 1.0;
fgate = 1.0/onfg;
InvDeriv(&d_fgate,&d_onfg);
us = here->MOS3tSurfMob * 1e-4 /*(m**2/cm**2)*/ *fgate;
TimesDeriv(&d_us,&d_fgate,here->MOS3tSurfMob * 1e-4);
/*
*.....saturation voltage
*/
vdsat = (vgsx-vth)*onfbdy;
TimesDeriv(&d_vdsat,&d_vth, -1.0);
PlusDeriv(&d_vdsat,&d_vdsat,&d_vgsx);
MultDeriv(&d_vdsat,&d_vdsat,&d_onfbdy);
if ( model->MOS3maxDriftVel <= 0.0 ) {
} else {
vdsc = EffectiveLength*model->MOS3maxDriftVel/us;
InvDeriv(&d_vdsc,&d_us);
TimesDeriv(&d_vdsc,&d_vdsc,EffectiveLength*model->MOS3maxDriftVel);
onvdsc = 1.0/vdsc;
InvDeriv(&d_onvdsc,&d_vdsc);
arga = (vgsx-vth)*onfbdy;
/* note arga = vdsat at this point */
EqualDeriv(&d_arga,&d_vdsat);
argb = sqrt(arga*arga+vdsc*vdsc);
MultDeriv(&d_dummy,&d_arga,&d_arga);
MultDeriv(&d_argb,&d_vdsc,&d_vdsc);
PlusDeriv(&d_argb,&d_argb,&d_dummy);
SqrtDeriv(&d_argb,&d_argb);
vdsat = arga+vdsc-argb;
TimesDeriv(&d_vdsat,&d_argb,-1.0);
PlusDeriv(&d_vdsat,&d_vdsat,&d_vdsc);
PlusDeriv(&d_vdsat,&d_vdsat,&d_arga);
}
/*
*.....current factors in linear region
*/
vdsx = MIN((lvds),vdsat);
if (lvds < vdsat) {
EqualDeriv(&d_vdsx,&d_r);
d_vdsx.value = lvds;
} else {
EqualDeriv(&d_vdsx,&d_vdsat);
}
if ( vdsx == 0.0 ) goto line900;
cdo = vgsx-vth-0.5*(1.0+fbody)*vdsx;
EqualDeriv(&d_cdo,&d_fbody);
d_cdo.value += 1.0;
MultDeriv(&d_cdo,&d_cdo,&d_vdsx);
TimesDeriv(&d_cdo,&d_cdo,0.5);
PlusDeriv(&d_cdo,&d_cdo,&d_vth);
TimesDeriv(&d_cdo,&d_cdo,-1.0);
PlusDeriv(&d_cdo,&d_cdo,&d_vgsx);
/*
*.....normalized drain current
*/
cdnorm = cdo*vdsx;
MultDeriv(&d_cdnorm,&d_cdo,&d_vdsx);
/*
*.....drain current without velocity saturation effect
*/
/* Beta is a constant till now */
Beta = Beta*fgate;
TimesDeriv(&d_Beta,&d_fgate,Beta);
cdrain = Beta*cdnorm;
MultDeriv(&d_cdrain,&d_Beta,&d_cdnorm);
/*
*.....velocity saturation factor
*/
if ( model->MOS3maxDriftVel != 0.0 ) {
fdrain = 1.0/(1.0+vdsx*onvdsc);
MultDeriv(&d_fdrain,&d_vdsx,&d_onvdsc);
d_fdrain.value += 1.0;
InvDeriv(&d_fdrain,&d_fdrain);
/*
*.....drain current
*/
cdrain = fdrain*cdrain;
MultDeriv(&d_cdrain,&d_cdrain,&d_fdrain);
Beta = Beta*fdrain;
MultDeriv(&d_Beta,&d_Beta,&d_fdrain);
}
/*
*.....channel length modulation
*/
if ( (lvds) <= vdsat ) goto line700;
if ( model->MOS3maxDriftVel == 0.0 ) goto line510;
if (model->MOS3alpha == 0.0) goto line700;
cdsat = cdrain;
EqualDeriv(&d_cdsat,&d_cdrain);
gdsat = cdsat*(1.0-fdrain)*onvdsc;
TimesDeriv(&d_dummy,&d_fdrain,-1.0);
d_dummy.value += 1.0;
MultDeriv(&d_gdsat,&d_cdsat,&d_dummy);
MultDeriv(&d_gdsat,&d_gdsat,&d_onvdsc);
gdsat = MAX(1.0e-12,gdsat);
if (gdsat == 1.0e-12) {
EqualDeriv(&d_gdsat,&d_zero);
d_gdsat.value = gdsat;
}
emax = cdsat*oneoverxl/gdsat;
DivDeriv(&d_emax,&d_cdsat,&d_gdsat);
TimesDeriv(&d_emax,&d_emax,oneoverxl);
arga = 0.5*emax*model->MOS3alpha;
TimesDeriv(&d_arga,&d_emax,0.5*model->MOS3alpha);
argc = model->MOS3kappa*model->MOS3alpha;/*const*/
argb = sqrt(arga*arga+argc*((lvds)-vdsat));
TimesDeriv(&d_dummy,&d_vdsat,-1.0);
d_dummy.value += lvds;
d_dummy.d1_r += 1.0;
TimesDeriv(&d_argb,&d_dummy,argc);
