/**
* @brief Perform a mass erase or erase the specified FLASH memory pages with interrupt enabled
* @note To correctly run this function, the @ref HAL_FLASH_Unlock() function
* must be called before.
* Call the @ref HAL_FLASH_Lock() to disable the flash memory access
* (recommended to protect the FLASH memory against possible unwanted operation)
* @param pEraseInit pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @retval HAL_StatusTypeDef HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit)
{
HAL_StatusTypeDef status = HAL_OK;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* If procedure already ongoing, reject the next one */
if (pFlash.ProcedureOnGoing != FLASH_PROC_NONE)
{
return HAL_ERROR;
}
/* Check the parameters */
assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
/* Enable End of FLASH Operation and Error source interrupts */
__HAL_FLASH_ENABLE_IT(FLASH_IT_EOP | FLASH_IT_ERR);
#if defined(FLASH_BANK2_END)
/* Enable End of FLASH Operation and Error source interrupts */
__HAL_FLASH_ENABLE_IT(FLASH_IT_EOP_BANK2 | FLASH_IT_ERR_BANK2);
#endif
if (pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
{
/*Mass erase to be done*/
pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE;
FLASH_MassErase(pEraseInit->Banks);
}
else
{
/* Erase by page to be done*/
/* Check the parameters */
assert_param(IS_FLASH_PROGRAM_ADDRESS(pEraseInit->PageAddress));
assert_param(IS_FLASH_NB_PAGES(pEraseInit->PageAddress, pEraseInit->NbPages));
pFlash.ProcedureOnGoing = FLASH_PROC_PAGEERASE;
pFlash.DataRemaining = pEraseInit->NbPages;
pFlash.Address = pEraseInit->PageAddress;
/*Erase 1st page and wait for IT*/
FLASH_PageErase(pEraseInit->PageAddress);
}
return status;
}
/**
* @brief Perform a mass erase or erase the specified FLASH memory sectors with interrupt enabled
* @param pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @retval HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit)
{
HAL_StatusTypeDef status = HAL_OK;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
/* Enable End of FLASH Operation interrupt */
__HAL_FLASH_ENABLE_IT(FLASH_IT_EOP);
/* Enable Error source interrupt */
__HAL_FLASH_ENABLE_IT(FLASH_IT_ERR);
/* Clear pending flags (if any) */
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |\
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR| FLASH_FLAG_PGSERR);
if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
{
/*Mass erase to be done*/
pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE;
pFlash.Bank = pEraseInit->Banks;
FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);
}
else
{
/* Erase by sector to be done*/
/* Check the parameters */
assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE;
pFlash.NbSectorsToErase = pEraseInit->NbSectors;
pFlash.Sector = pEraseInit->Sector;
pFlash.VoltageForErase = (uint8_t)pEraseInit->VoltageRange;
/*Erase 1st sector and wait for IT*/
FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->VoltageRange);
}
return status;
}
/**
* @brief Perform a mass erase or erase the specified FLASH memory pages
* @note To correctly run this function, the @ref HAL_FLASH_Unlock() function
* must be called before.
* Call the @ref HAL_FLASH_Lock() to disable the flash memory access
* (recommended to protect the FLASH memory against possible unwanted operation)
* @param[in] pEraseInit pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @param[out] PageError pointer to variable that
* contains the configuration information on faulty page in case of error
* (0xFFFFFFFF means that all the pages have been correctly erased)
*
* @retval HAL_StatusTypeDef HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *PageError)
{
HAL_StatusTypeDef status = HAL_ERROR;
uint32_t address = 0;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
if (pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
{
#if defined(FLASH_BANK2_END)
if (pEraseInit->Banks == FLASH_BANK_BOTH)
{
/* Mass Erase requested for Bank1 and Bank2 */
/* Wait for last operation to be completed */
if ((FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE) == HAL_OK) && \
(FLASH_WaitForLastOperationBank2((uint32_t)FLASH_TIMEOUT_VALUE) == HAL_OK))
{
/*Mass erase to be done*/
FLASH_MassErase(FLASH_BANK_BOTH);
/* Wait for last operation to be completed */
if ((FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE) == HAL_OK) && \
(FLASH_WaitForLastOperationBank2((uint32_t)FLASH_TIMEOUT_VALUE) == HAL_OK))
{
status = HAL_OK;
}
/* If the erase operation is completed, disable the MER Bit */
CLEAR_BIT(FLASH->CR, FLASH_CR_MER);
CLEAR_BIT(FLASH->CR2, FLASH_CR2_MER);
}
}
