status_code_t nvm_write_char(mem_type_t mem, uint32_t address, uint8_t data)
{
switch (mem) {
case INT_FLASH:
nvm_flash_erase_and_write_buffer((flash_addr_t)address,
(const void *)&data, 1, true);
break;
case INT_USERPAGE:
nvm_user_sig_write_buffer((flash_addr_t)address,
(const void *)&data, 1, true);
break;
case INT_EEPROM:
nvm_eeprom_write_byte((eeprom_addr_t)address, data);
break;
#if defined(USE_EXTMEM) && defined(CONF_BOARD_AT45DBX)
case AT45DBX:
if (!at45dbx_write_byte_open(address)) {
return ERR_BAD_ADDRESS;
}
at45dbx_write_byte(data);
at45dbx_write_close();
#endif
default:
return ERR_INVALID_ARG;
}
return STATUS_OK;
}
status_code_t nvm_write_char(mem_type_t mem, uint32_t address, uint8_t data)
{
switch (mem) {
case INT_FLASH:
case INT_USERPAGE:
flash_api_memcpy((volatile void *)address, (const void *)&data,
1, true);
break;
#if defined(USE_EXTMEM) && defined(CONF_BOARD_AT45DBX)
case AT45DBX:
if (!at45dbx_write_byte_open(address)) {
return ERR_BAD_ADDRESS;
}
at45dbx_write_byte(data);
at45dbx_write_close();
#endif
default:
return ERR_INVALID_ARG;
}
return STATUS_OK;
}
/**
* \brief Test the read and write byte operations on the DataFlash
*
* This function will test the read and write functionalities of the DataFlash
* using byte access. It will first write a known pattern on the 2 first
* consecutive sectors and read it back by testing each value read.\n
* In addition to test the data integrity and the byte read / write
* functions, this will also test the continuity of the sectors as well as the
* auto-incrementation of the DataFlash address.
*
* \param test Current test case.
*/
static void run_byte_access_test(const struct test_case *test)
{
uint32_t i;
bool status;
uint8_t byte;
/* Write bytes one by one to the 2 first continuous sectors
*/
status = at45dbx_write_byte_open(0);
test_assert_true(test, status == true,
"Cannot open the DataFlash memory for write access");
for (i=0; i<AT45DBX_SECTOR_SIZE * 2; i++) {
status = at45dbx_write_byte(BYTE_PATTERN1(i));
test_assert_true(test, status == true,
"Write byte operation error @ 0x%08x", i);
}
at45dbx_write_close();
/* Read back the 2 first sectors of the DataFlash and check the values
*/
status = at45dbx_read_byte_open(0);
test_assert_true(test, status == true,
"Cannot open the DataFlash memory for read access");
for (i=0; i<AT45DBX_SECTOR_SIZE * 2; i++) {
byte = at45dbx_read_byte();
test_assert_true(test, byte == BYTE_PATTERN1(i),
"Read byte operation error @ 0x%08x"
" (read: 0x%02x, expected: 0x%02x)", i,
byte, BYTE_PATTERN1(i));
}
at45dbx_read_close();
}
status_code_t nvm_write_char(mem_type_t mem, uint32_t address, uint8_t data)
{
switch (mem) {
case INT_FLASH:
#if SAM4S
/*! This erases 8 pages of flash before writing */
if (flash_erase_page(address, IFLASH_ERASE_PAGES_8)) {
return ERR_INVALID_ARG;
} else if (flash_write(address, (const void *)&data, 1,
false)) {
return ERR_INVALID_ARG;
}
#else
if (flash_write(address, (const void *)&data, 1, true)) {
return ERR_INVALID_ARG;
}
#endif
break;
#if SAM4S
case INT_USERPAGE:
if (flash_write_user_signature((const void *)&data, 1)) {
return ERR_INVALID_ARG;
}
break;
#endif
#if defined(USE_EXTMEM) && defined(CONF_BOARD_AT45DBX)
case AT45DBX:
if (!at45dbx_write_byte_open() address) {
return ERR_BAD_ADDRESS;
}
at45dbx_write_byte(data);
at45dbx_write_close();
at45dbx_read_byte_open(address);
read = at45dbx_read_byte();
at45dbx_read_close();
break;
#endif
default:
return ERR_INVALID_ARG;
}
return STATUS_OK;
}