MultDeriv(&d_dummy,&d_arga,&d_arga);
PlusDeriv(&d_argb,&d_argb,&d_dummy);
SqrtDeriv(&d_argb,&d_argb);
delxl = argb-arga;
TimesDeriv(&d_delxl,&d_arga,-1.0);
PlusDeriv(&d_delxl,&d_argb,&d_delxl);
goto line520;
line510:
delxl = sqrt(model->MOS3kappa*((lvds)-vdsat)*model->MOS3alpha);
TimesDeriv(&d_delxl,&d_vdsat,-1.0);
d_delxl.value += lvds;
d_delxl.d1_r += 1.0;
TimesDeriv(&d_delxl,&d_delxl,model->MOS3kappa*model->MOS3alpha);
SqrtDeriv(&d_delxl,&d_delxl);
/*
*.....punch through approximation
*/
line520:
if ( delxl > (0.5*EffectiveLength) ) {
delxl = EffectiveLength - (EffectiveLength*EffectiveLength/
delxl*0.25);
InvDeriv(&d_delxl,&d_delxl);
TimesDeriv(&d_delxl,&d_delxl,-EffectiveLength*EffectiveLength*0.25);
d_delxl.value += EffectiveLength;
}
/*
*.....saturation region
*/
dlonxl = delxl*oneoverxl;
TimesDeriv(&d_dlonxl,&d_delxl,oneoverxl);
xlfact = 1.0/(1.0-dlonxl);
TimesDeriv(&d_xlfact,&d_dlonxl,-1.0);
d_xlfact.value += 1.0;
InvDeriv(&d_xlfact,&d_xlfact);
cdrain = cdrain*xlfact;
MultDeriv(&d_cdrain,&d_cdrain,&d_xlfact);
/*
*.....finish strong inversion case
*/
line700:
if ( lvgs < von ) {
/*
*.....weak inversion
*/
onxn = 1.0/xn;
InvDeriv(&d_onxn,&d_xn);
ondvt = onxn/vt;
TimesDeriv(&d_ondvt,&d_onxn,1/vt);
wfact = exp( (lvgs-von)*ondvt );
TimesDeriv(&d_wfact,&d_von,-1.0);
d_wfact.value += lvgs;
d_wfact.d1_p += 1.0;
MultDeriv(&d_wfact,&d_wfact,&d_ondvt);
ExpDeriv(&d_wfact,&d_wfact);
cdrain = cdrain*wfact;
MultDeriv(&d_cdrain,&d_cdrain,&d_wfact);
}
/*
*.....charge computation
*/
goto innerline1000;
/*
*.....special case of vds = 0.0d0
*/
line900:
Beta = Beta*fgate;
/* Beta is still a constant */
TimesDeriv(&d_Beta,&d_fgate,Beta);
cdrain = 0.0;
EqualDeriv(&d_cdrain,&d_zero);
here->MOS3gds = Beta*(vgsx-vth);
TimesDeriv(&d_MOS3gds,&d_vth,-1.0);
PlusDeriv(&d_MOS3gds,&d_MOS3gds,&d_vgsx);
MultDeriv(&d_MOS3gds,&d_MOS3gds,&d_Beta);
if ( (model->MOS3fastSurfaceStateDensity != 0.0) &&
(lvgs < von) ) {
here->MOS3gds *=exp((lvgs-von)/(vt*xn));
TimesDeriv(&d_dummy,&d_von,-1.0);
d_dummy.value += lvgs;
d_dummy.d1_p += 1.0;
DivDeriv(&d_dummy,&d_dummy,&d_xn);
TimesDeriv(&d_dummy,&d_dummy,1/vt);
ExpDeriv(&d_dummy,&d_dummy);
MultDeriv(&d_MOS3gds,&d_MOS3gds,&d_dummy);
}
d_cdrain.d1_r = d_MOS3gds.value;
d_cdrain.d2_r2 = d_MOS3gds.d1_r;
d_cdrain.d3_r3 = d_MOS3gds.d2_r2;
innerline1000:;
/*
*.....done
*/
}
/*
* COMPUTE EQUIVALENT DRAIN CURRENT SOURCE
*/
/*
* now we do the hard part of the bulk-drain and bulk-source
* diode - we evaluate the non-linear capacitance and
* charge
*
* the basic equations are not hard, but the implementation
* is somewhat long in an attempt to avoid log/exponential
* evaluations
*/
/*
* charge storage elements
*
*.. bulk-drain and bulk-source depletion capacitances
*/
if (vbs < here->MOS3tDepCap){
arg=1-vbs/here->MOS3tBulkPot;
/*
* the following block looks somewhat long and messy,
* but since most users use the default grading
* coefficients of .5, and sqrt is MUCH faster than an
* exp(log()) we use this special case code to buy time.
