Modified by Paolo Nenzi 2002
File: b3soifd.c 98/5/01
**********/
/*
* Revision 2.1 99/9/27 Pin Su
* BSIMFD2.1 release
*/
#include "ngspice/ngspice.h"
#include "ngspice/devdefs.h"
#include "b3soifddef.h"
#include "ngspice/suffix.h"
IFparm B3SOIFDpTable[] = { /* parameters */
IOP( "l", B3SOIFD_L, IF_REAL , "Length"),
IOP( "w", B3SOIFD_W, IF_REAL , "Width"),
IOP( "m", B3SOIFD_M, IF_REAL , "Parallel Multiplier"),
IOP( "ad", B3SOIFD_AD, IF_REAL , "Drain area"),
IOP( "as", B3SOIFD_AS, IF_REAL , "Source area"),
IOP( "pd", B3SOIFD_PD, IF_REAL , "Drain perimeter"),
IOP( "ps", B3SOIFD_PS, IF_REAL , "Source perimeter"),
IOP( "nrd", B3SOIFD_NRD, IF_REAL , "Number of squares in drain"),
IOP( "nrs", B3SOIFD_NRS, IF_REAL , "Number of squares in source"),
IOP( "off", B3SOIFD_OFF, IF_FLAG , "Device is initially off"),
IP( "ic", B3SOIFD_IC, IF_REALVEC , "Vector of DS,GS,BS initial voltages"),
OP( "gmbs", B3SOIFD_GMBS, IF_REAL, "Gmb"),
OP( "gm", B3SOIFD_GM, IF_REAL, "Gm"),
OP( "gm/ids", B3SOIFD_GMID, IF_REAL, "Gm/Ids"),
OP( "gds", B3SOIFD_GDS, IF_REAL, "Gds"),
OP( "vdsat", B3SOIFD_VDSAT, IF_REAL, "Vdsat"),
OPU("cqbc", VBIC_QUEST_CQBC, IF_REAL, "Cap. due to charge storage in B-C jct."),
OPU("qbx", VBIC_QUEST_QBX, IF_REAL, "Charge storage B-X junction"),
OPU("cqbx", VBIC_QUEST_CQBX, IF_REAL, "Cap. due to charge storage in B-X jct."),
OPU("sens_dc", VBIC_QUEST_SENS_DC, IF_REAL, "DC sensitivity "),
OPU("sens_real",VBIC_QUEST_SENS_REAL, IF_REAL, "Real part of AC sensitivity"),
OPU("sens_imag",VBIC_QUEST_SENS_IMAG,IF_REAL, "DC sens. & imag part of AC sens."),
OPU("sens_mag", VBIC_QUEST_SENS_MAG, IF_REAL, "Sensitivity of AC magnitude"),
OPU("sens_ph", VBIC_QUEST_SENS_PH, IF_REAL, "Sensitivity of AC phase"),
OPU("sens_cplx",VBIC_QUEST_SENS_CPLX, IF_COMPLEX, "AC sensitivity")
};
IFparm VBICmPTable[] = { /* model parameters */
OP("type", VBIC_MOD_TYPE, IF_STRING, "NPN or PNP"),
IOPU("npn", VBIC_MOD_NPN, IF_FLAG, "NPN type device"),
IOPU("pnp", VBIC_MOD_PNP, IF_FLAG, "PNP type device"),
IOP("tnom", VBIC_MOD_TNOM, IF_REAL, "Parameter measurement temperature"),
IOP("rcx", VBIC_MOD_RCX, IF_REAL, "Extrinsic coll resistance"),
IOP("rci", VBIC_MOD_RCI, IF_REAL, "Intrinsic coll resistance"),
IOP("vo", VBIC_MOD_VO, IF_REAL, "Epi drift saturation voltage"),
IOP("gamm", VBIC_MOD_GAMM, IF_REAL, "Epi doping parameter"),
IOP("hrcf", VBIC_MOD_HRCF, IF_REAL, "High current RC factor"),
IOP("rbx", VBIC_MOD_RBX, IF_REAL, "Extrinsic base resistance"),
IOP("rbi", VBIC_MOD_RBI, IF_REAL, "Intrinsic base resistance"),
IOP("re", VBIC_MOD_RE, IF_REAL, "Intrinsic emitter resistance"),
IOP("rs", VBIC_MOD_RS, IF_REAL, "Intrinsic substrate resistance"),
IOP("rbp", VBIC_MOD_RBP, IF_REAL, "Parasitic base resistance"),
IOP("is", VBIC_MOD_IS, IF_REAL, "Transport saturation current"),
IOP("nf", VBIC_MOD_NF, IF_REAL, "Forward emission coefficient"),
IOP("nr", VBIC_MOD_NR, IF_REAL, "Reverse emission coefficient"),
IOP("fc", VBIC_MOD_FC, IF_REAL, "Fwd bias depletion capacitance limit"),
IOP("cbeo", VBIC_MOD_CBEO, IF_REAL, "Extrinsic B-E overlap capacitance"),
OPU( "sens_l_cplx", MOS1_L_SENS_CPLX,IF_COMPLEX, "ac sensitivity wrt length"),
OPU( "sens_w_dc", MOS1_W_SENS_DC, IF_REAL, "dc sensitivity wrt width"),
OPU( "sens_w_real", MOS1_W_SENS_REAL,IF_REAL,
