IOPAU( "v1", LTRA_V1, IF_REAL , "Initial voltage at end 1"),
IOPAU( "v2", LTRA_V2, IF_REAL , "Initial voltage at end 2"),
IOPAU( "i1", LTRA_I1, IF_REAL , "Initial current at end 1"),
IOPAU( "i2", LTRA_I2, IF_REAL , "Initial current at end 2"),
IP("ic", LTRA_IC, IF_REALVEC,"Initial condition vector:v1,i1,v2,i2"),
OPU("pos_node1", LTRA_POS_NODE1,IF_INTEGER,"Positive node of end 1 of t-line"),
OPU("neg_node1", LTRA_NEG_NODE1,IF_INTEGER,"Negative node of end 1 of t.line"),
OPU("pos_node2", LTRA_POS_NODE2,IF_INTEGER,"Positive node of end 2 of t-line"),
OPU("neg_node2", LTRA_NEG_NODE2,IF_INTEGER,"Negative node of end 2 of t-line")
};
IFparm LTRAmPTable[] = { /* model parameters */
IOP( "ltra", LTRA_MOD_LTRA, IF_FLAG, "LTRA model"),
IOPU( "r", LTRA_MOD_R, IF_REAL , "Resistance per metre"),
IOPAU( "l", LTRA_MOD_L, IF_REAL , "Inductance per metre"),
IOPR( "g", LTRA_MOD_G, IF_REAL , "Conductance per metre"),
IOPAU( "c", LTRA_MOD_C, IF_REAL , "Capacitance per metre"),
IOPU( "len", LTRA_MOD_LEN, IF_REAL , "length of line"),
OP( "rel", LTRA_MOD_RELTOL, IF_REAL, "Rel. rate of change of deriv. for bkpt"),
OP( "abs", LTRA_MOD_ABSTOL, IF_REAL, "Abs. rate of change of deriv. for bkpt"),
IOPU("nocontrol", LTRA_MOD_NOCONTROL, IF_FLAG, "No timestep control"),
IOPU( "steplimit", LTRA_MOD_STEPLIMIT, IF_FLAG,
"always limit timestep to 0.8*(delay of line)"),
IOPU( "nosteplimit", LTRA_MOD_NOSTEPLIMIT, IF_FLAG,
"don't always limit timestep to 0.8*(delay of line)"),
IOPU( "lininterp", LTRA_MOD_LININTERP, IF_FLAG, "use linear interpolation"),
IOPU("quadinterp", LTRA_MOD_QUADINTERP, IF_FLAG, "use quadratic interpolation"),
IOPU("mixedinterp", LTRA_MOD_MIXEDINTERP, IF_FLAG,
"use linear interpolation if quadratic results look unacceptable"),
IOPU("truncnr", LTRA_MOD_TRUNCNR, IF_FLAG,
OPU( "sens_w_real", MOS2_W_SENS_REAL, IF_REAL,
"dc sensitivity and real part of ac sensitivity wrt width"),
OPU( "sens_w_imag", MOS2_W_SENS_IMAG, IF_REAL,
"imag part of ac sensitivity wrt width"),
OPU( "sens_w_mag", MOS2_W_SENS_MAG, IF_REAL,
"sensitivity wrt w of ac magnitude"),
OPU( "sens_w_ph", MOS2_W_SENS_PH, IF_REAL,
"sensitivity wrt w of ac phase"),
OPU( "sens_w_cplx", MOS2_W_SENS_CPLX, IF_COMPLEX,
"ac sensitivity wrt width")
};
IFparm MOS2mPTable[] = { /* model parameters */
OP("type", MOS2_MOD_TYPE, IF_STRING ,"N-channel or P-channel MOS"),
IOP("vto", MOS2_MOD_VTO, IF_REAL ,"Threshold voltage"),
IOPR("vt0", MOS2_MOD_VTO, IF_REAL ,"Threshold voltage"),
IOP("kp", MOS2_MOD_KP, IF_REAL ,"Transconductance parameter"),
IOP("gamma", MOS2_MOD_GAMMA, IF_REAL ,"Bulk threshold parameter"),