* (as much as 10% of total job time!)
*/
if(model->MOS3bulkJctBotGradingCoeff ==
model->MOS3bulkJctSideGradingCoeff) {
if(model->MOS3bulkJctBotGradingCoeff == .5) {
sarg = sargsw = 1/sqrt(arg);
} else {
sarg = sargsw =
exp(-model->MOS3bulkJctBotGradingCoeff*
log(arg));
}
} else {
if(model->MOS3bulkJctBotGradingCoeff == .5) {
sarg = 1/sqrt(arg);
} else {
sarg = exp(-model->MOS3bulkJctBotGradingCoeff*
log(arg));
}
if(model->MOS3bulkJctSideGradingCoeff == .5) {
sargsw = 1/sqrt(arg);
} else {
sargsw =exp(-model->MOS3bulkJctSideGradingCoeff*
log(arg));
}
}
lcapbs=here->MOS3Cbs*sarg+
here->MOS3Cbssw*sargsw;
lcapbs2 = model->MOS3type*0.5/here->MOS3tBulkPot*(
here->MOS3Cbs*model->MOS3bulkJctBotGradingCoeff*
sarg/arg + here->MOS3Cbssw*
model->MOS3bulkJctSideGradingCoeff*sargsw/arg);
lcapbs3 = here->MOS3Cbs*sarg*
model->MOS3bulkJctBotGradingCoeff*
(model->MOS3bulkJctBotGradingCoeff+1);
lcapbs3 += here->MOS3Cbssw*sargsw*
model->MOS3bulkJctSideGradingCoeff*
(model->MOS3bulkJctSideGradingCoeff+1);
lcapbs3 = lcapbs3/(6*here->MOS3tBulkPot*
here->MOS3tBulkPot*arg*arg);
} else {
/* *(ckt->CKTstate0 + here->MOS3qbs)= here->MOS3f4s +
vbs*(here->MOS3f2s+vbs*(here->MOS3f3s/2));*/
lcapbs=here->MOS3f2s+here->MOS3f3s*vbs;
lcapbs2 = 0.5*here->MOS3f3s;
lcapbs3 = 0;
}
if (vbd < here->MOS3tDepCap) {
arg=1-vbd/here->MOS3tBulkPot;
/*
* the following block looks somewhat long and messy,
* but since most users use the default grading
* coefficients of .5, and sqrt is MUCH faster than an
* exp(log()) we use this special case code to buy time.
* (as much as 10% of total job time!)
*/
if(model->MOS3bulkJctBotGradingCoeff == .5 &&
model->MOS3bulkJctSideGradingCoeff == .5) {
sarg = sargsw = 1/sqrt(arg);
} else {
if(model->MOS3bulkJctBotGradingCoeff == .5) {
sarg = 1/sqrt(arg);
} else {
sarg = exp(-model->MOS3bulkJctBotGradingCoeff*
log(arg));
}
if(model->MOS3bulkJctSideGradingCoeff == .5) {
sargsw = 1/sqrt(arg);
} else {
sargsw =exp(-model->MOS3bulkJctSideGradingCoeff*
log(arg));
}
}
lcapbd=here->MOS3Cbd*sarg+
here->MOS3Cbdsw*sargsw;
lcapbd2 = model->MOS3type*0.5/here->MOS3tBulkPot*(
here->MOS3Cbd*model->MOS3bulkJctBotGradingCoeff*
sarg/arg + here->MOS3Cbdsw*
model->MOS3bulkJctSideGradingCoeff*sargsw/arg);
lcapbd3 = here->MOS3Cbd*sarg*
model->MOS3bulkJctBotGradingCoeff*
(model->MOS3bulkJctBotGradingCoeff+1);
lcapbd3 += here->MOS3Cbdsw*sargsw*
model->MOS3bulkJctSideGradingCoeff*
(model->MOS3bulkJctSideGradingCoeff+1);
lcapbd3 = lcapbd3/(6*here->MOS3tBulkPot*
here->MOS3tBulkPot*arg*arg);
} else {
lcapbd=here->MOS3f2d + vbd * here->MOS3f3d;
lcapbd2=0.5*here->MOS3f3d;
lcapbd3=0;
}
/*
* meyer's capacitor model
*/
/*
* the meyer capacitance equations are in DEVqmeyer
* these expressions are derived from those equations.