"real part of ac sensitivity wrt width"),
OPU( "sens_w_imag", MOS1_W_SENS_IMAG,IF_REAL,
"imag part of ac sensitivity wrt width"),
OPU( "sens_w_mag", MOS1_W_SENS_MAG, IF_REAL,
"sensitivity wrt w of ac magnitude"),
OPU( "sens_w_ph", MOS1_W_SENS_PH, IF_REAL,
"sensitivity wrt w of ac phase"),
OPU( "sens_w_cplx", MOS1_W_SENS_CPLX,IF_COMPLEX, "ac sensitivity wrt width")
};
IFparm MOS1mPTable[] = { /* model parameters */
OP("type", MOS1_MOD_TYPE, IF_STRING, "N-channel or P-channel MOS"),
IOP("vto", MOS1_MOD_VTO, IF_REAL ,"Threshold voltage"),
IOPR("vt0", MOS1_MOD_VTO, IF_REAL ,"Threshold voltage"),
IOP("kp", MOS1_MOD_KP, IF_REAL ,"Transconductance parameter"),
IOP("gamma", MOS1_MOD_GAMMA, IF_REAL ,"Bulk threshold parameter"),
IOP("phi", MOS1_MOD_PHI, IF_REAL ,"Surface potential"),
IOP("lambda",MOS1_MOD_LAMBDA,IF_REAL ,"Channel length modulation"),
IOP("rd", MOS1_MOD_RD, IF_REAL ,"Drain ohmic resistance"),
IOP("rs", MOS1_MOD_RS, IF_REAL ,"Source ohmic resistance"),
IOPA("cbd", MOS1_MOD_CBD, IF_REAL ,"B-D junction capacitance"),
IOPA("cbs", MOS1_MOD_CBS, IF_REAL ,"B-S junction capacitance"),
IOP("is", MOS1_MOD_IS, IF_REAL ,"Bulk junction sat. current"),
IOP("pb", MOS1_MOD_PB, IF_REAL ,"Bulk junction potential"),
IOPA("cgso", MOS1_MOD_CGSO, IF_REAL ,"Gate-source overlap cap."),
IOPA("cgdo", MOS1_MOD_CGDO, IF_REAL ,"Gate-drain overlap cap."),
IOPA("cgbo", MOS1_MOD_CGBO, IF_REAL ,"Gate-bulk overlap cap."),
IOP("rsh", MOS1_MOD_RSH, IF_REAL ,"Sheet resistance"),
IOPAU("ic", DIO_IC, IF_REAL, "Initial device voltage"),
IOPU( "off", DIO_OFF, IF_FLAG, "Initially off"),
OP( "id", DIO_CURRENT,IF_REAL, "Diode current"),
OPR( "c", DIO_CURRENT,IF_REAL, "Diode current"),
OP( "vd", DIO_VOLTAGE,IF_REAL, "Diode voltage"),
OPR( "voltage", DIO_VOLTAGE,IF_REAL, "Diode voltage"),
OPU( "charge", DIO_CHARGE, IF_REAL, "Diode capacitor charge"),
OPU( "capcur", DIO_CAPCUR, IF_REAL, "Diode capacitor current"),
OP( "gd", DIO_CONDUCT,IF_REAL, "Diode conductance"),
OPU( "p", DIO_POWER, IF_REAL, "Diode power"),
IOPU( "temp", DIO_TEMP, IF_REAL, "Instance temperature"),
OP( "cd", DIO_CAP, IF_REAL, "Diode capacitance")
};
static IFparm DIOmPTable[] = { /* model parameters */
IOP( "is", DIO_MOD_IS, IF_REAL, "Saturation current"),
IOP( "rs", DIO_MOD_RS, IF_REAL, "Ohmic resistance"),
IOP( "n", DIO_MOD_N, IF_REAL, "Emission Coefficient"),
IOPA("tt", DIO_MOD_TT, IF_REAL, "Transit Time"),
IOPA("cjo", DIO_MOD_CJO, IF_REAL, "Junction capacitance"),
IOPR("cj0", DIO_MOD_CJO, IF_REAL, "Junction capacitance"),
IOP( "vj", DIO_MOD_VJ, IF_REAL, "Junction potential"),
IOP( "m", DIO_MOD_M, IF_REAL, "Grading coefficient"),
IOP( "eg", DIO_MOD_EG, IF_REAL, "Activation energy"),
IOP( "xti", DIO_MOD_XTI, IF_REAL, "Saturation current temperature exp."),
IOP( "fc", DIO_MOD_FC, IF_REAL, "Forward bias junction fit parameter"),
IOP( "bv", DIO_MOD_BV, IF_REAL, "Reverse breakdown voltage"),
IOP( "ibv", DIO_MOD_IBV, IF_REAL, "Current at reverse breakdown voltage"),
OPU( "cond",DIO_MOD_COND,IF_REAL, "Ohmic conductance"),
IP( "d", DIO_MOD_D, IF_FLAG, "Diode model"),
IOPU("tnom",DIO_MOD_TNOM,IF_REAL, "Parameter measurement temperature"),
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1995 Min-Chie Jeng and Mansun Chan.
