/* Partition flash routine. This function can be used to setup
* the flash for enhanced EEPROM operation. In order to guarantee
* the eEE endurance the partition command should only be used one
* time (re-partitioning in a different configuration will erase
* wear-leveling data, so endurance can no longer be guaranteed).
* This function will test to make sure the flash has not been
* partitioned already.
*
* Parameters:
* eeprom_size size of the two EEPROM data sets (A and B) defines in flexmem_demo.h
* dlfash_size amount of dflash memory available after partitioning defines in flexmem_demo.h
*
* Returns:
* 1 partitioning completed successfully
* 0 partitioning not completed (device is already partitioned)
*/
int partition_flash(int eeprom_size, int dflash_size)
{
/* Test to make sure the device is not already partitioned. If it
* is already partitioned, then return with no action performed.
*/
if ((SIM_FCFG1 & SIM_FCFG1_DEPART(0xF)) != 0x00000F00)
{
printf("\nDevice is already partitioned.\n");
return 0;
}
/* Write the FCCOB registers */
FTFL_FCCOB0 = FTFL_FCCOB0_CCOBn(0x80); // Selects the PGMPART command
FTFL_FCCOB1 = 0x00;
FTFL_FCCOB2 = 0x00;
FTFL_FCCOB3 = 0x00;
/* FCCOB4 is written with the code for the subsystem sizes (eeprom_size define) */
FTFL_FCCOB4 = eeprom_size;
/* FFCOB5 is written with the code for the Dflash size (dflash_size define) */
FTFL_FCCOB5 = dflash_size;
/* All required FCCOBx registers are written, so launch the command */
FTFL_FSTAT = FTFL_FSTAT_CCIF_MASK;
/* Wait for the command to complete */
while(!(FTFL_FSTAT & FTFL_FSTAT_CCIF_MASK));
return 1;
}
U8 Flash_Erase(U16 num){
union{
U32 Word;
U8 Byte[4];
}FlashDestination;
FlashDestination.Word=ADDR+num*SECTOR_SIZE;
FTFL->FCCOB0=FTFL_FCCOB0_CCOBn(ERSSCR);
FTFL->FCCOB1=FlashDestination.Byte[2];
FTFL->FCCOB2=FlashDestination.Byte[1];
FTFL->FCCOB3=FlashDestination.Byte[0];
if(FlashCMD()==1){return 1;}//Error
return 0;//Success
}