* these expressions are incorrect; they assume just one
* controlling variable for each charge storage element
* while actually there are several; the MOS3 small
* signal ac linear model is also wrong because it
* ignores controlled capacitive elements. these can be
* corrected (as can the linear ss ac model) if the
* expressions for the charge are available
*/
{
double phi;
double cox;
double vddif;
double vddif1;
double vddif2;
double vgst;
/* von, lvgs and vdsat have already been adjusted for
possible source-drain interchange */
vgst = lvgs -von;
phi = here->MOS3tPhi;
cox = OxideCap;
if (vgst <= -phi) {
lcapgb2=lcapgb3=lcapgs2=lcapgs3=lcapgd2=lcapgd3=0;
} else if (vgst <= -phi/2) {
lcapgb2= -cox/(4*phi);
lcapgb3=lcapgs2=lcapgs3=lcapgd2=lcapgd3=0;
} else if (vgst <= 0) {
lcapgb2= -cox/(4*phi);
lcapgb3=lcapgs3=lcapgd2=lcapgd3=0;
lcapgs2 = cox/(3*phi);
} else { /* the MOS3modes are around because
vds has not been adjusted */
if (vdsat <= here->MOS3mode*vds) {
lcapgb2=lcapgb3=lcapgs2=lcapgs3=lcapgd2=lcapgd3=0;
} else {
vddif = 2.0*vdsat-here->MOS3mode*vds;
vddif1 = vdsat-here->MOS3mode*vds/*-1.0e-12*/;
vddif2 = vddif*vddif;
lcapgd2 = -vdsat*here->MOS3mode*vds*cox/(3*vddif*vddif2);
lcapgd3 = - here->MOS3mode*vds*cox*(vddif - 6*vdsat)/(9*vddif2*vddif2);
lcapgs2 = -vddif1*here->MOS3mode*vds*cox/(3*vddif*vddif2);
lcapgs3 = - here->MOS3mode*vds*cox*(vddif - 6*vddif1)/(9*vddif2*vddif2);
lcapgb2=lcapgb3=0;
}
}
}
/* the b-s and b-d diodes need no processing ... */
here->capbs2 = lcapbs2;
here->capbs3 = lcapbs3;
here->capbd2 = lcapbd2;
here->capbd3 = lcapbd3;
here->gbs2 = lgbs2;
here->gbs3 = lgbs3;
here->gbd2 = lgbd2;
here->gbd3 = lgbd3;
here->capgb2 = model->MOS3type*lcapgb2;
here->capgb3 = lcapgb3;
/*
* process to get Taylor coefficients, taking into
* account type and mode.
*/
gm2 = d_cdrain.d2_p2;
gb2 = d_cdrain.d2_q2;
gds2 = d_cdrain.d2_r2;
gmb = d_cdrain.d2_pq;
gbds = d_cdrain.d2_qr;
gmds = d_cdrain.d2_pr;
gm3 = d_cdrain.d3_p3;
gb3 = d_cdrain.d3_q3;
gds3 = d_cdrain.d3_r3;
gm2ds = d_cdrain.d3_p2r;
gm2b = d_cdrain.d3_p2q;
gb2ds = d_cdrain.d3_q2r;
gmb2 = d_cdrain.d3_pq2;
gmds2 = d_cdrain.d3_pr2;
gbds2 = d_cdrain.d3_qr2;
gmbds = d_cdrain.d3_pqr;
if (here->MOS3mode == 1)
{
/* normal mode - no source-drain interchange */
here->cdr_x2 = gm2;
here->cdr_y2 = gb2;;
here->cdr_z2 = gds2;;
here->cdr_xy = gmb;
here->cdr_yz = gbds;
here->cdr_xz = gmds;
here->cdr_x3 = gm3;
here->cdr_y3 = gb3;
here->cdr_z3 = gds3;
here->cdr_x2z = gm2ds;
here->cdr_x2y = gm2b;
here->cdr_y2z = gb2ds;
here->cdr_xy2 = gmb2;
here->cdr_xz2 = gmds2;
here->cdr_yz2 = gbds2;
here->cdr_xyz = gmbds;
/* the gate caps have been divided and made into
Taylor coeffs., but not adjusted for type */
here->capgs2 = model->MOS3type*lcapgs2;
here->capgs3 = lcapgs3;
here->capgd2 = model->MOS3type*lcapgd2;