Modified by Paolo Nenzi 2002
File: b3v1s.c
**********/
#include "ngspice.h"
#include "devdefs.h"
#include "bsim3v1sdef.h"
#include "suffix.h"
IFparm BSIM3v1SpTable[] = { /* parameters */
IOP( "l", BSIM3v1S_L, IF_REAL , "Length"),
IOP( "w", BSIM3v1S_W, IF_REAL , "Width"),
IOP( "ad", BSIM3v1S_AD, IF_REAL , "Drain area"),
IOP( "as", BSIM3v1S_AS, IF_REAL , "Source area"),
IOP( "pd", BSIM3v1S_PD, IF_REAL , "Drain perimeter"),
IOP( "ps", BSIM3v1S_PS, IF_REAL , "Source perimeter"),
IOP( "nrd", BSIM3v1S_NRD, IF_REAL , "Number of squares in drain"),
IOP( "nrs", BSIM3v1S_NRS, IF_REAL , "Number of squares in source"),
IOP( "off", BSIM3v1S_OFF, IF_FLAG , "Device is initially off"),
IOP( "nqsmod", BSIM3v1S_NQSMOD, IF_INTEGER, "Non-quasi-static model selector"),
IP( "ic", BSIM3v1S_IC, IF_REALVEC , "Vector of DS,GS,BS initial voltages"),
OP( "gmbs", BSIM3v1S_GMBS, IF_REAL, "Gmb"),
OP( "gm", BSIM3v1S_GM, IF_REAL, "Gm"),
OP( "gds", BSIM3v1S_GDS, IF_REAL, "Gds"),
OP( "vdsat", BSIM3v1S_VDSAT, IF_REAL, "Vdsat"),
OP( "vth", BSIM3v1S_VON, IF_REAL, "Vth"),
OP( "id", BSIM3v1S_CD, IF_REAL, "Ids"),
OP( "vbs", BSIM3v1S_VBS, IF_REAL, "Vbs"),
#include "suffix.h"
IFparm LTRApTable[] = { /* parameters */
IOPAU( "v1", LTRA_V1, IF_REAL , "Initial voltage at end 1"),
IOPAU( "v2", LTRA_V2, IF_REAL , "Initial voltage at end 2"),
IOPAU( "i1", LTRA_I1, IF_REAL , "Initial current at end 1"),
IOPAU( "i2", LTRA_I2, IF_REAL , "Initial current at end 2"),
IP("ic", LTRA_IC, IF_REALVEC,"Initial condition vector:v1,i1,v2,i2"),
OPU("pos_node1", LTRA_POS_NODE1,IF_INTEGER,"Positive node of end 1 of t-line"),
OPU("neg_node1", LTRA_NEG_NODE1,IF_INTEGER,"Negative node of end 1 of t.line"),
OPU("pos_node2", LTRA_POS_NODE2,IF_INTEGER,"Positive node of end 2 of t-line"),
OPU("neg_node2", LTRA_NEG_NODE2,IF_INTEGER,"Negative node of end 2 of t-line")
};
IFparm LTRAmPTable[] = { /* model parameters */
IOP( "ltra", LTRA_MOD_LTRA, IF_FLAG, "LTRA model"),
IOPU( "r", LTRA_MOD_R, IF_REAL , "Resistance per metre"),
IOPAU( "l", LTRA_MOD_L, IF_REAL , "Inductance per metre"),
IOPR( "g", LTRA_MOD_G, IF_REAL , "Conductance per metre"),
IOPAU( "c", LTRA_MOD_C, IF_REAL , "Capacitance per metre"),
IOPU( "len", LTRA_MOD_LEN, IF_REAL , "length of line"),
OP( "rel", LTRA_MOD_RELTOL, IF_REAL, "Rel. rate of change of deriv. for bkpt"),
OP( "abs", LTRA_MOD_ABSTOL, IF_REAL, "Abs. rate of change of deriv. for bkpt"),
IOPU("nocontrol", LTRA_MOD_NOCONTROL, IF_FLAG, "No timestep control"),
IOPU( "steplimit", LTRA_MOD_STEPLIMIT, IF_FLAG,
"always limit timestep to 0.8*(delay of line)"),
IOPU( "nosteplimit", LTRA_MOD_NOSTEPLIMIT, IF_FLAG,
"don't always limit timestep to 0.8*(delay of line)"),
IOPU( "lininterp", LTRA_MOD_LININTERP, IF_FLAG, "use linear interpolation"),
IOPU("quadinterp", LTRA_MOD_QUADINTERP, IF_FLAG, "use quadratic interpolation"),
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1987 Thomas L. Quarles
**********/
#include "ngspice/ngspice.h"
#include "ngspice/devdefs.h"
#include "ngspice/ifsim.h"
#include "vccsdefs.h"
#include "ngspice/suffix.h"
IFparm VCCSpTable[] = { /* parameters */
IOPU("gain", VCCS_TRANS, IF_REAL, "Transconductance of source (gain)"),
IOP ( "m", VCCS_M, IF_REAL , "Parallel multiplier"),
IP("sens_trans", VCCS_TRANS_SENS,IF_FLAG,
"flag to request sensitivity WRT transconductance"),
OPU("pos_node", VCCS_POS_NODE, IF_INTEGER, "Positive node of source"),
OPU("neg_node", VCCS_NEG_NODE, IF_INTEGER, "Negative node of source"),
OPU("cont_p_node",VCCS_CONT_P_NODE,IF_INTEGER,
"Positive node of contr. source"),
OPU("cont_n_node",VCCS_CONT_N_NODE,IF_INTEGER,
"Negative node of contr. source"),
IP("ic", VCCS_IC, IF_REAL, "Initial condition of controlling source"),
OP("i", VCCS_CURRENT,IF_REAL, "Output current"),
OP("v", VCCS_VOLTS,IF_REAL, "Voltage across output"),
OP("p", VCCS_POWER, IF_REAL, "Power"),
OPU("sens_dc", VCCS_QUEST_SENS_DC, IF_REAL, "dc sensitivity "),
OPU("sens_real", VCCS_QUEST_SENS_REAL, IF_REAL, "real part of ac sensitivity"),
OPU("sens_imag", VCCS_QUEST_SENS_IMAG, IF_REAL, "imag part of ac sensitivity"),
OPU("sens_mag", VCCS_QUEST_SENS_MAG, IF_REAL, "sensitivity of ac magnitude"),
