/**
* @brief Erases all FLASH Sectors.
*
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
*
* @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM,
* FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE.
*/
FLASH_Status FLASH_EraseAllSectors(uint8_t VoltageRange)
{
uint32_t tmp_psize = 0x0;
FLASH_Status status = FLASH_COMPLETE;
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation();
assert_param(IS_VOLTAGERANGE(VoltageRange));
if(VoltageRange == VoltageRange_1)
{
tmp_psize = FLASH_PSIZE_BYTE;
}
else if(VoltageRange == VoltageRange_2)
{
tmp_psize = FLASH_PSIZE_HALF_WORD;
}
else if(VoltageRange == VoltageRange_3)
{
tmp_psize = FLASH_PSIZE_WORD;
}
else
{
tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
}
if(status == FLASH_COMPLETE)
{
/* if the previous operation is completed, proceed to erase all sectors */
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= tmp_psize;
FLASH->CR |= FLASH_CR_MER;
FLASH->CR |= FLASH_CR_STRT;
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation();
/* if the erase operation is completed, disable the MER Bit */
FLASH->CR &= (~FLASH_CR_MER);
}
/* Return the Erase Status */
return status;
}
/**
* @brief Full erase of FLASH memory sectors
* @param VoltageRange The device program/erase parallelism.
* This parameter can be one of the following values:
* @arg FLASH_VOLTAGE_RANGE_1 : Flash program/erase by 8 bits
* @arg FLASH_VOLTAGE_RANGE_2 : Flash program/erase by 16 bits
* @arg FLASH_VOLTAGE_RANGE_3 : Flash program/erase by 32 bits
* @arg FLASH_VOLTAGE_RANGE_4 : Flash program/erase by 64 bits
*
* @param Banks Banks to be erased
* This parameter can be one of the following values:
* @arg FLASH_BANK_1: Bank1 to be erased
* @arg FLASH_BANK_2: Bank2 to be erased
* @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased
*
* @retval HAL Status
*/
static void FLASH_MassErase(uint32_t VoltageRange, uint32_t Banks)
{
/* Check the parameters */
assert_param(IS_FLASH_BANK(Banks));
assert_param(IS_VOLTAGERANGE(VoltageRange));
/* Flash Mass Erase */
if((Banks & FLASH_BANK_BOTH) == FLASH_BANK_BOTH)
{
/* reset Program/erase VoltageRange for Bank1 */
FLASH->CR1 &= (~FLASH_CR_PSIZE);
/* Bank1 will be erased, and set voltage range*/
FLASH->CR1 |= FLASH_CR_BER | VoltageRange;
FLASH->OPTCR |= FLASH_OPTCR_MER;
}
else
{
/* Proceed to erase Flash Bank */
if((Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
/* reset Program/erase VoltageRange for Bank1 */
FLASH->CR1 &= (~FLASH_CR_PSIZE);
/* Bank1 will be erased, and set voltage range*/
FLASH->CR1 |= FLASH_CR_BER | VoltageRange;
FLASH->CR1 |= FLASH_CR_START;
}
if((Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
/* reset Program/erase VoltageRange for Bank2 */
FLASH->CR2 &= (~FLASH_CR_PSIZE);
/* Bank2 will be erased, and set voltage range*/
FLASH->CR2 |= FLASH_CR_BER | VoltageRange;
FLASH->CR2 |= FLASH_CR_START;
}
}
}
/**
* @brief Erase the specified FLASH memory sector
* @param Sector: FLASH sector to erase
* The value of this parameter depend on device used within the same series
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
*
* @retval None
*/
void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
{
uint32_t tmp_psize = 0;
/* Check the parameters */
assert_param(IS_FLASH_SECTOR(Sector));
assert_param(IS_VOLTAGERANGE(VoltageRange));
if(VoltageRange == FLASH_VOLTAGE_RANGE_1)
{
tmp_psize = FLASH_PSIZE_BYTE;
}
else if(VoltageRange == FLASH_VOLTAGE_RANGE_2)
{
tmp_psize = FLASH_PSIZE_HALF_WORD;
}
else if(VoltageRange == FLASH_VOLTAGE_RANGE_3)
{
tmp_psize = FLASH_PSIZE_WORD;
}
else
{
tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
}
/* Need to add offset of 4 when sector higher than FLASH_SECTOR_11 */
if(Sector > FLASH_SECTOR_11)
{
Sector += 4;
}
/* If the previous operation is completed, proceed to erase the sector */
CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
FLASH->CR |= tmp_psize;
CLEAR_BIT(FLASH->CR, FLASH_CR_SNB);
FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB));
FLASH->CR |= FLASH_CR_STRT;
}
/**
* @brief Perform a mass erase or erase the specified FLASH memory sectors with interrupt enabled
* @param pEraseInit pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @retval HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit)
{
HAL_StatusTypeDef status = HAL_OK;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
assert_param(IS_VOLTAGERANGE(pEraseInit->VoltageRange));
assert_param(IS_FLASH_BANK(pEraseInit->Banks));
if((pEraseInit->Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
/* Clear bank 1 pending flags (if any) */
__HAL_FLASH_CLEAR_FLAG_BANK1(FLASH_FLAG_EOP_BANK1 | FLASH_FLAG_ALL_ERRORS_BANK1);
/* Enable End of Operation and Error interrupts for Bank 1 */
__HAL_FLASH_ENABLE_IT_BANK1(FLASH_IT_EOP_BANK1 | FLASH_IT_WRPERR_BANK1 | FLASH_IT_PGSERR_BANK1 | \
FLASH_IT_STRBERR_BANK1 | FLASH_IT_INCERR_BANK1 | FLASH_IT_OPERR_BANK1);
}
if((pEraseInit->Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
/* Clear bank 2 pending flags (if any) */
__HAL_FLASH_CLEAR_FLAG_BANK2(FLASH_FLAG_EOP_BANK2 | FLASH_FLAG_ALL_ERRORS_BANK2);
/* Enable End of Operation and Error interrupts for Bank 2 */
__HAL_FLASH_ENABLE_IT_BANK2(FLASH_IT_EOP_BANK2 | FLASH_IT_WRPERR_BANK2 | FLASH_IT_PGSERR_BANK2 | \
FLASH_IT_STRBERR_BANK2 | FLASH_IT_INCERR_BANK2 | FLASH_IT_OPERR_BANK2);
}
if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
{
/*Mass erase to be done*/
if(pEraseInit->Banks == FLASH_BANK_1)
{
pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE_BANK1;
}
else if(pEraseInit->Banks == FLASH_BANK_2)
{
pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE_BANK2;
}
else
{
pFlash.ProcedureOnGoing = FLASH_PROC_ALLBANK_MASSERASE;
}
FLASH_MassErase(pEraseInit->VoltageRange, pEraseInit->Banks);
}
else
{
/* Erase by sector to be done*/
/* Check the parameters */
assert_param(IS_FLASH_BANK_EXCLUSIVE(pEraseInit->Banks));
assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
if(pEraseInit->Banks == FLASH_BANK_1)
{
pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE_BANK1;
}
else
{
pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE_BANK2;
}
pFlash.NbSectorsToErase = pEraseInit->NbSectors;
pFlash.Sector = pEraseInit->Sector;
pFlash.VoltageForErase = pEraseInit->VoltageRange;
/*Erase 1st sector and wait for IT*/
FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->Banks, pEraseInit->VoltageRange);
}
return status;
}
/**
* @brief Perform a mass erase or erase the specified FLASH memory sectors
* @param[in] pEraseInit pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @param[out] SectorError pointer to variable that
* contains the configuration information on faulty sector in case of error
* (0xFFFFFFFF means that all the sectors have been correctly erased)
*
* @retval HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError)
{
HAL_StatusTypeDef status = HAL_OK;
uint32_t index = 0;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
assert_param(IS_VOLTAGERANGE(pEraseInit->VoltageRange));
assert_param(IS_FLASH_BANK(pEraseInit->Banks));
/* Wait for last operation to be completed */
if((pEraseInit->Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_1);
}