here->capgd3 = lcapgd3;
} else {
/*
* inverse mode - source and drain interchanged
*/
here->cdr_x2 = -gm2;
here->cdr_y2 = -gb2;
here->cdr_z2 = -(gm2 + gb2 + gds2 + 2*(gmb + gmds + gbds));
here->cdr_xy = -gmb;
here->cdr_yz = gmb + gb2 + gbds;
here->cdr_xz = gm2 + gmb + gmds;
here->cdr_x3 = -gm3;
here->cdr_y3 = -gb3;
here->cdr_z3 = gm3 + gb3 + gds3 +
3*(gm2b + gm2ds + gmb2 + gb2ds + gmds2 + gbds2) + 6*gmbds ;
here->cdr_x2z = gm3 + gm2b + gm2ds;
here->cdr_x2y = -gm2b;
here->cdr_y2z = gmb2 + gb3 + gb2ds;
here->cdr_xy2 = -gmb2;
here->cdr_xz2 = -(gm3 + 2*(gm2b + gm2ds + gmbds) +
gmb2 + gmds2);
here->cdr_yz2 = -(gb3 + 2*(gmb2 + gb2ds + gmbds) +
gm2b + gbds2);
here->cdr_xyz = gm2b + gmb2 + gmbds;
here->capgs2 = model->MOS3type*lcapgd2;
here->capgs3 = lcapgd3;
here->capgd2 = model->MOS3type*lcapgs2;
here->capgd3 = lcapgs3;
}
/* now to adjust for type and multiply by factors to convert to Taylor coeffs. */
here->cdr_x2 = 0.5*model->MOS3type*here->cdr_x2;
here->cdr_y2 = 0.5*model->MOS3type*here->cdr_y2;
here->cdr_z2 = 0.5*model->MOS3type*here->cdr_z2;
here->cdr_xy = model->MOS3type*here->cdr_xy;
here->cdr_yz = model->MOS3type*here->cdr_yz;
here->cdr_xz = model->MOS3type*here->cdr_xz;
here->cdr_x3 = here->cdr_x3/6.;
here->cdr_y3 = here->cdr_y3/6.;
here->cdr_z3 = here->cdr_z3/6.;
here->cdr_x2z = 0.5*here->cdr_x2z;
here->cdr_x2y = 0.5*here->cdr_x2y;
here->cdr_y2z = 0.5*here->cdr_y2z;
here->cdr_xy2 = 0.5*here->cdr_xy2;
here->cdr_xz2 = 0.5*here->cdr_xz2;
here->cdr_yz2 = 0.5*here->cdr_yz2;
}
}
return(OK);
}
int
MESdSetup(GENmodel *inModel, CKTcircuit *ckt)
/* actually load the current resistance value into the
* sparse matrix previously provided
*/
{
MESmodel *model = (MESmodel*)inModel;
MESinstance *here;
double afact;
double beta;
double betap;
double cdrain;
double cg;
double cgd;
double csat;
double czgd;
double czgs;
double denom;
double evgd;
double evgs;
double gdpr;
double gspr;
double invdenom;
double lfact;
double phib;
double prod;
double vcap;
double vcrit;
double vds;
double vgd;
double vgs;
double vgst;
double vto;
double lggd1;
double lggd2;
double lggd3;
double lggs1;
double lggs2;
double lggs3;
Dderivs d_cdrain, d_qgs, d_qgd;
Dderivs d_p, d_q, d_r, d_zero;
/* loop through all the models */
for( ; model != NULL; model = model->MESnextModel ) {
/* loop through all the instances of the model */
for (here = model->MESinstances; here != NULL ;
here=here->MESnextInstance) {
/*
* dc model parameters
*/
beta = model->MESbeta * here->MESm * here->MESarea;
gdpr = model->MESdrainConduct * here->MESm * here->MESarea;
gspr = model->MESsourceConduct * here->MESm * here->MESarea;
csat = model->MESgateSatCurrent * here->MESm * here->MESarea;
vcrit = model->MESvcrit;
vto = model->MESthreshold;
/*
* initialization
*/
/*