OPU("sens_ph", VCCS_QUEST_SENS_PH, IF_REAL, "sensitivity of ac phase"),
OP("ggs", JFET_GGS, IF_REAL, "Conductance G-S"),
OP("ggd", JFET_GGD, IF_REAL, "Conductance G-D"),
OPU("qgs", JFET_QGS, IF_REAL,"Charge storage G-S junction"),
OPU("qgd", JFET_QGD, IF_REAL,"Charge storage G-D junction"),
OPU("cqgs",JFET_CQGS, IF_REAL,
"Capacitance due to charge storage G-S junction"),
OPU("cqgd",JFET_CQGD, IF_REAL,
"Capacitance due to charge storage G-D junction"),
OPU("p", JFET_POWER,IF_REAL,"Power dissipated by the JFET"),
};
IFparm JFETmPTable[] = { /* model parameters */
OP("type", JFET_MOD_TYPE, IF_STRING, "N-type or P-type JFET model"),
IP("njf", JFET_MOD_NJF, IF_FLAG,"N type JFET model"),
IP("pjf", JFET_MOD_PJF, IF_FLAG,"P type JFET model"),
IOP("vt0", JFET_MOD_VTO, IF_REAL,"Threshold voltage"),
IOPR("vto", JFET_MOD_VTO, IF_REAL,"Threshold voltage"),
IOP("beta", JFET_MOD_BETA, IF_REAL,"Transconductance parameter"),
IOP("lambda", JFET_MOD_LAMBDA, IF_REAL,"Channel length modulation param."),
IOP("rd", JFET_MOD_RD, IF_REAL,"Drain ohmic resistance"),
OPU("gd", JFET_MOD_DRAINCONDUCT, IF_REAL,"Drain conductance"),
IOP("rs", JFET_MOD_RS, IF_REAL,"Source ohmic resistance"),
OPU("gs",JFET_MOD_SOURCECONDUCT,IF_REAL,"Source conductance"),
IOPA("cgs", JFET_MOD_CGS, IF_REAL,"G-S junction capactance"),
IOPA("cgd", JFET_MOD_CGD, IF_REAL,"G-D junction cap"),
IOP("pb", JFET_MOD_PB, IF_REAL,"Gate junction potential"),
IOP("is", JFET_MOD_IS, IF_REAL,"Gate junction saturation current"),
IOP("fc", JFET_MOD_FC, IF_REAL,"Forward bias junction fit parm."),
/* Modification for Sydney University JFET model */
IOP("b", JFET_MOD_B, IF_REAL,"Doping tail parameter"),
/* end Sydney University mod. */
#include "suffix.h"
/*
Model for uniform RC line
*/
IFparm URCpTable[] = { /* parameters */
IOPU( "l", URC_LEN, IF_REAL, "Length of transmission line"),
IOPU( "n", URC_LUMPS, IF_REAL, "Number of lumps"),
OPU( "pos_node",URC_POS_NODE,IF_INTEGER,"Positive node of URC"),
OPU( "neg_node",URC_NEG_NODE,IF_INTEGER,"Negative node of URC"),
OPU( "gnd", URC_GND_NODE,IF_INTEGER,"Ground node of URC")
};
IFparm URCmPTable[] = { /* model parameters */
IOP( "k", URC_MOD_K, IF_REAL, "Propagation constant"),
IOPA( "fmax", URC_MOD_FMAX, IF_REAL, "Maximum frequency of interest"),
IOP( "rperl", URC_MOD_RPERL, IF_REAL, "Resistance per unit length"),
IOPA( "cperl", URC_MOD_CPERL, IF_REAL, "Capacitance per unit length"),
IOP( "isperl", URC_MOD_ISPERL, IF_REAL, "Saturation current per length"),
IOP( "rsperl", URC_MOD_RSPERL, IF_REAL, "Diode resistance per length"),
IP( "urc", URC_MOD_URC, IF_FLAG, "Uniform R.C. line model")
};
char *URCnames[] = {
"P1",
"P2",
"Ref"
};
int URCnSize = NUMELEMS(URCnames);
#include "suffix.h"
IFparm LTRApTable[] = { /* parameters */
IOPAU("v1", LTRA_V1, IF_REAL, "Initial voltage at end 1"),
IOPAU("v2", LTRA_V2, IF_REAL, "Initial voltage at end 2"),
IOPAU("i1", LTRA_I1, IF_REAL, "Initial current at end 1"),
IOPAU("i2", LTRA_I2, IF_REAL, "Initial current at end 2"),
IP("ic", LTRA_IC, IF_REALVEC, "Initial condition vector:v1,i1,v2,i2"),
OPU("pos_node1", LTRA_POS_NODE1, IF_INTEGER, "Positive node of end 1 of t-line"),
OPU("neg_node1", LTRA_NEG_NODE1, IF_INTEGER, "Negative node of end 1 of t.line"),
OPU("pos_node2", LTRA_POS_NODE2, IF_INTEGER, "Positive node of end 2 of t-line"),
OPU("neg_node2", LTRA_NEG_NODE2, IF_INTEGER, "Negative node of end 2 of t-line")
};
IFparm LTRAmPTable[] = { /* model parameters */
IOP("ltra", LTRA_MOD_LTRA, IF_FLAG, "LTRA model"),
IOPU("r", LTRA_MOD_R, IF_REAL, "Resistance per metre"),
IOPAU("l", LTRA_MOD_L, IF_REAL, "Inductance per metre"),
IOPR("g", LTRA_MOD_G, IF_REAL, "Conductance per metre"),
IOPAU("c", LTRA_MOD_C, IF_REAL, "Capacitance per metre"),
IOPU("len", LTRA_MOD_LEN, IF_REAL, "length of line"),
OP("rel", LTRA_MOD_RELTOL, IF_REAL, "Rel. rate of change of deriv. for bkpt"),
OP("abs", LTRA_MOD_ABSTOL, IF_REAL, "Abs. rate of change of deriv. for bkpt"),
IOPU("nocontrol", LTRA_MOD_NOCONTROL, IF_FLAG, "No timestep control"),
IOPU("steplimit", LTRA_MOD_STEPLIMIT, IF_FLAG,
"always limit timestep to 0.8*(delay of line)"),