IOP("phi", MOS2_MOD_PHI, IF_REAL ,"Surface potential"),
IOP("lambda",MOS2_MOD_LAMBDA,IF_REAL ,"Channel length modulation"),
IOP("rd", MOS2_MOD_RD, IF_REAL ,"Drain ohmic resistance"),
IOP("rs", MOS2_MOD_RS, IF_REAL ,"Source ohmic resistance"),
IOP("cbd", MOS2_MOD_CBD, IF_REAL ,"B-D junction capacitance"),
IOP("cbs", MOS2_MOD_CBS, IF_REAL ,"B-S junction capacitance"),
IOP("is", MOS2_MOD_IS, IF_REAL ,"Bulk junction sat. current"),
IOP("pb", MOS2_MOD_PB, IF_REAL ,"Bulk junction potential"),
IOPA("cgso", MOS2_MOD_CGSO, IF_REAL ,"Gate-source overlap cap."),
IOPA("cgdo", MOS2_MOD_CGDO, IF_REAL ,"Gate-drain overlap cap."),
IOPA("cgbo", MOS2_MOD_CGBO, IF_REAL ,"Gate-bulk overlap cap."),
IOP("rsh", MOS2_MOD_RSH, IF_REAL ,"Sheet resistance"),
IOPA("cj", MOS2_MOD_CJ, IF_REAL ,"Bottom junction cap per area"),
INDask,
NULL,
INDpzLoad,
NULL,
NULL, /* DISTO */
NULL, /* NOISE */
&INDiSize,
&INDmSize
};
#ifdef MUTUAL
static IFparm MUTpTable[] = { /* parameters */
IOPAP("k", MUT_COEFF,IF_REAL, "Mutual inductance"),
IOPR( "coefficient",MUT_COEFF,IF_REAL, "Mutual inductance"),
IOP( "inductor1", MUT_IND1, IF_INSTANCE, "First coupled inductor"),
IOP( "inductor2", MUT_IND2, IF_INSTANCE, "Second coupled inductor"),
};
/* model parameters */
/* static IFparm MUTmPTable[] = { }; */
static IFkeys MUTkeys[] = {
{ 'k', 0, NULL, 0, 2 },
};
static int MUTkSize = NUMELEMS(MUTkeys);
static int MUTpTSize = NUMELEMS(MUTpTable);
static int MUTmPTSize = 0;
OPU("qbx", VBIC_QUEST_QBX, IF_REAL, "Charge storage B-X junction"),
OPU("cqbx", VBIC_QUEST_CQBX, IF_REAL, "Cap. due to charge storage in B-X jct."),
OPU("sens_dc", VBIC_QUEST_SENS_DC, IF_REAL, "DC sensitivity "),
OPU("sens_real",VBIC_QUEST_SENS_REAL, IF_REAL, "Real part of AC sensitivity"),
OPU("sens_imag",VBIC_QUEST_SENS_IMAG,IF_REAL, "DC sens. & imag part of AC sens."),
OPU("sens_mag", VBIC_QUEST_SENS_MAG, IF_REAL, "Sensitivity of AC magnitude"),
OPU("sens_ph", VBIC_QUEST_SENS_PH, IF_REAL, "Sensitivity of AC phase"),
OPU("sens_cplx",VBIC_QUEST_SENS_CPLX, IF_COMPLEX, "AC sensitivity")
};
IFparm VBICmPTable[] = { /* model parameters */
OP("type", VBIC_MOD_TYPE, IF_STRING, "NPN or PNP"),
IOPU("npn", VBIC_MOD_NPN, IF_FLAG, "NPN type device"),
IOPU("pnp", VBIC_MOD_PNP, IF_FLAG, "PNP type device"),
IOP("tnom", VBIC_MOD_TNOM, IF_REAL, "Parameter measurement temperature"),
IOPR("tref", VBIC_MOD_TNOM, IF_REAL, "Parameter measurement temperature"),
IOP("rcx", VBIC_MOD_RCX, IF_REAL, "Extrinsic coll resistance"),
IOP("rci", VBIC_MOD_RCI, IF_REAL, "Intrinsic coll resistance"),
IOP("vo", VBIC_MOD_VO, IF_REAL, "Epi drift saturation voltage"),
