void flash_erase(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) {
// check there is something to write
if (num_word32 == 0) {
return;
}
// unlock
HAL_FLASH_Unlock();
// Clear pending flags (if any)
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
// erase the sector(s)
FLASH_EraseInitTypeDef EraseInitStruct;
EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V
EraseInitStruct.Sector = flash_get_sector_info(flash_dest, NULL, NULL);
EraseInitStruct.NbSectors = flash_get_sector_info(flash_dest + 4 * num_word32 - 1, NULL, NULL) - EraseInitStruct.Sector + 1;
uint32_t SectorError = 0;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SectorError) != HAL_OK) {
// error occurred during sector erase
HAL_FLASH_Lock(); // lock the flash
return;
}
}
void flash_write(uint32_t f_dst, const uint32_t *src, uint32_t n_words) {
uint8_t e;
uint32_t Start = flash_get_sector_info(f_dst, NULL, NULL);
uint32_t End = flash_get_sector_info(f_dst + (n_words - 1) * 4, NULL, NULL);
__disable_irq();
e = Chip_IAP_PreSectorForReadWrite(Start, End, BANK);
F_ASSERT(e != IAP_CMD_SUCCESS, "Prepare for erase FAIL");
DBG("Write Prepare ok %d:%d:%08X:%08Xx%d\n", Start, End, f_dst, src, n_words);
e = Chip_IAP_CopyRamToFlash(f_dst, (uint32_t*) src, n_words * 4);
F_ASSERT(e != IAP_CMD_SUCCESS, "Write FAIL");
DBG("Write ok %d:%d:%08X:%08Xx%d\n", Start, End, f_dst, src, n_words);
e = Chip_IAP_Compare(f_dst, (uint32_t) src, n_words * 4);
F_ASSERT(e != IAP_CMD_SUCCESS, "Verify FAIL");
DBG("Write Check ok %d:%d:%08X:%08Xx%d\n", Start, End, f_dst, src, n_words);
__enable_irq();
}
static uint8_t *flash_cache_get_addr_for_read(uint32_t flash_addr) {
uint32_t flash_sector_start;
uint32_t flash_sector_size;
uint32_t flash_sector_id = flash_get_sector_info(flash_addr, &flash_sector_start, &flash_sector_size);
if (flash_cache_sector_id == flash_sector_id) {
// in cache, copy from there
return (uint8_t*)CACHE_MEM_START_ADDR + flash_addr - flash_sector_start;
}
// not in cache, copy straight from flash
return (uint8_t*)flash_addr;
}
void flash_erase(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) {
// check there is something to write
if (num_word32 == 0) {
return;
}
// unlock
HAL_FLASH_Unlock();
FLASH_EraseInitTypeDef EraseInitStruct;
#if defined(MCU_SERIES_L4)
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_ALL_ERRORS);
// erase the sector(s)
// The sector returned by flash_get_sector_info can not be used
// as the flash has on each bank 0/1 pages 0..255
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.Banks = get_bank(flash_dest);
EraseInitStruct.Page = get_page(flash_dest);
EraseInitStruct.NbPages = get_page(flash_dest + 4 * num_word32 - 1) - EraseInitStruct.Page + 1;;
#else
// Clear pending flags (if any)
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
// erase the sector(s)
EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V
EraseInitStruct.Sector = flash_get_sector_info(flash_dest, NULL, NULL);
EraseInitStruct.NbSectors = flash_get_sector_info(flash_dest + 4 * num_word32 - 1, NULL, NULL) - EraseInitStruct.Sector + 1;
#endif
uint32_t SectorError = 0;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SectorError) != HAL_OK) {
// error occurred during sector erase
HAL_FLASH_Lock(); // lock the flash
return;
}
}
void flash_erase(uint32_t f_dst, const uint32_t *src, uint32_t n_words) {
uint8_t e;
// check there is something to write
if (n_words == 0) {
return;
}
__disable_irq();
// erase the sector(s)
uint32_t Start = flash_get_sector_info(f_dst, NULL, NULL);
uint32_t End = flash_get_sector_info(f_dst + 4 * n_words - 1, NULL, NULL);
e = Chip_IAP_PreSectorForReadWrite(Start, End, BANK);
F_ASSERT(e != IAP_CMD_SUCCESS, "Prepare for erase FAIL");
DBG("ERASE Prepare ok %d:%d\n", Start, End);
e = Chip_IAP_EraseSector(Start, End, BANK);