* compute new nonlinear branch voltages
*/
vgs = model->MEStype*
(*(ckt->CKTrhsOld+ here->MESgateNode)-
*(ckt->CKTrhsOld+
here->MESsourcePrimeNode));
vgd = model->MEStype*
(*(ckt->CKTrhsOld+here->MESgateNode)-
*(ckt->CKTrhsOld+
here->MESdrainPrimeNode));
/*
* determine dc current and derivatives
*/
vds = vgs-vgd;
if (vgs <= -5*CONSTvt0) {
lggs1 = -csat/vgs+ckt->CKTgmin;
lggs2=lggs3=0;
cg = lggs1*vgs;
} else {
evgs = exp(vgs/CONSTvt0);
lggs1 = csat*evgs/CONSTvt0+ckt->CKTgmin;
lggs2 = (lggs1-ckt->CKTgmin)/(CONSTvt0*2);
lggs3 = lggs2/(3*CONSTvt0);
cg = csat*(evgs-1)+ckt->CKTgmin*vgs;
}
if (vgd <= -5*CONSTvt0) {
lggd1 = -csat/vgd+ckt->CKTgmin;
lggd2=lggd3=0;
cgd = lggd1*vgd;
} else {
evgd = exp(vgd/CONSTvt0);
lggd1 = csat*evgd/CONSTvt0+ckt->CKTgmin;
lggd2 = (lggd1-ckt->CKTgmin)/(CONSTvt0*2);
lggd3 = lggd2/(3*CONSTvt0);
cgd = csat*(evgd-1)+ckt->CKTgmin*vgd;
}
cg = cg+cgd;
/*
* compute drain current and derivitives for normal mode
*/
/* until now, we were using the real vgs, vgd, and vds */
{
/* converting (temporarily) to local vgs, vgd, and vds */
double vgsreal=vgs;
double vgdreal=vgd;
double vdsreal=vds;
Dderivs d_afact, d_lfact;
Dderivs d_betap, d_denom, d_invdenom;
Dderivs d_prod;
Dderivs d_vgst;
if (vdsreal < 0.0) {
vgs = vgdreal;
vgd = vgsreal;
vds = -vdsreal;
here->MESmode = -1;
/* source-drain interchange */
}
else
here->MESmode = 1;
d_p.value = 0.0;
d_p.d1_p = 1.0;
d_p.d1_q = 0.0;
d_p.d1_r = 0.0;
d_p.d2_p2 = 0.0;
d_p.d2_q2 = 0.0;
d_p.d2_r2 = 0.0;
d_p.d2_pq = 0.0;
d_p.d2_qr = 0.0;
d_p.d2_pr = 0.0;
d_p.d3_p3 = 0.0;
d_p.d3_q3 = 0.0;
d_p.d3_r3 = 0.0;
d_p.d3_p2r = 0.0;
d_p.d3_p2q = 0.0;
d_p.d3_q2r = 0.0;
d_p.d3_pq2 = 0.0;
d_p.d3_pr2 = 0.0;
d_p.d3_qr2 = 0.0;
d_p.d3_pqr = 0.0;
EqualDeriv(&d_q,&d_p);
EqualDeriv(&d_r,&d_p);
EqualDeriv(&d_zero,&d_p);
d_q.d1_p = d_r.d1_p = d_zero.d1_p = 0.0;
d_q.d1_q = d_r.d1_r = 1.0;
d_p.value = vgs; d_r.value = vds;
/* p =vgs; q= nothing in particular ; r = vds */
vgst = vgs-model->MESthreshold;
EqualDeriv(&d_vgst,&d_p);
d_vgst.value = vgst;
/*
* normal mode, cutoff region
*/
if (vgst <= 0) {
cdrain = 0;
EqualDeriv(&d_cdrain,&d_zero);
} else {
prod = 1 + model->MESlModulation * vds;
TimesDeriv(&d_prod,&d_r,model->MESlModulation);
d_prod.value = prod;
betap = beta * prod;
TimesDeriv(&d_betap,&d_prod,beta);
denom = 1 + model->MESb * vgst;
TimesDeriv(&d_denom,&d_vgst,model->MESb);
d_denom.value = denom;
invdenom = 1 / denom;
InvDeriv(&d_invdenom,&d_denom);
/*
* normal mode, saturation region
*/
cdrain = betap * vgst * vgst * invdenom;
MultDeriv(&d_cdrain,&d_betap,&d_vgst);
MultDeriv(&d_cdrain,&d_cdrain,&d_vgst);
MultDeriv(&d_cdrain,&d_cdrain,&d_invdenom);
if (vds < ( 3 / model->MESalpha ) ) {
/*
* normal mode, linear region
*/
afact = 1 - model->MESalpha * vds / 3;
TimesDeriv(&d_afact,&d_r,-model->MESalpha/3.0);