IOP("gamm", VBIC_MOD_GAMM, IF_REAL, "Epi doping parameter"),
IOP("hrcf", VBIC_MOD_HRCF, IF_REAL, "High current RC factor"),
IOP("rbx", VBIC_MOD_RBX, IF_REAL, "Extrinsic base resistance"),
IOP("rbi", VBIC_MOD_RBI, IF_REAL, "Intrinsic base resistance"),
IOP("re", VBIC_MOD_RE, IF_REAL, "Intrinsic emitter resistance"),
IOP("rs", VBIC_MOD_RS, IF_REAL, "Intrinsic substrate resistance"),
IOP("rbp", VBIC_MOD_RBP, IF_REAL, "Parasitic base resistance"),
IOP("is", VBIC_MOD_IS, IF_REAL, "Transport saturation current"),
IOP("nf", VBIC_MOD_NF, IF_REAL, "Forward emission coefficient"),
IOP("nr", VBIC_MOD_NR, IF_REAL, "Reverse emission coefficient"),
IOP("fc", VBIC_MOD_FC, IF_REAL, "Fwd bias depletion capacitance limit"),
IOP("cbeo", VBIC_MOD_CBEO, IF_REAL, "Extrinsic B-E overlap capacitance"),
IOP( "kt2", B3SOIFD_MOD_KT2, IF_REAL, "Body-coefficient of kt1"),
IOP( "k2", B3SOIFD_MOD_K2, IF_REAL, "Bulk effect coefficient 2"),
IOP( "k3", B3SOIFD_MOD_K3, IF_REAL, "Narrow width effect coefficient"),
IOP( "k3b", B3SOIFD_MOD_K3B, IF_REAL, "Body effect coefficient of k3"),
IOP( "w0", B3SOIFD_MOD_W0, IF_REAL, "Narrow width effect parameter"),
IOP( "nlx", B3SOIFD_MOD_NLX, IF_REAL, "Lateral non-uniform doping effect"),
IOP( "dvt0", B3SOIFD_MOD_DVT0, IF_REAL, "Short channel effect coeff. 0"),
IOP( "dvt1", B3SOIFD_MOD_DVT1, IF_REAL, "Short channel effect coeff. 1"),
IOP( "dvt2", B3SOIFD_MOD_DVT2, IF_REAL, "Short channel effect coeff. 2"),
IOP( "dvt0w", B3SOIFD_MOD_DVT0W, IF_REAL, "Narrow Width coeff. 0"),
IOP( "dvt1w", B3SOIFD_MOD_DVT1W, IF_REAL, "Narrow Width effect coeff. 1"),
IOP( "dvt2w", B3SOIFD_MOD_DVT2W, IF_REAL, "Narrow Width effect coeff. 2"),
IOP( "drout", B3SOIFD_MOD_DROUT, IF_REAL, "DIBL coefficient of output resistance"),
IOP( "dsub", B3SOIFD_MOD_DSUB, IF_REAL, "DIBL coefficient in the subthreshold region"),
IOP( "vth0", B3SOIFD_MOD_VTH0, IF_REAL,"Threshold voltage"),
IOPR("vtho", B3SOIFD_MOD_VTH0, IF_REAL,"Threshold voltage"),
IOP( "ua", B3SOIFD_MOD_UA, IF_REAL, "Linear gate dependence of mobility"),
IOP( "ua1", B3SOIFD_MOD_UA1, IF_REAL, "Temperature coefficient of ua"),
IOP( "ub", B3SOIFD_MOD_UB, IF_REAL, "Quadratic gate dependence of mobility"),
IOP( "ub1", B3SOIFD_MOD_UB1, IF_REAL, "Temperature coefficient of ub"),
IOP( "uc", B3SOIFD_MOD_UC, IF_REAL, "Body-bias dependence of mobility"),
IOP( "uc1", B3SOIFD_MOD_UC1, IF_REAL, "Temperature coefficient of uc"),
IOP( "u0", B3SOIFD_MOD_U0, IF_REAL, "Low-field mobility at Tnom"),
IOP( "ute", B3SOIFD_MOD_UTE, IF_REAL, "Temperature coefficient of mobility"),
IOP( "voff", B3SOIFD_MOD_VOFF, IF_REAL, "Threshold voltage offset"),