IOPU("nosteplimit", LTRA_MOD_NOSTEPLIMIT, IF_FLAG,
"don't always limit timestep to 0.8*(delay of line)"),
IOPU("lininterp", LTRA_MOD_LININTERP, IF_FLAG, "use linear interpolation"),
IOPU("quadinterp", LTRA_MOD_QUADINTERP, IF_FLAG, "use quadratic interpolation"),
OPU("sens_w_dc", MOS3_W_SENS_DC, IF_REAL, "dc sensitivity wrt width"),
OPU("sens_w_real",MOS3_W_SENS_REAL, IF_REAL,
"real part of ac sensitivity wrt width"),
OPU("sens_w_imag",MOS3_W_SENS_IMAG, IF_REAL,
"imag part of ac sensitivity wrt width"),
OPU("sens_w_mag", MOS3_W_SENS_MAG, IF_REAL,
"sensitivity wrt w of ac magnitude"),
OPU("sens_w_ph", MOS3_W_SENS_PH, IF_REAL, "sensitivity wrt w of ac phase"),
OPU("sens_w_cplx",MOS3_W_SENS_CPLX, IF_COMPLEX, "ac sensitivity wrt width")
};
IFparm MOS3mPTable[] = { /* model parameters */
OP("type", MOS3_MOD_TYPE, IF_STRING ,"N-channel or P-channel MOS"),
IP("nmos", MOS3_MOD_NMOS, IF_FLAG ,"N type MOSfet model"),
IP("pmos", MOS3_MOD_PMOS, IF_FLAG ,"P type MOSfet model"),
IOP("vto", MOS3_MOD_VTO, IF_REAL ,"Threshold voltage"),
IOPR("vt0", MOS3_MOD_VTO, IF_REAL ,"Threshold voltage"),
IOP("kp", MOS3_MOD_KP, IF_REAL ,"Transconductance parameter"),
IOP("gamma", MOS3_MOD_GAMMA, IF_REAL ,"Bulk threshold parameter"),
IOP("phi", MOS3_MOD_PHI, IF_REAL ,"Surface potential"),
IOP("rd", MOS3_MOD_RD, IF_REAL ,"Drain ohmic resistance"),
IOP("rs", MOS3_MOD_RS, IF_REAL ,"Source ohmic resistance"),
IOPA("cbd", MOS3_MOD_CBD, IF_REAL ,"B-D junction capacitance"),
IOPA("cbs", MOS3_MOD_CBS, IF_REAL ,"B-S junction capacitance"),
IOP("is", MOS3_MOD_IS, IF_REAL ,"Bulk junction sat. current"),
IOP("pb", MOS3_MOD_PB, IF_REAL ,"Bulk junction potential"),
IOPA("cgso", MOS3_MOD_CGSO, IF_REAL ,"Gate-source overlap cap."),
IOPA("cgdo", MOS3_MOD_CGDO, IF_REAL ,"Gate-drain overlap cap."),
IOPA("cgbo", MOS3_MOD_CGBO, IF_REAL ,"Gate-bulk overlap cap."),
IOP("rsh", MOS3_MOD_RSH, IF_REAL ,"Sheet resistance"),
IOPA("cj", MOS3_MOD_CJ, IF_REAL ,"Bottom junction cap per area"),
* Copyright 2000 Regents of the University of California. All rights reserved.
* File: b4.c of BSIM4.2.0.
* Authors: Weidong Liu, Xuemei Xi, Kanyu M. Cao, Xiaodong Jin, Chenming Hu.
* Project Director: Prof. Chenming Hu.
*
* Modified by Xuemei Xi, 04/06/2001.
**********/
#include "spice.h"
#include <stdio.h>
#include "devdefs.h"
#include "bsim4def.h"
#include "suffix.h"
IFparm BSIM4pTable[] = { /* parameters */
IOP( "l", BSIM4_L, IF_REAL , "Length"),
IOP( "w", BSIM4_W, IF_REAL , "Width"),
IOP( "nf", BSIM4_NF, IF_REAL , "Number of fingers"),
IOP( "min", BSIM4_MIN, IF_INTEGER , "Minimize either D or S"),
IOP( "ad", BSIM4_AD, IF_REAL , "Drain area"),
IOP( "as", BSIM4_AS, IF_REAL , "Source area"),
IOP( "pd", BSIM4_PD, IF_REAL , "Drain perimeter"),
IOP( "ps", BSIM4_PS, IF_REAL , "Source perimeter"),
IOP( "nrd", BSIM4_NRD, IF_REAL , "Number of squares in drain"),
IOP( "nrs", BSIM4_NRS, IF_REAL , "Number of squares in source"),
IOP( "off", BSIM4_OFF, IF_FLAG , "Device is initially off"),
IOP( "rbdb", BSIM4_RBDB, IF_REAL , "Body resistance"),
IOP( "rbsb", BSIM4_RBSB, IF_REAL , "Body resistance"),
IOP( "rbpb", BSIM4_RBPB, IF_REAL , "Body resistance"),
IOP( "rbps", BSIM4_RBPS, IF_REAL , "Body resistance"),
IOP( "rbpd", BSIM4_RBPD, IF_REAL , "Body resistance"),
/**********
Imported from MacSpice3f4 - Antony Wilson
Modified: Paolo Nenzi
**********/
#include "ngspice/ngspice.h"
#include "ngspice/ifsim.h"
#include "ngspice/devdefs.h"
#include "hfetdefs.h"
#include "ngspice/suffix.h"
IFparm HFETApTable[] = { /* parameters */
OP("off", HFETA_OFF, IF_FLAG ,"Device initially off"),
IOP("l", HFETA_LENGTH, IF_REAL ,"Length of device"),
IOP("w", HFETA_WIDTH, IF_REAL ,"Width of device"),
IOP("m", HFETA_M, IF_REAL ,"Parallel Multiplier"),
IOP("icvds", HFETA_IC_VDS, IF_REAL ,"Initial D-S voltage"),
IOP("icvgs", HFETA_IC_VGS, IF_REAL ,"Initial G-S voltage"),
IOP("temp", HFETA_TEMP, IF_REAL ,"Instance temperature"),
IOP("dtemp", HFETA_DTEMP, IF_REAL ,"Instance temperature difference"),
OP("dnode", HFETA_DRAINNODE, IF_INTEGER,"Number of drain node"),
OP("gnode", HFETA_GATENODE, IF_INTEGER,"Number of gate node"),