d_afact.value = afact;
lfact = 1 - afact * afact * afact;
CubeDeriv(&d_lfact,&d_afact);
TimesDeriv(&d_lfact,&d_lfact,-1.0);
d_lfact.value += 1.0;
cdrain = betap*vgst*vgst*invdenom*lfact;
MultDeriv(&d_cdrain,&d_betap,&d_vgst);
MultDeriv(&d_cdrain,&d_cdrain,&d_vgst);
MultDeriv(&d_cdrain,&d_cdrain,&d_invdenom);
MultDeriv(&d_cdrain,&d_cdrain,&d_lfact);
}
}
/* converting back to real vgs, vgd, vds */
if (here->MESmode == -1) {
vgs = vgsreal;
vgd = vgdreal;
vds = vdsreal;
}
}
/*
* charge storage elements
*/
{ /* code block */
czgs = model->MEScapGS * here->MESm * here->MESarea;
czgd = model->MEScapGD * here->MESm * here->MESarea;
phib = model->MESgatePotential;
vcap = 1 / model->MESalpha;
/*
* qgga = qggnew(vgs,vgd,phib,vcap,vto,czgs,czgd,&cgsna,&cgdna);
*/
/* function qggnew - private, used by MESload*/
{
double veroot,veff1,veff2,del,vnroot,vnew1,vnew3,vmax,ext;
double qroot,par1,cfact,cplus,cminus;
Dderivs d_vnroot;
Dderivs d_cgsnew, d_cgdnew, d_dummy, d_dummy2;
Dderivs d_ext, d_qroot, d_par1, d_cfact, d_cplus, d_cminus;
Dderivs d_veroot, d_veff1, d_veff2, d_vnew1, d_vnew3;
/* now p=vgs, q=vgd, r= nothing */
d_q.value = vgd; d_p.value = vgs;
veroot = sqrt( (vgs - vgd) * (vgs - vgd) + vcap*vcap );
TimesDeriv(&d_veroot,&d_q,-1.0);
PlusDeriv(&d_veroot,&d_veroot,&d_p);
MultDeriv(&d_veroot,&d_veroot,&d_veroot);
d_veroot.value += vcap*vcap;
SqrtDeriv(&d_veroot,&d_veroot);
veff1 = 0.5 * (vgs + vgd + veroot);
PlusDeriv(&d_veff1,&d_veroot,&d_p);
PlusDeriv(&d_veff1,&d_veff1,&d_q);
TimesDeriv(&d_veff1,&d_veff1,0.5);
veff2 = veff1 - veroot;
TimesDeriv(&d_veff2,&d_veroot,-1.0);
PlusDeriv(&d_veff2,&d_veff2,&d_veff1);
del = 0.2;/*const*/
vnroot = sqrt( (veff1 - vto)*(veff1 - vto) + del * del );
EqualDeriv(&d_vnroot,&d_veff1);
d_vnroot.value -= vto;
MultDeriv(&d_vnroot,&d_vnroot,&d_vnroot);
d_vnroot.value += del*del;
SqrtDeriv(&d_vnroot,&d_vnroot);
vnew1 = 0.5 * (veff1 + vto + vnroot);
PlusDeriv(&d_vnew1,&d_veff1,&d_vnroot);
d_vnew1.value += vto;
TimesDeriv(&d_vnew1,&d_vnew1,0.5);
vnew3 = vnew1;
EqualDeriv(&d_vnew3,&d_vnew1);
vmax = 0.5;/*const*/
if ( vnew1 < vmax ) {
ext=0;
EqualDeriv(&d_ext,&d_zero);
} else {
vnew1 = vmax;
EqualDeriv(&d_vnew1,&d_zero);
d_vnew1.value = vmax;
ext = (vnew3 - vmax)/sqrt(1 - vmax/phib);
EqualDeriv(&d_ext,&d_vnew3);
d_ext.value -= vmax;
TimesDeriv(&d_ext,&d_ext,1/sqrt(1 - vmax/phib));
}
qroot = sqrt(1 - vnew1/phib);
TimesDeriv(&d_qroot,&d_vnew1,-1/phib);
d_qroot.value += 1.0;
SqrtDeriv(&d_qroot,&d_qroot);
/*
* qggval = czgs * (2*phib*(1-qroot) + ext) + czgd*veff2;
*/
par1 = 0.5 * ( 1 + (veff1-vto)/vnroot);
EqualDeriv(&d_par1,&d_veff1);
d_par1.value -= vto;
DivDeriv(&d_par1,&d_par1,&d_vnroot);
d_par1.value += 1.0;
TimesDeriv(&d_par1,&d_par1,0.5);
cfact = (vgs- vgd)/veroot;
TimesDeriv(&d_cfact,&d_q,-1.0);
PlusDeriv(&d_cfact,&d_cfact,&d_p);