IOP( "tnom", B3SOIFD_MOD_TNOM, IF_REAL, "Parameter measurement temperature"),
IOP( "cgso", B3SOIFD_MOD_CGSO, IF_REAL, "Gate-source overlap capacitance per width"),
IOP( "cgdo", B3SOIFD_MOD_CGDO, IF_REAL, "Gate-drain overlap capacitance per width"),
IOP( "cgeo", B3SOIFD_MOD_CGEO, IF_REAL, "Gate-substrate overlap capacitance"),
IOP( "xpart", B3SOIFD_MOD_XPART, IF_REAL, "Channel charge partitioning"),
IOP( "delta", B3SOIFD_MOD_DELTA, IF_REAL, "Effective Vds parameter"),
"L+",
"L-"
};
int INDnSize = NUMELEMS(INDnames);
int INDpTSize = NUMELEMS(INDpTable);
int INDmPTSize = 0;
int INDiSize = sizeof(INDinstance);
int INDmSize = sizeof(INDmodel);
#ifdef MUTUAL
IFparm MUTpTable[] = { /* parameters */
IOPAP( "k", MUT_COEFF, IF_REAL , "Mutual inductance"),
IOPR( "coefficient", MUT_COEFF, IF_REAL , ""),
IOP( "inductor1", MUT_IND1, IF_INSTANCE, "First coupled inductor"),
IOP( "inductor2", MUT_IND2, IF_INSTANCE, "Second coupled inductor"),
IP( "sens_coeff", MUT_COEFF_SENS, IF_FLAG,
"flag to request sensitivity WRT coupling factor"),
OPU( "sens_dc", MUT_QUEST_SENS_DC, IF_REAL, "dc sensitivity "),
OPU( "sens_real", MUT_QUEST_SENS_REAL, IF_REAL, "real part of ac sensitivity"),
OPU( "sens_imag", MUT_QUEST_SENS_IMAG, IF_REAL,
"dc sensitivity and imag part of ac sensitivty"),
OPU( "sens_mag", MUT_QUEST_SENS_MAG, IF_REAL, "sensitivity of AC magnitude"),
OPU( "sens_ph", MUT_QUEST_SENS_PH, IF_REAL, "sensitivity of AC phase"),
OPU( "sens_cplx", MUT_QUEST_SENS_CPLX, IF_COMPLEX, "ac sensitivity")
};
int MUTnSize = NUMELEMS(INDnames);
int MUTpTSize = NUMELEMS(MUTpTable);
OP("ggd", JFET_GGD, IF_REAL, "Conductance G-D"),
OPU("qgs", JFET_QGS, IF_REAL,"Charge storage G-S junction"),
OPU("qgd", JFET_QGD, IF_REAL,"Charge storage G-D junction"),
OPU("cqgs",JFET_CQGS, IF_REAL,
"Capacitance due to charge storage G-S junction"),
OPU("cqgd",JFET_CQGD, IF_REAL,
"Capacitance due to charge storage G-D junction"),
OPU("p", JFET_POWER,IF_REAL,"Power dissipated by the JFET"),
};
IFparm JFETmPTable[] = { /* model parameters */
OP("type", JFET_MOD_TYPE, IF_STRING, "N-type or P-type JFET model"),
IP("njf", JFET_MOD_NJF, IF_FLAG,"N type JFET model"),
IP("pjf", JFET_MOD_PJF, IF_FLAG,"P type JFET model"),
IOP("vt0", JFET_MOD_VTO, IF_REAL,"Threshold voltage"),
IOPR("vto", JFET_MOD_VTO, IF_REAL,"Threshold voltage"),
IOP("beta", JFET_MOD_BETA, IF_REAL,"Transconductance parameter"),
IOP("lambda", JFET_MOD_LAMBDA, IF_REAL,"Channel length modulation param."),
IOP("rd", JFET_MOD_RD, IF_REAL,"Drain ohmic resistance"),
OPU("gd", JFET_MOD_DRAINCONDUCT, IF_REAL,"Drain conductance"),