OP("snode", HFETA_SOURCENODE, IF_INTEGER,"Number of source node"),
OP("dprimenode",HFETA_DRAINPRIMENODE, IF_INTEGER,"Number of internal drain node"),
OP("sprimenode",HFETA_SOURCEPRIMENODE,IF_INTEGER,"Number of internal source node"),
OP("vgs", HFETA_VGS, IF_REAL,"Gate-Source voltage"),
OP("vgd", HFETA_VGD, IF_REAL,"Gate-Drain voltage"),
OP("cg", HFETA_CG, IF_REAL,"Gate capacitance"),
OP("cd", HFETA_CD, IF_REAL,"Drain capacitance"),
OP("cgd", HFETA_CGD, IF_REAL,"Gate_Drain capacitance"),
OP("gm", JFET_GM, IF_REAL, "Transconductance"),
OP("gds", JFET_GDS, IF_REAL, "Conductance D-S"),
OP("ggs", JFET_GGS, IF_REAL, "Conductance G-S"),
OP("ggd", JFET_GGD, IF_REAL, "Conductance G-D"),
OPU("qgs", JFET_QGS, IF_REAL,"Charge storage G-S junction"),
OPU("qgd", JFET_QGD, IF_REAL,"Charge storage G-D junction"),
OPU("cqgs",JFET_CQGS, IF_REAL,
"Capacitance due to charge storage G-S junction"),
OPU("cqgd",JFET_CQGD, IF_REAL,
"Capacitance due to charge storage G-D junction"),
OPU("p", JFET_POWER,IF_REAL,"Power dissipated by the JFET"),
};
IFparm JFETmPTable[] = { /* model parameters */
OP("type", JFET_MOD_TYPE, IF_STRING, "N-type or P-type JFET model"),
IOP("njf", JFET_MOD_NJF, IF_FLAG,"N type JFET model"),
IOP("pjf", JFET_MOD_PJF, IF_FLAG,"P type JFET model"),
IOP("vt0", JFET_MOD_VTO, IF_REAL,"Threshold voltage"),
IOPR("vto", JFET_MOD_VTO, IF_REAL,"Threshold voltage"),
IOP("beta", JFET_MOD_BETA, IF_REAL,"Transconductance parameter"),
IOP("lambda", JFET_MOD_LAMBDA, IF_REAL,"Channel length modulation param."),
IOP("rd", JFET_MOD_RD, IF_REAL,"Drain ohmic resistance"),
OPU("gd", JFET_MOD_DRAINCONDUCT, IF_REAL,"Drain conductance"),
IOP("rs", JFET_MOD_RS, IF_REAL,"Source ohmic resistance"),
OPU("gs",JFET_MOD_SOURCECONDUCT,IF_REAL,"Source conductance"),
IOPA("cgs", JFET_MOD_CGS, IF_REAL,"G-S junction capactance"),
IOPA("cgd", JFET_MOD_CGD, IF_REAL,"G-D junction cap"),
IOP("pb", JFET_MOD_PB, IF_REAL,"Gate junction potential"),
IOP("is", JFET_MOD_IS, IF_REAL,"Gate junction saturation current"),
IOP("fc", JFET_MOD_FC, IF_REAL,"Forward bias junction fit parm."),
/* Modification for Sydney University JFET model */
"dc sensitivity wrt width"),
OPU( "sens_w_real", MOS2_W_SENS_REAL, IF_REAL,
"dc sensitivity and real part of ac sensitivity wrt width"),
OPU( "sens_w_imag", MOS2_W_SENS_IMAG, IF_REAL,
"imag part of ac sensitivity wrt width"),
OPU( "sens_w_mag", MOS2_W_SENS_MAG, IF_REAL,
"sensitivity wrt w of ac magnitude"),
OPU( "sens_w_ph", MOS2_W_SENS_PH, IF_REAL,
"sensitivity wrt w of ac phase"),
OPU( "sens_w_cplx", MOS2_W_SENS_CPLX, IF_COMPLEX,
"ac sensitivity wrt width")
};
IFparm MOS2mPTable[] = { /* model parameters */
OP("type", MOS2_MOD_TYPE, IF_STRING ,"N-channel or P-channel MOS"),
IOP("vto", MOS2_MOD_VTO, IF_REAL ,"Threshold voltage"),
IOPR("vt0", MOS2_MOD_VTO, IF_REAL ,"Threshold voltage"),
IOP("kp", MOS2_MOD_KP, IF_REAL ,"Transconductance parameter"),
IOP("gamma", MOS2_MOD_GAMMA, IF_REAL ,"Bulk threshold parameter"),
IOP("phi", MOS2_MOD_PHI, IF_REAL ,"Surface potential"),
IOP("lambda",MOS2_MOD_LAMBDA,IF_REAL ,"Channel length modulation"),
IOP("rd", MOS2_MOD_RD, IF_REAL ,"Drain ohmic resistance"),
IOP("rs", MOS2_MOD_RS, IF_REAL ,"Source ohmic resistance"),
IOP("cbd", MOS2_MOD_CBD, IF_REAL ,"B-D junction capacitance"),
IOP("cbs", MOS2_MOD_CBS, IF_REAL ,"B-S junction capacitance"),
IOP("is", MOS2_MOD_IS, IF_REAL ,"Bulk junction sat. current"),
IOP("pb", MOS2_MOD_PB, IF_REAL ,"Bulk junction potential"),
IOPA("cgso", MOS2_MOD_CGSO, IF_REAL ,"Gate-source overlap cap."),
IOPA("cgdo", MOS2_MOD_CGDO, IF_REAL ,"Gate-drain overlap cap."),
IOPA("cgbo", MOS2_MOD_CGBO, IF_REAL ,"Gate-bulk overlap cap."),
IOP("rsh", MOS2_MOD_RSH, IF_REAL ,"Sheet resistance"),
HiSIM (Hiroshima University STARC IGFET Model)
Copyright (C) 2003 STARC
VERSION : HiSIM 1.2.0
FILE : hsm1.c of HiSIM 1.2.0
April 9, 2003 : released by STARC Physical Design Group
***********************************************************************/
#include "ngspice.h"
#include "devdefs.h"
#include "hsm1def.h"
#include "suffix.h"
IFparm HSM1pTable[] = { /* parameters */
IOP( "l", HSM1_L, IF_REAL , "Length"),