F_ASSERT(e != IAP_CMD_SUCCESS, "Erase FAIL");
DBG("ERASE Operation ok %d:%d\n", Start, End);
e = Chip_IAP_BlankCheckSector(Start, End, BANK);
F_ASSERT(e != IAP_CMD_SUCCESS, "Blank check FAIL");
DBG("ERASE Check ok %d:%d\n", Start, End);
__enable_irq();
}
static uint8_t *flash_cache_get_addr_for_write(uint32_t flash_addr) {
uint32_t flash_sector_start;
uint32_t flash_sector_size;
uint32_t flash_sector_id = flash_get_sector_info(flash_addr, &flash_sector_start, &flash_sector_size);
if (flash_cache_sector_id != flash_sector_id) {
flash_cache_flush();
memcpy((void*)CACHE_MEM_START_ADDR, (const void*)flash_sector_start, flash_sector_size);
flash_cache_sector_id = flash_sector_id;
flash_cache_sector_start = flash_sector_start;
flash_cache_sector_size = flash_sector_size;
}
flash_flags |= FLASH_FLAG_DIRTY;
led_state(PYB_LED_STORAGE1, 1); // indicate a dirty cache with LED on
flash_tick_counter_last_write = HAL_GetTick();
return (uint8_t*)CACHE_MEM_START_ADDR + flash_addr - flash_sector_start;
}
static uint8_t *flash_cache_get_addr_for_write(uint32_t flash_addr) {
uint32_t flash_sector_start;
uint32_t flash_sector_size;
uint32_t flash_sector_id = flash_get_sector_info(flash_addr, &flash_sector_start, &flash_sector_size);
if (flash_sector_size > FLASH_SECTOR_SIZE_MAX) {
flash_sector_size = FLASH_SECTOR_SIZE_MAX;
}
if (flash_cache_sector_id != flash_sector_id) {
flash_bdev_ioctl(BDEV_IOCTL_SYNC, 0);
memcpy((void*)CACHE_MEM_START_ADDR, (const void*)flash_sector_start, flash_sector_size);
flash_cache_sector_id = flash_sector_id;
flash_cache_sector_start = flash_sector_start;
flash_cache_sector_size = flash_sector_size;
}
flash_flags |= FLASH_FLAG_DIRTY;
led_state(PYB_LED_RED, 1); // indicate a dirty cache with LED on
flash_tick_counter_last_write = HAL_GetTick();
return (uint8_t*)CACHE_MEM_START_ADDR + flash_addr - flash_sector_start;
}
// get the bank of a given flash address
static uint32_t get_bank(uint32_t addr) {
#if defined(STM32H7)
if (READ_BIT(FLASH->OPTCR, FLASH_OPTCR_SWAP_BANK) == 0) {
#else
if (READ_BIT(SYSCFG->MEMRMP, SYSCFG_MEMRMP_FB_MODE) == 0) {
#endif
// no bank swap
if (addr < (FLASH_BASE + FLASH_BANK_SIZE)) {
return FLASH_BANK_1;
} else {
return FLASH_BANK_2;
}
} else {
// bank swap
if (addr < (FLASH_BASE + FLASH_BANK_SIZE)) {
return FLASH_BANK_2;
} else {
return FLASH_BANK_1;
}
}
}
#if (defined(STM32L4) && defined(SYSCFG_MEMRMP_FB_MODE))
// get the page of a given flash address
static uint32_t get_page(uint32_t addr) {
if (addr < (FLASH_BASE + FLASH_BANK_SIZE)) {
// bank 1
return (addr - FLASH_BASE) / FLASH_PAGE_SIZE;
} else {
// bank 2
return (addr - (FLASH_BASE + FLASH_BANK_SIZE)) / FLASH_PAGE_SIZE;
}
}
#endif
#elif defined(STM32L4) && !defined(SYSCFG_MEMRMP_FB_MODE)
static uint32_t get_page(uint32_t addr) {
return (addr - FLASH_BASE) / FLASH_PAGE_SIZE;
}
#endif
uint32_t flash_get_sector_info(uint32_t addr, uint32_t *start_addr, uint32_t *size) {
if (addr >= flash_layout[0].base_address) {
uint32_t sector_index = 0;
for (int i = 0; i < MP_ARRAY_SIZE(flash_layout); ++i) {
for (int j = 0; j < flash_layout[i].sector_count; ++j) {
uint32_t sector_start_next = flash_layout[i].base_address
+ (j + 1) * flash_layout[i].sector_size;
if (addr < sector_start_next) {
if (start_addr != NULL) {
*start_addr = flash_layout[i].base_address
+ j * flash_layout[i].sector_size;
}
if (size != NULL) {
*size = flash_layout[i].sector_size;
}
return sector_index;
}
++sector_index;
}
}
}
return 0;
}
void flash_erase(uint32_t flash_dest, uint32_t num_word32) {
// check there is something to write
if (num_word32 == 0) {
return;
}
// unlock
HAL_FLASH_Unlock();
FLASH_EraseInitTypeDef EraseInitStruct;
#if defined(STM32F0)
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_WRPERR | FLASH_FLAG_PGERR);