IOP("rs", JFET_MOD_RS, IF_REAL,"Source ohmic resistance"),
OPU("gs",JFET_MOD_SOURCECONDUCT,IF_REAL,"Source conductance"),
IOPA("cgs", JFET_MOD_CGS, IF_REAL,"G-S junction capactance"),
IOPA("cgd", JFET_MOD_CGD, IF_REAL,"G-D junction cap"),
IOP("pb", JFET_MOD_PB, IF_REAL,"Gate junction potential"),
IOP("is", JFET_MOD_IS, IF_REAL,"Gate junction saturation current"),
IOP("fc", JFET_MOD_FC, IF_REAL,"Forward bias junction fit parm."),
/* Modification for Sydney University JFET model */
IOP("b", JFET_MOD_B, IF_REAL,"Doping tail parameter"),
/* end Sydney University mod. */
IOPU("tnom", JFET_MOD_TNOM, IF_REAL,"parameter measurement temperature"),
OPU("sens_w_real",MOS3_W_SENS_REAL, IF_REAL,
"real part of ac sensitivity wrt width"),
OPU("sens_w_imag",MOS3_W_SENS_IMAG, IF_REAL,
"imag part of ac sensitivity wrt width"),
OPU("sens_w_mag", MOS3_W_SENS_MAG, IF_REAL,
"sensitivity wrt w of ac magnitude"),
OPU("sens_w_ph", MOS3_W_SENS_PH, IF_REAL, "sensitivity wrt w of ac phase"),
OPU("sens_w_cplx",MOS3_W_SENS_CPLX, IF_COMPLEX, "ac sensitivity wrt width")
};
IFparm MOS3mPTable[] = { /* model parameters */
OP("type", MOS3_MOD_TYPE, IF_STRING ,"N-channel or P-channel MOS"),
IP("nmos", MOS3_MOD_NMOS, IF_FLAG ,"N type MOSfet model"),
IP("pmos", MOS3_MOD_PMOS, IF_FLAG ,"P type MOSfet model"),
IOP("vto", MOS3_MOD_VTO, IF_REAL ,"Threshold voltage"),
IOPR("vt0", MOS3_MOD_VTO, IF_REAL ,"Threshold voltage"),
IOP("kp", MOS3_MOD_KP, IF_REAL ,"Transconductance parameter"),
IOP("gamma", MOS3_MOD_GAMMA, IF_REAL ,"Bulk threshold parameter"),
IOP("phi", MOS3_MOD_PHI, IF_REAL ,"Surface potential"),
IOP("rd", MOS3_MOD_RD, IF_REAL ,"Drain ohmic resistance"),
IOP("rs", MOS3_MOD_RS, IF_REAL ,"Source ohmic resistance"),
IOPA("cbd", MOS3_MOD_CBD, IF_REAL ,"B-D junction capacitance"),
IOPA("cbs", MOS3_MOD_CBS, IF_REAL ,"B-S junction capacitance"),
IOP("is", MOS3_MOD_IS, IF_REAL ,"Bulk junction sat. current"),
IOP("pb", MOS3_MOD_PB, IF_REAL ,"Bulk junction potential"),
IOPA("cgso", MOS3_MOD_CGSO, IF_REAL ,"Gate-source overlap cap."),
IOPA("cgdo", MOS3_MOD_CGDO, IF_REAL ,"Gate-drain overlap cap."),
IOPA("cgbo", MOS3_MOD_CGBO, IF_REAL ,"Gate-bulk overlap cap."),
IOP("rsh", MOS3_MOD_RSH, IF_REAL ,"Sheet resistance"),
IOPA("cj", MOS3_MOD_CJ, IF_REAL ,"Bottom junction cap per area"),
IOP("mj", MOS3_MOD_MJ, IF_REAL ,"Bottom grading coefficient"),
/***************************************************************************
JSPICE3 adaptation of Spice3f2 - Copyright (c) Stephen R. Whiteley 1992
Copyright 1990 Regents of the University of California. All rights reserved.