IOP( "w", HSM1_W, IF_REAL , "Width"),
IOP( "ad", HSM1_AD, IF_REAL , "Drain area"),
IOP( "as", HSM1_AS, IF_REAL , "Source area"),
IOP( "pd", HSM1_PD, IF_REAL , "Drain perimeter"),
IOP( "ps", HSM1_PS, IF_REAL , "Source perimeter"),
IOP( "nrd", HSM1_NRD, IF_REAL , "Number of squares in drain"),
IOP( "nrs", HSM1_NRS, IF_REAL , "Number of squares in source"),
IOP( "temp", HSM1_TEMP, IF_REAL , "Lattice temperature"),
IOP( "dtemp", HSM1_DTEMP,IF_REAL , ""),
IOP( "off", HSM1_OFF, IF_FLAG , "Device is initially off"),
IP ( "ic", HSM1_IC, IF_REALVEC , "Vector of DS,GS,BS initial voltages"),
IOP( "m", HSM1_M, IF_REAL , "Parallel multiplier")
};
IFparm HSM1mPTable[] = { /* model parameters */
NULL,
INDpzLoad,
NULL,
NULL, /* DISTO */
NULL, /* NOISE */
&INDiSize,
&INDmSize
};
#ifdef MUTUAL
static IFparm MUTpTable[] = { /* parameters */
IOPAP("k", MUT_COEFF,IF_REAL, "Mutual inductance"),
IOPR( "coefficient",MUT_COEFF,IF_REAL, "Mutual inductance"),
IOP( "inductor1", MUT_IND1, IF_INSTANCE, "First coupled inductor"),
IOP( "inductor2", MUT_IND2, IF_INSTANCE, "Second coupled inductor"),
};
/* model parameters */
/* static IFparm MUTmPTable[] = { }; */
static IFkeys MUTkeys[] = {
{ 'k', 0, NULL, 0, 2 },
};
static int MUTkSize = NUMELEMS(MUTkeys);
static int MUTpTSize = NUMELEMS(MUTpTable);
static int MUTmPTSize = 0;
static int MUTiSize = sizeof(MUTinstance);
OP("gm", JFET2_GM, IF_REAL, "Transconductance"),
OP("gds", JFET2_GDS, IF_REAL, "Conductance D-S"),
OP("ggs", JFET2_GGS, IF_REAL, "Conductance G-S"),
OP("ggd", JFET2_GGD, IF_REAL, "Conductance G-D"),
OPU("qgs", JFET2_QGS, IF_REAL, "Charge storage G-S junction"),
OPU("qgd", JFET2_QGD, IF_REAL, "Charge storage G-D junction"),
OPU("cqgs", JFET2_CQGS, IF_REAL, "Capacitance due to charge storage G-S junction"),
OPU("cqgd", JFET2_CQGD, IF_REAL, "Capacitance due to charge storage G-D junction"),
OPU("p", JFET2_POWER,IF_REAL, "Power dissipated by the JFET2"),
OPU("vtrap",JFET2_VTRAP,IF_REAL, "Quiescent drain feedback potential"),
OPU("vpave",JFET2_PAVE, IF_REAL, "Quiescent power dissipation"),
};
IFparm JFET2mPTable[] = { /* model parameters */
OP("type", JFET2_MOD_TYPE, IF_STRING, "N-type or P-type JFET2 model"),
IOP("njf", JFET2_MOD_NJF, IF_FLAG,"N type JFET2 model"),
IOP("pjf", JFET2_MOD_PJF, IF_FLAG,"P type JFET2 model"),
#define PARAM(code,id,flag,ref,default,descrip) IOP(code,id,IF_REAL,descrip),
#define PARAMR(code,id,flag,ref,default,descrip) IOPR(code,id,IF_REAL,descrip),
#define PARAMA(code,id,flag,ref,default,descrip) IOPA(code,id,IF_REAL,descrip),
#include "jfet2parm.h"
OPU("gd", JFET2_MOD_DRAINCONDUCT, IF_REAL,"Drain conductance"),
OPU("gs", JFET2_MOD_SOURCECONDUCT,IF_REAL,"Source conductance"),
IOPU("tnom", JFET2_MOD_TNOM, IF_REAL,"parameter measurement temperature"),
};
char *JFET2names[] = {
"Drain",
"Gate",
**********/
#include "ngspice/ngspice.h"
#include "ngspice/devdefs.h"
#include "numosdef.h"
#include "ngspice/suffix.h"
/*
* This file defines the 2d Numerical MOSFET data structures that are
* available to the next level(s) up the calling hierarchy
*/
IFparm NUMOSpTable[] = { /* parameters */
IP("off", NUMOS_OFF, IF_FLAG, "Device initially off"),
IP("ic.file", NUMOS_IC_FILE, IF_STRING, "Initial condition file"),
IOP("area", NUMOS_AREA, IF_REAL, "Area factor"),
IOP("w", NUMOS_WIDTH, IF_REAL, "Width factor"),
IOP("l", NUMOS_LENGTH, IF_REAL, "Length factor"),
IP("save", NUMOS_PRINT, IF_INTEGER, "Save solutions"),
IP("print", NUMOS_PRINT, IF_INTEGER, "Print solutions"),
OP("g11", NUMOS_G11, IF_REAL, "Conductance"),
OP("c11", NUMOS_C11, IF_REAL, "Capacitance"),
OP("y11", NUMOS_Y11, IF_COMPLEX, "Admittance"),
OP("g12", NUMOS_G12, IF_REAL, "Conductance"),
OP("c12", NUMOS_C12, IF_REAL, "Capacitance"),
OP("y12", NUMOS_Y12, IF_COMPLEX, "Admittance"),
OP("g13", NUMOS_G13, IF_REAL, "Conductance"),
OP("c13", NUMOS_C13, IF_REAL, "Capacitance"),
OP("y13", NUMOS_Y13, IF_COMPLEX, "Admittance"),
OPU("g14", NUMOS_G14, IF_REAL, "Conductance"),
OPU("c14", NUMOS_C14, IF_REAL, "Capacitance"),
/**********
Copyright 1992 Regents of the University of California. All rights reserved.