else if (pEraseInit->Banks == FLASH_BANK_2)
{
/* Mass Erase requested for Bank2 */
/* Wait for last operation to be completed */
if (FLASH_WaitForLastOperationBank2((uint32_t)FLASH_TIMEOUT_VALUE) == HAL_OK)
{
/*Mass erase to be done*/
FLASH_MassErase(FLASH_BANK_2);
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperationBank2((uint32_t)FLASH_TIMEOUT_VALUE);
/* If the erase operation is completed, disable the MER Bit */
CLEAR_BIT(FLASH->CR2, FLASH_CR2_MER);
}
}
else
#endif /* FLASH_BANK2_END */
{
/* Mass Erase requested for Bank1 */
/* Wait for last operation to be completed */
if (FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE) == HAL_OK)
{
/*Mass erase to be done*/
FLASH_MassErase(FLASH_BANK_1);
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
/* If the erase operation is completed, disable the MER Bit */
CLEAR_BIT(FLASH->CR, FLASH_CR_MER);
}
}
}
else
{
/* Page Erase is requested */
/* Check the parameters */
assert_param(IS_FLASH_PROGRAM_ADDRESS(pEraseInit->PageAddress));
assert_param(IS_FLASH_NB_PAGES(pEraseInit->PageAddress, pEraseInit->NbPages));
#if defined(FLASH_BANK2_END)
/* Page Erase requested on address located on bank2 */
if(pEraseInit->PageAddress > FLASH_BANK1_END)
{
/* Wait for last operation to be completed */
if (FLASH_WaitForLastOperationBank2((uint32_t)FLASH_TIMEOUT_VALUE) == HAL_OK)
{
/*Initialization of PageError variable*/
*PageError = 0xFFFFFFFF;
/* Erase by page by page to be done*/
for(address = pEraseInit->PageAddress;
address < (pEraseInit->PageAddress + (pEraseInit->NbPages)*FLASH_PAGE_SIZE);
address += FLASH_PAGE_SIZE)
{
FLASH_PageErase(address);
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperationBank2((uint32_t)FLASH_TIMEOUT_VALUE);
/* If the erase operation is completed, disable the PER Bit */
CLEAR_BIT(FLASH->CR2, FLASH_CR2_PER);
if (status != HAL_OK)
{
/* In case of error, stop erase procedure and return the faulty address */
*PageError = address;
break;
}
}
}
}
else
#endif /* FLASH_BANK2_END */
{
/* Page Erase requested on address located on bank1 */
/* Wait for last operation to be completed */
if (FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE) == HAL_OK)
{
/*Initialization of PageError variable*/
*PageError = 0xFFFFFFFF;
/* Erase page by page to be done*/
for(address = pEraseInit->PageAddress;
address < ((pEraseInit->NbPages * FLASH_PAGE_SIZE) + pEraseInit->PageAddress);
address += FLASH_PAGE_SIZE)
{
FLASH_PageErase(address);
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
/* If the erase operation is completed, disable the PER Bit */
CLEAR_BIT(FLASH->CR, FLASH_CR_PER);
if (status != HAL_OK)
{
/* In case of error, stop erase procedure and return the faulty address */
*PageError = address;
break;
}
}
}
}
}
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
/**
* @brief Perform a mass erase or erase the specified FLASH memory sectors with interrupt enabled
* @param pEraseInit pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @retval HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit)
{
HAL_StatusTypeDef status = HAL_OK;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
assert_param(IS_VOLTAGERANGE(pEraseInit->VoltageRange));
assert_param(IS_FLASH_BANK(pEraseInit->Banks));
if((pEraseInit->Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
/* Clear bank 1 pending flags (if any) */
__HAL_FLASH_CLEAR_FLAG_BANK1(FLASH_FLAG_EOP_BANK1 | FLASH_FLAG_ALL_ERRORS_BANK1);
/* Enable End of Operation and Error interrupts for Bank 1 */
__HAL_FLASH_ENABLE_IT_BANK1(FLASH_IT_EOP_BANK1 | FLASH_IT_WRPERR_BANK1 | FLASH_IT_PGSERR_BANK1 | \
FLASH_IT_STRBERR_BANK1 | FLASH_IT_INCERR_BANK1 | FLASH_IT_OPERR_BANK1);
}
if((pEraseInit->Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
/* Clear bank 2 pending flags (if any) */
__HAL_FLASH_CLEAR_FLAG_BANK2(FLASH_FLAG_EOP_BANK2 | FLASH_FLAG_ALL_ERRORS_BANK2);
/* Enable End of Operation and Error interrupts for Bank 2 */
__HAL_FLASH_ENABLE_IT_BANK2(FLASH_IT_EOP_BANK2 | FLASH_IT_WRPERR_BANK2 | FLASH_IT_PGSERR_BANK2 | \
FLASH_IT_STRBERR_BANK2 | FLASH_IT_INCERR_BANK2 | FLASH_IT_OPERR_BANK2);
}
if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
{
/*Mass erase to be done*/
if(pEraseInit->Banks == FLASH_BANK_1)
{
pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE_BANK1;
}
else if(pEraseInit->Banks == FLASH_BANK_2)
{
pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE_BANK2;
}
else
{
pFlash.ProcedureOnGoing = FLASH_PROC_ALLBANK_MASSERASE;
}
FLASH_MassErase(pEraseInit->VoltageRange, pEraseInit->Banks);
}
else
{
/* Erase by sector to be done*/
/* Check the parameters */