DivDeriv(&d_cfact,&d_cfact,&d_veroot);
cplus = 0.5 * (1 + cfact);
TimesDeriv(&d_cplus,&d_cfact,0.5);
d_cplus.value += 0.5;
cminus = cplus - cfact;
TimesDeriv(&d_cminus,&d_cfact,-0.5);
d_cminus.value += 0.5;
/*
*cgsnew = czgs/qroot*par1*cplus + czgd*cminus;
*cgdnew = czgs/qroot*par1*cminus + czgd*cplus;
*
* assuming qgs = vgs*cgsnew
* and qgd = vgd*cgsnew
*
* This is probably wrong but then so is the a.c. analysis
* routine and everything else
*
*/
MultDeriv(&d_dummy,&d_qroot,&d_par1);
InvDeriv(&d_dummy,&d_dummy);
TimesDeriv(&d_dummy,&d_dummy,czgs);
TimesDeriv(&d_cgsnew,&d_cminus,czgd);
MultDeriv(&d_dummy2,&d_dummy,&d_cplus);
PlusDeriv(&d_cgsnew,&d_cgsnew,&d_dummy2);
TimesDeriv(&d_cgdnew,&d_cplus,czgd);
MultDeriv(&d_dummy2,&d_dummy,&d_cminus);
PlusDeriv(&d_cgdnew,&d_cgdnew,&d_dummy2);
MultDeriv(&d_qgs,&d_cgsnew,&d_p);
MultDeriv(&d_qgd,&d_cgdnew,&d_q);
}
}
if (here->MESmode == 1)
{
/* normal mode - no source-drain interchange */
here->cdr_x = d_cdrain.d1_p;
here->cdr_z = d_cdrain.d1_r;
here->cdr_x2 = d_cdrain.d2_p2;
here->cdr_z2 = d_cdrain.d2_r2;
here->cdr_xz = d_cdrain.d2_pr;
here->cdr_x3 = d_cdrain.d3_p3;
here->cdr_z3 = d_cdrain.d3_r3;;
here->cdr_x2z = d_cdrain.d3_p2r;
here->cdr_xz2 = d_cdrain.d3_pr2;
} else {
/*
* inverse mode - source and drain interchanged
*/
here->cdr_x = -d_cdrain.d1_p;
here->cdr_z = d_cdrain.d1_p + d_cdrain.d1_r;
here->cdr_x2 = -d_cdrain.d2_p2;
here->cdr_z2 = -(d_cdrain.d2_p2 + d_cdrain.d2_r2 + 2*d_cdrain.d2_pr);
here->cdr_xz = d_cdrain.d2_p2 + d_cdrain.d2_pr;
here->cdr_x3 = -d_cdrain.d3_p3;
here->cdr_z3 = d_cdrain.d3_p3 + d_cdrain.d3_r3 + 3*(d_cdrain.d3_p2r + d_cdrain.d3_pr2 ) ;
here->cdr_x2z = d_cdrain.d3_p3 + d_cdrain.d3_p2r;
here->cdr_xz2 = -(d_cdrain.d3_p3 + 2*d_cdrain.d3_p2r + d_cdrain.d3_pr2);
}
/* now to adjust for type and multiply by factors to convert to Taylor coeffs. */
here->cdr_x2 = 0.5*model->MEStype*here->cdr_x2;
here->cdr_z2 = 0.5*model->MEStype*here->cdr_z2;
here->cdr_xz = model->MEStype*here->cdr_xz;
here->cdr_x3 = here->cdr_x3/6.;
here->cdr_z3 = here->cdr_z3/6.;
here->cdr_x2z = 0.5*here->cdr_x2z;
here->cdr_xz2 = 0.5*here->cdr_xz2;
here->ggs3 = lggs3;
here->ggd3 = lggd3;
here->ggs2 = model->MEStype*lggs2;
here->ggd2 = model->MEStype*lggd2;
here->qgs_x2 = 0.5*model->MEStype*d_qgs.d2_p2;
here->qgs_y2 = 0.5*model->MEStype*d_qgs.d2_q2;
here->qgs_xy = model->MEStype*d_qgs.d2_pq;
here->qgs_x3 = d_qgs.d3_p3/6.;
here->qgs_y3 = d_qgs.d3_q3/6.;
here->qgs_x2y = 0.5*d_qgs.d3_p2q;
here->qgs_xy2 = 0.5*d_qgs.d3_pq2;
here->qgd_x2 = 0.5*model->MEStype*d_qgd.d2_p2;
here->qgd_y2 = 0.5*model->MEStype*d_qgd.d2_q2;
here->qgd_xy = model->MEStype*d_qgd.d2_pq;
here->qgd_x3 = d_qgd.d3_p3/6.;
here->qgd_y3 = d_qgd.d3_q3/6.;
here->qgd_x2y = 0.5*d_qgd.d3_p2q;
here->qgd_xy2 = 0.5*d_qgd.d3_pq2;
}
}
return(OK);
}