Author: 1987 Kartikeya Mayaram, U. C. Berkeley CAD Group
**********/
#include "ngspice.h"
#include "devdefs.h"
#include "numddefs.h"
#include "suffix.h"
IFparm NUMDpTable[] = { /* parameters */
IP("off", NUMD_OFF, IF_FLAG, "Initially off"),
IP("ic.file", NUMD_IC_FILE, IF_REAL, "Initial conditions file"),
IOP("area", NUMD_AREA, IF_REAL, "Area factor"),
IP("save", NUMD_PRINT, IF_REAL, "Save Solutions"),
IP("print", NUMD_PRINT, IF_REAL, "Print Solutions"),
OP("vd", NUMD_VD, IF_REAL, "Voltage"),
OP("id", NUMD_ID, IF_REAL, "Current"),
OP("g11", NUMD_G11, IF_REAL, "Conductance"),
OP("c11", NUMD_C11, IF_REAL, "Capacitance"),
OP("y11", NUMD_Y11, IF_COMPLEX, "Admittance"),
OPU("g12", NUMD_G12, IF_REAL, "Conductance"),
OPU("c12", NUMD_C12, IF_REAL, "Capacitance"),
OPU("y12", NUMD_Y12, IF_COMPLEX, "Admittance"),
OPU("g21", NUMD_G21, IF_REAL, "Conductance"),
OPU("c21", NUMD_C21, IF_REAL, "Capacitance"),
OPU("y21", NUMD_Y21, IF_COMPLEX, "Admittance"),
OPU("g22", NUMD_G22, IF_REAL, "Conductance"),
OPU("c22", NUMD_C22, IF_REAL, "Capacitance"),
OPU("y22", NUMD_Y22, IF_COMPLEX, "Admittance"),
OPR("voltage", NUMD_VD, IF_REAL, "Voltage"),
/***
*** Interface: ads2002 2.2.0.0
*** created by: admsXml-2.3.0 - Tue, 13 Apr 2010 13:45:17 ***/
#include "ngspice.h"
#include "devdefs.h"
#include "mextramdefs.h"
#include "suffix.h"
IFparm mextrampTable[] = {
};
IFparm mextrammPTable[] = {
IOP("pnp",mextram_model_pnp,IF_INTEGER,"pnp"),
IOP("npn",mextram_model_npn,IF_INTEGER,"npn"),
IOP("level",mextram_model_LEVEL,IF_INTEGER,"LEVEL"),
IOP("tref",mextram_model_TREF,IF_REAL,"TREF"),
IOP("dta",mextram_model_DTA,IF_REAL,"DTA"),
IOP("exmod",mextram_model_EXMOD,IF_INTEGER,"EXMOD"),
IOP("exphi",mextram_model_EXPHI,IF_INTEGER,"EXPHI"),
IOP("exavl",mextram_model_EXAVL,IF_INTEGER,"EXAVL"),
IOP("is",mextram_model_IS,IF_REAL,"IS"),
IOP("ik",mextram_model_IK,IF_REAL,"IK"),
IOP("ver",mextram_model_VER,IF_REAL,"VER"),
IOP("vef",mextram_model_VEF,IF_REAL,"VEF"),
IOP("bf",mextram_model_BF,IF_REAL,"BF"),
IOP("ibf",mextram_model_IBF,IF_REAL,"IBF"),
IOP("mlf",mextram_model_MLF,IF_REAL,"MLF"),
IOP("xibi",mextram_model_XIBI,IF_REAL,"XIBI"),
IOP("bri",mextram_model_BRI,IF_REAL,"BRI"),
IOP("ibr",mextram_model_IBR,IF_REAL,"IBR"),
/***
*** Interface: ads2002 2.2.0.0
*** created by: admsXml-2.3.0 - Tue, 13 Apr 2010 14:29:51 ***/
#include "ngspice.h"
#include "devdefs.h"
#include "hicum2defs.h"
#include "suffix.h"
IFparm hicum2pTable[] = {
};
IFparm hicum2mPTable[] = {
IOP("pnp",hicum2_model_pnp,IF_INTEGER,"pnp"),
IOP("npn",hicum2_model_npn,IF_INTEGER,"npn"),
IOP("c10",hicum2_model_c10,IF_REAL,"c10"),
IOP("qp0",hicum2_model_qp0,IF_REAL,"qp0"),
IOP("ich",hicum2_model_ich,IF_REAL,"ich"),
IOP("hfe",hicum2_model_hfe,IF_REAL,"hfe"),
IOP("hfc",hicum2_model_hfc,IF_REAL,"hfc"),
IOP("hjei",hicum2_model_hjei,IF_REAL,"hjei"),
IOP("hjci",hicum2_model_hjci,IF_REAL,"hjci"),
IOP("ibeis",hicum2_model_ibeis,IF_REAL,"ibeis"),
IOP("mbei",hicum2_model_mbei,IF_REAL,"mbei"),
IOP("ireis",hicum2_model_ireis,IF_REAL,"ireis"),
IOP("mrei",hicum2_model_mrei,IF_REAL,"mrei"),
IOP("ibeps",hicum2_model_ibeps,IF_REAL,"ibeps"),
IOP("mbep",hicum2_model_mbep,IF_REAL,"mbep"),
IOP("ireps",hicum2_model_ireps,IF_REAL,"ireps"),
IOP("mrep",hicum2_model_mrep,IF_REAL,"mrep"),
IOP("mcf",hicum2_model_mcf,IF_REAL,"mcf"),