if((pEraseInit->Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
status |= FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_2);
}
if(status == HAL_OK)
{
/*Initialization of SectorError variable*/
*SectorError = 0xFFFFFFFF;
if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
{
/*Mass erase to be done*/
FLASH_MassErase(pEraseInit->VoltageRange, pEraseInit->Banks);
/* Wait for last operation to be completed */
if((pEraseInit->Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_1);
/* if the erase operation is completed, disable the Bank1 BER Bit */
FLASH->CR1 &= (~FLASH_CR_BER);
}
if((pEraseInit->Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
status |= FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_2);
/* if the erase operation is completed, disable the Bank2 BER Bit */
FLASH->CR2 &= (~FLASH_CR_BER);
}
}
else
{
/* Check the parameters */
assert_param(IS_FLASH_BANK_EXCLUSIVE(pEraseInit->Banks));
assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
/* Erase by sector by sector to be done*/
for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++)
{
FLASH_Erase_Sector(index, pEraseInit->Banks, pEraseInit->VoltageRange);
if((pEraseInit->Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_1);
/* If the erase operation is completed, disable the SER Bit */
FLASH->CR1 &= (~(FLASH_CR_SER | FLASH_CR_SNB));
}
if((pEraseInit->Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_2);
/* If the erase operation is completed, disable the SER Bit */
FLASH->CR2 &= (~(FLASH_CR_SER | FLASH_CR_SNB));
}
if(status != HAL_OK)
{
/* In case of error, stop erase procedure and return the faulty sector*/
*SectorError = index;
break;
}
}
}
}
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
/**
* @brief Erases all FLASH Sectors.
*
* @note If an erase and a program operations are requested simustaneously,
* the erase operation is performed before the program one.
*
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
*
* @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM,
* FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE.
*/
FLASH_Status FLASH_EraseAllSectors(uint8_t VoltageRange)
{
#if defined (STM32F427X) || defined (STM32F40XX)
uint32_t tmp_psize;
#endif
/* Wait for last operation to be completed */
FLASH_Status status = FLASH_WaitForLastOperation();
assert_param(IS_VOLTAGERANGE(VoltageRange));
#if defined (STM32F427X) || defined (STM32F40XX)
if(VoltageRange == VoltageRange_1)
{
tmp_psize = FLASH_PSIZE_BYTE;
}
else if(VoltageRange == VoltageRange_2)
{
tmp_psize = FLASH_PSIZE_HALF_WORD;
}
else if(VoltageRange == VoltageRange_3)
{
tmp_psize = FLASH_PSIZE_WORD;
}
else
{
tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
}
if(status == FLASH_COMPLETE)
{
/* if the previous operation is completed, proceed to erase all sectors */
#if defined (STM32F427X)
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= tmp_psize;
FLASH->CR |= (FLASH_CR_MER1 | FLASH_CR_MER2);
FLASH->CR |= FLASH_CR_STRT;
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation();
/* if the erase operation is completed, disable the MER Bit */
FLASH->CR &= ~(FLASH_CR_MER1 | FLASH_CR_MER2);
#endif /* STM32F427X */
#ifdef STM32F40XX
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= tmp_psize;
FLASH->CR |= FLASH_CR_MER;
FLASH->CR |= FLASH_CR_STRT;
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation();
/* if the erase operation is completed, disable the MER Bit */
FLASH->CR &= (~FLASH_CR_MER);
#endif /* STM32F40XX */
}
#else
(void)VoltageRange;
#endif
/* Return the Erase Status */
return status;
}