Authors: 1985 Thomas L. Quarles
1993 Stephen R. Whiteley
****************************************************************************/
#include "spice.h"
#include <stdio.h>
#include "tradefs.h"
#include "uflags.h"
static IFparm TRApTable[] = { /* parameters */
IOPU( "z0", TRA_Z0, IF_REAL, "Characteristic impedance"),
IOPR( "zo", TRA_Z0, IF_REAL, "Characteristic impedance"),
IOPAU( "f", TRA_FREQ, IF_REAL, "Frequency"),
IOPAU( "td", TRA_TD, IF_REAL, "Transmission delay"),
IOPAU( "nl", TRA_NL, IF_REAL, "Normalized length at frequency given"),
IOPAU( "v1", TRA_V1, IF_REAL, "Initial voltage at end 1"),
IOPAU( "v2", TRA_V2, IF_REAL, "Initial voltage at end 2"),
IOPAU( "i1", TRA_I1, IF_REAL, "Initial current at end 1"),
IOPAU( "i2", TRA_I2, IF_REAL, "Initial current at end 2"),
IP( "ic", TRA_IC, IF_REALVEC,"Initial condition vector:v1,i1,v2,i2"),
OP( "rel", TRA_RELTOL,IF_REAL, "Rel. rate of change of deriv. for bkpt"),
OP( "abs", TRA_ABSTOL,IF_REAL, "Abs. rate of change of deriv. for bkpt"),
OPU( "pos_node1", TRA_POS_NODE1, IF_INTEGER,
"Positive node of end 1 of t. line"),
OPU( "neg_node1", TRA_NEG_NODE1, IF_INTEGER,
"Negative node of end 1 of t. line"),
OPU( "pos_node2", TRA_POS_NODE2, IF_INTEGER,
OP("ggs", JFET2_GGS, IF_REAL, "Conductance G-S"),
OP("ggd", JFET2_GGD, IF_REAL, "Conductance G-D"),
OPU("qgs", JFET2_QGS, IF_REAL, "Charge storage G-S junction"),
OPU("qgd", JFET2_QGD, IF_REAL, "Charge storage G-D junction"),
OPU("cqgs", JFET2_CQGS, IF_REAL, "Capacitance due to charge storage G-S junction"),
OPU("cqgd", JFET2_CQGD, IF_REAL, "Capacitance due to charge storage G-D junction"),
OPU("p", JFET2_POWER,IF_REAL, "Power dissipated by the JFET2"),
OPU("vtrap",JFET2_VTRAP,IF_REAL, "Quiescent drain feedback potential"),
OPU("vpave",JFET2_PAVE, IF_REAL, "Quiescent power dissipation"),
};
IFparm JFET2mPTable[] = { /* model parameters */
OP("type", JFET2_MOD_TYPE, IF_STRING, "N-type or P-type JFET2 model"),
IOP("njf", JFET2_MOD_NJF, IF_FLAG,"N type JFET2 model"),
IOP("pjf", JFET2_MOD_PJF, IF_FLAG,"P type JFET2 model"),
IOPR("vt0", JFET2_MOD_VTO, IF_REAL,"Threshold voltage"),
IOPR("vbi", JFET2_MOD_PB, IF_REAL,"Gate junction potential"),
#define PARAM(code,id,flag,ref,default,descrip) IOP(code,id,IF_REAL,descrip),
#define PARAMA(code,id,flag,ref,default,descrip) IOPA(code,id,IF_REAL,descrip),
#include "jfet2parm.h"
OPU("gd", JFET2_MOD_DRAINCONDUCT, IF_REAL,"Drain conductance"),
OPU("gs", JFET2_MOD_SOURCECONDUCT,IF_REAL,"Source conductance"),
IOPU("tnom", JFET2_MOD_TNOM, IF_REAL,"parameter measurement temperature"),
};
char *JFET2names[] = {
"Drain",
"Gate",
"Source"
OP("gm", HFETA_GM, IF_REAL,"Transconductance"),
OP("gds", HFETA_GDS, IF_REAL,"Drain-Source conductance"),
OP("ggs", HFETA_GGS, IF_REAL,"Gate-Source conductance"),
OP("ggd", HFETA_GGD, IF_REAL,"Gate-Drain conductance"),
OP("qgs", HFETA_QGS, IF_REAL,"Gate-Source charge storage"),