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.PageAddress = flash_dest;
EraseInitStruct.NbPages = (4 * num_word32 + FLASH_PAGE_SIZE - 4) / FLASH_PAGE_SIZE;
#elif (defined(STM32L4) && !defined(SYSCFG_MEMRMP_FB_MODE))
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_ALL_ERRORS);
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.Page = get_page(flash_dest);
EraseInitStruct.NbPages = (4 * num_word32 + FLASH_PAGE_SIZE - 4) / FLASH_PAGE_SIZE;
#elif defined(STM32L4)
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_ALL_ERRORS);
// erase the sector(s)
// The sector returned by flash_get_sector_info can not be used
// as the flash has on each bank 0/1 pages 0..255
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.Banks = get_bank(flash_dest);
EraseInitStruct.Page = get_page(flash_dest);
EraseInitStruct.NbPages = get_page(flash_dest + 4 * num_word32 - 1) - EraseInitStruct.Page + 1;;
#else
// Clear pending flags (if any)
#if defined(STM32H7)
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_ALL_ERRORS_BANK1 | FLASH_FLAG_ALL_ERRORS_BANK2);
#else
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
#endif
// erase the sector(s)
EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V
#if defined(STM32H7)
EraseInitStruct.Banks = get_bank(flash_dest);
#endif
EraseInitStruct.Sector = flash_get_sector_info(flash_dest, NULL, NULL);
EraseInitStruct.NbSectors = flash_get_sector_info(flash_dest + 4 * num_word32 - 1, NULL, NULL) - EraseInitStruct.Sector + 1;
#endif
uint32_t SectorError = 0;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SectorError) != HAL_OK) {
// error occurred during sector erase
HAL_FLASH_Lock(); // lock the flash
return;
}
}
/*
// erase the sector using an interrupt
void flash_erase_it(uint32_t flash_dest, uint32_t num_word32) {
// check there is something to write
if (num_word32 == 0) {
return;
}
// unlock
HAL_FLASH_Unlock();
// Clear pending flags (if any)
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
// erase the sector(s)
FLASH_EraseInitTypeDef EraseInitStruct;
EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V
EraseInitStruct.Sector = flash_get_sector_info(flash_dest, NULL, NULL);
EraseInitStruct.NbSectors = flash_get_sector_info(flash_dest + 4 * num_word32 - 1, NULL, NULL) - EraseInitStruct.Sector + 1;
if (HAL_FLASHEx_Erase_IT(&EraseInitStruct) != HAL_OK) {
// error occurred during sector erase
HAL_FLASH_Lock(); // lock the flash
return;
}
}
*/
void flash_write(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) {
#if defined(STM32L4)
// program the flash uint64 by uint64
for (int i = 0; i < num_word32 / 2; i++) {
uint64_t val = *(uint64_t*)src;
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, flash_dest, val) != HAL_OK) {
// error occurred during flash write
HAL_FLASH_Lock(); // lock the flash
return;
}
flash_dest += 8;
src += 2;
}
if ((num_word32 & 0x01) == 1) {
uint64_t val = *(uint64_t*)flash_dest;
val = (val & 0xffffffff00000000uL) | (*src);
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, flash_dest, val) != HAL_OK) {
// error occurred during flash write
HAL_FLASH_Lock(); // lock the flash
return;
}
}
#elif defined(STM32H7)
// program the flash 256 bits at a time
for (int i = 0; i < num_word32 / 8; i++) {
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD, flash_dest, (uint64_t)(uint32_t)src) != HAL_OK) {
// error occurred during flash write
HAL_FLASH_Lock(); // lock the flash
return;
}
flash_dest += 32;
src += 8;
}
#else
// program the flash word by word
for (int i = 0; i < num_word32; i++) {
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, flash_dest, *src) != HAL_OK) {
// error occurred during flash write
HAL_FLASH_Lock(); // lock the flash
return;
}
flash_dest += 4;
src += 1;
}
#endif
// lock the flash
HAL_FLASH_Lock();
}