assert_param(IS_FLASH_BANK_EXCLUSIVE(pEraseInit->Banks));
assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
if(pEraseInit->Banks == FLASH_BANK_1)
{
pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE_BANK1;
}
else
{
pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE_BANK2;
}
pFlash.NbSectorsToErase = pEraseInit->NbSectors;
pFlash.Sector = pEraseInit->Sector;
pFlash.VoltageForErase = pEraseInit->VoltageRange;
/*Erase 1st sector and wait for IT*/
FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->Banks, pEraseInit->VoltageRange);
}
return status;
}
/**
* @brief Perform a mass erase or erase the specified FLASH memory sectors
* @param[in] pEraseInit pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @param[out] SectorError pointer to variable that
* contains the configuration information on faulty sector in case of error
* (0xFFFFFFFF means that all the sectors have been correctly erased)
*
* @retval HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError)
{
HAL_StatusTypeDef status = HAL_OK;
uint32_t index = 0;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
assert_param(IS_VOLTAGERANGE(pEraseInit->VoltageRange));
assert_param(IS_FLASH_BANK(pEraseInit->Banks));
/* Wait for last operation to be completed */
if((pEraseInit->Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_1);
}
if((pEraseInit->Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
status |= FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_2);
}
if(status == HAL_OK)
{
/*Initialization of SectorError variable*/
*SectorError = 0xFFFFFFFF;
if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
{
/*Mass erase to be done*/
FLASH_MassErase(pEraseInit->VoltageRange, pEraseInit->Banks);
/* Wait for last operation to be completed */
if((pEraseInit->Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_1);
/* if the erase operation is completed, disable the Bank1 BER Bit */
FLASH->CR1 &= (~FLASH_CR_BER);
}
if((pEraseInit->Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
status |= FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_2);
/* if the erase operation is completed, disable the Bank2 BER Bit */
FLASH->CR2 &= (~FLASH_CR_BER);
}
}
else
{
/* Check the parameters */
assert_param(IS_FLASH_BANK_EXCLUSIVE(pEraseInit->Banks));
assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
/* Erase by sector by sector to be done*/
for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++)
{
FLASH_Erase_Sector(index, pEraseInit->Banks, pEraseInit->VoltageRange);
if((pEraseInit->Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_1);
/* If the erase operation is completed, disable the SER Bit */
FLASH->CR1 &= (~(FLASH_CR_SER | FLASH_CR_SNB));
}
if((pEraseInit->Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_2);
/* If the erase operation is completed, disable the SER Bit */
FLASH->CR2 &= (~(FLASH_CR_SER | FLASH_CR_SNB));
}
if(status != HAL_OK)
{
/* In case of error, stop erase procedure and return the faulty sector*/
*SectorError = index;
break;
}
}
}
}
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
/**
* @brief Perform a mass erase or erase the specified FLASH memory sectors
* @param[in] pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @param[out] SectorError: pointer to variable that
* contains the configuration information on faulty sector in case of error
* (0xFFFFFFFF means that all the sectors have been correctly erased)
*
* @retval HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError)
{
HAL_StatusTypeDef status = HAL_ERROR;
uint32_t index = 0;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
/*Initialization of SectorError variable*/
*SectorError = 0xFFFFFFFF;
if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
{
/*Mass erase to be done*/
FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
/* if the erase operation is completed, disable the MER Bit */
FLASH->CR &= (~FLASH_MER_BIT);
}
else
{
/* Check the parameters */
assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
/* Erase by sector by sector to be done*/
for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++)
{
FLASH_Erase_Sector(index, (uint8_t) pEraseInit->VoltageRange);
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
/* If the erase operation is completed, disable the SER and SNB Bits */
CLEAR_BIT(FLASH->CR, (FLASH_CR_SER | FLASH_CR_SNB));
if(status != HAL_OK)
{
/* In case of error, stop erase procedure and return the faulty sector*/
*SectorError = index;
break;
}
}
}
/* Flush the caches to be sure of the data consistency */
FLASH_FlushCaches();
}
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}