OP("cqgs", HFETA_CQGS, IF_REAL,"Capacitance due to gate-source charge storage"),
OP("qgd", HFETA_QGD, IF_REAL,"Gate-Drain charge storage"),
OP("cqgd", HFETA_CQGD, IF_REAL,"Capacitance due to gate-drain charge storage"),
OP("cs", HFETA_CS, IF_REAL ,"Source current"),
OP("p", HFETA_POWER, IF_REAL ,"Power dissipated by the mesfet")
};
IFparm HFETAmPTable[] = { /* model parameters */
IOP( "vt0", HFETA_MOD_VTO, IF_REAL,"Pinch-off voltage"),
IOPR("vto", HFETA_MOD_VTO, IF_REAL,"Pinch-off voltage"),
IOP( "lambda", HFETA_MOD_LAMBDA, IF_REAL,"Output conductance parameter"),
IOP( "rd", HFETA_MOD_RD, IF_REAL,"Drain ohmic resistance"),
IOP( "rs", HFETA_MOD_RS, IF_REAL,"Source ohmic resistance"),
IOP( "rg", HFETA_MOD_RG, IF_REAL,"Gate ohmic resistance"),
IOP( "rdi", HFETA_MOD_RDI, IF_REAL,"Drain ohmic resistance"),
IOP( "rsi", HFETA_MOD_RSI, IF_REAL,"Source ohmic resistance"),
IOP( "rgs", HFETA_MOD_RGS, IF_REAL,"Gate-source ohmic resistance"),
IOP( "rgd", HFETA_MOD_RGD, IF_REAL,"Gate-drain ohmic resistance"),
IOP( "ri", HFETA_MOD_RI, IF_REAL,""),
IOP( "rf", HFETA_MOD_RF, IF_REAL,""),
IOP( "eta", HFETA_MOD_ETA, IF_REAL,"Subthreshold ideality factor"),
IOP( "m", HFETA_MOD_M, IF_REAL,"Knee shape parameter"),
IOP( "mc", HFETA_MOD_MC, IF_REAL,"Knee shape parameter"),
IOP( "gamma", HFETA_MOD_GAMMA, IF_REAL,"Knee shape parameter"),
IOP( "sigma0", HFETA_MOD_SIGMA0, IF_REAL,"Threshold voltage coefficient"),
OPR( "voltage", DIO_VOLTAGE,IF_REAL, "Diode voltage"),
OPU( "charge", DIO_CHARGE, IF_REAL, "Diode capacitor charge"),
OPU( "capcur", DIO_CAPCUR, IF_REAL, "Diode capacitor current"),
OP( "gd", DIO_CONDUCT,IF_REAL, "Diode conductance"),
OPU( "p", DIO_POWER, IF_REAL, "Diode power"),
IOPU( "temp", DIO_TEMP, IF_REAL, "Instance temperature"),
OP( "cd", DIO_CAP, IF_REAL, "Diode capacitance")
};
static IFparm DIOmPTable[] = { /* model parameters */
IOP( "is", DIO_MOD_IS, IF_REAL, "Saturation current"),
IOP( "rs", DIO_MOD_RS, IF_REAL, "Ohmic resistance"),
IOP( "n", DIO_MOD_N, IF_REAL, "Emission Coefficient"),
IOPA("tt", DIO_MOD_TT, IF_REAL, "Transit Time"),
IOPA("cjo", DIO_MOD_CJO, IF_REAL, "Junction capacitance"),
IOPR("cj0", DIO_MOD_CJO, IF_REAL, "Junction capacitance"),
IOP( "vj", DIO_MOD_VJ, IF_REAL, "Junction potential"),
IOP( "m", DIO_MOD_M, IF_REAL, "Grading coefficient"),
IOP( "eg", DIO_MOD_EG, IF_REAL, "Activation energy"),
IOP( "xti", DIO_MOD_XTI, IF_REAL, "Saturation current temperature exp."),
IOP( "fc", DIO_MOD_FC, IF_REAL, "Forward bias junction fit parameter"),
IOP( "bv", DIO_MOD_BV, IF_REAL, "Reverse breakdown voltage"),
IOP( "ibv", DIO_MOD_IBV, IF_REAL, "Current at reverse breakdown voltage"),
OPU( "cond",DIO_MOD_COND,IF_REAL, "Ohmic conductance"),
IP( "d", DIO_MOD_D, IF_FLAG, "Diode model"),
IOPU("tnom",DIO_MOD_TNOM,IF_REAL, "Parameter measurement temperature"),
IP( "kf", DIO_MOD_KF, IF_REAL, "flicker noise coefficient"),
IP( "af", DIO_MOD_AF, IF_REAL, "flicker noise exponent")
};
static char *DIOnames[] = {
