예제 #1
0
void Flash_eeprom_readwrite_Test(void)
{
    TestStatus OperationStatus;
    u32 add, start_add, stop_add =0;
    u8 WriteBuffer[FLASH_BLOCK_SIZE];
    u8 new_value[FLASH_BLOCK_SIZE] = "This is a Flash_eeprom write and read example......\
This is a Flash_eeprom write and read example....---lingguansheng---2012-2-20";
    u8 block, i=0 ;
    /* Fill the buffer in RAM */
    for (i = 0; i < FLASH_BLOCK_SIZE; i++) WriteBuffer[i] =new_value[i];
        /* Program the block 0*/
    block = 0; /* block 0 is first block of Data memory: address is 0x4000 */
    FLASH_ProgramBlock(block, FLASH_MEMTYPE_DATA, FLASH_PROGRAMMODE_STANDARD, WriteBuffer);
    FLASH_WaitForLastOperation(FLASH_MEMTYPE_DATA);

    /* Check the programmed block */
    start_add = FLASH_DATA_START_PHYSICAL_ADDRESS;
    stop_add = FLASH_DATA_START_PHYSICAL_ADDRESS + (u32)FLASH_BLOCK_SIZE;
    for (add = start_add; add < stop_add; add++)
    {
        if (FLASH_ReadByte(add) != new_value[add-start_add])
        {
            /* Error */
            OperationStatus = FAILED;
            /* OperationStatus = PASSED, if the data written/read to/from DATA EEPROM memory is correct */
            /* OperationStatus = FAILED, if the data written/read to/from DATA EEPROM memory is corrupted */
            while (1);
        }
    }
    
    for (add = start_add; add < stop_add; add++)
    {

          UART1_SendByte(FLASH_ReadByte(add));
          Delay(0xffff);
    }
}
예제 #2
0
/**
  * @brief  Main program.
  * @param  None
  * @retval None
  */
void main(void)
{
  uint32_t add, startadd, stopadd = 0;
  uint8_t newval = 0xAA;
  uint8_t i = 0;

#ifdef _COSMIC_
/* Call the _fctcpy() function with the first segment character as parameter 
   "_fctcpy('F');"  for a manual copy of the declared moveable code segment
   (FLASH_CODE) in RAM before execution*/
  _fctcpy('F');
#endif /*_COSMIC_*/

#ifdef _RAISONANCE_
/* Call the standard C library: memcpy() or fmemcpy() functions available through 
   the <string.h> to copy the inram function to the RAM destination address */
  MEMCPY(FLASH_EraseBlock,
         (void PointerAttr*)&__address__FLASH_EraseBlock,
         (int)&__size__FLASH_EraseBlock);
  MEMCPY(FLASH_ProgramBlock,
         (void PointerAttr*)&__address__FLASH_ProgramBlock,
         (int)&__size__FLASH_ProgramBlock);
#endif /*_RAISONANCE_*/

  /* Initialize I/Os in Output Mode */
  STM_EVAL_LEDInit(LED2);
  STM_EVAL_LEDInit(LED3);
  STM_EVAL_LEDInit(LED4);

  /* High speed internal clock prescaler */
  CLK_SYSCLKDivConfig(CLK_SYSCLKDiv_1);

  /* Define flash programming Time*/
  FLASH_SetProgrammingTime(FLASH_ProgramTime_Standard);

  FLASH_Unlock(FLASH_MemType_Program);
  /* Wait until Flash Program area unlocked flag is set*/
  while (FLASH_GetFlagStatus(FLASH_FLAG_PUL) == RESET)
  {}

  /* Unlock flash data eeprom memory */
  FLASH_Unlock(FLASH_MemType_Data);
  /* Wait until Data EEPROM area unlocked flag is set*/
  while (FLASH_GetFlagStatus(FLASH_FLAG_DUL) == RESET)
  {}

  /* Fill the buffer in RAM */
  for (i = 0; i < FLASH_BLOCK_SIZE; i++)
  {
    GBuffer[i] = newval;
  }
  /* This function is executed from RAM */
  FLASH_ProgramBlock(BLOCK_OPERATION, FLASH_MemType_Data, FLASH_ProgramMode_Standard, GBuffer);
  
  /* Wait until End of high voltage flag is set*/
  while (FLASH_GetFlagStatus(FLASH_FLAG_HVOFF) == RESET)
  {}
  /* Check the programmed block */
  startadd = FLASH_DATA_EEPROM_START_PHYSICAL_ADDRESS + ((uint16_t)BLOCK_OPERATION * (uint16_t)FLASH_BLOCK_SIZE);
  stopadd = startadd + (uint16_t)FLASH_BLOCK_SIZE;
  for (add = startadd; add < stopadd; add++)
      {
        if (FLASH_ReadByte(add) != newval)
        {
          /* Error */
          OperationStatus = FAILED;
          /* OperationStatus = PASSED, if the data written/read to/from Flash program memory is correct */
          /* OperationStatus = FAILED, if the data written/read to/from Flash program memory is corrupted */
          while (1)
          {
            STM_EVAL_LEDToggle(LED1); /*FAIL: write error */
            
            Delay(0xFFFF);
          }
        }
      }
  /* Erase block 0 and verify it */
  /* This function is executed from RAM */
  FLASH_EraseBlock(BLOCK_OPERATION, FLASH_MemType_Data);

  /* Wait until End of high voltage flag is set*/
  while (FLASH_GetFlagStatus(FLASH_FLAG_HVOFF) == RESET)
  {}

  for (add = startadd; add < stopadd; add++)
      {
        if (FLASH_ReadByte(add) != 0x00)
        {
          /* Error */
          OperationStatus = FAILED;
          /* OperationStatus = PASSED, if the data written/read to/from Flash program memory is correct */
          /* OperationStatus = FAILED, if the data written/read to/from Flash program memory is corrupted */
          while (1)
          {
            STM_EVAL_LEDToggle(LED2); /* FAIL: Erase error */
            
           Delay(0xFFFF);
          }
        }
      }

  /* Pass */
  OperationStatus = PASSED;
  /* OperationStatus = PASSED, if the data written/read to/from Flash program memory is correct */
  /* OperationStatus = FAILED, if the data written/read to/from Flash program memory is corrupted */
  while (1)
  {
    STM_EVAL_LEDToggle(LED3); /* PASS: without errors*/
    
    Delay(0xFFFF);
  }
}