/**
* @brief Erase the specified FLASH memory sector
* @param Sector FLASH sector to erase
* @param Banks Banks to be erased
* This parameter can be one of the following values:
* @arg FLASH_BANK_1: Bank1 to be erased
* @arg FLASH_BANK_2: Bank2 to be erased
* @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased
* @param VoltageRange The device program/erase parallelism.
* This parameter can be one of the following values:
* @arg FLASH_VOLTAGE_RANGE_1 : Flash program/erase by 8 bits
* @arg FLASH_VOLTAGE_RANGE_2 : Flash program/erase by 16 bits
* @arg FLASH_VOLTAGE_RANGE_3 : Flash program/erase by 32 bits
* @arg FLASH_VOLTAGE_RANGE_4 : Flash program/erase by 62 bits
*
* @retval None
*/
void FLASH_Erase_Sector(uint32_t Sector, uint32_t Banks, uint32_t VoltageRange)
{
assert_param(IS_FLASH_BANK_EXCLUSIVE(Banks));
assert_param(IS_VOLTAGERANGE(VoltageRange));
assert_param(IS_FLASH_SECTOR(Sector));
if((Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
/* reset Program/erase VoltageRange for Bank1 */
FLASH->CR1 &= ~(FLASH_CR_PSIZE | FLASH_CR_SNB);
FLASH->CR1 |= (FLASH_CR_SER | VoltageRange | (Sector << POSITION_VAL(FLASH_CR_SNB)));
FLASH->CR1 |= FLASH_CR_START;
}
if((Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
/* reset Program/erase VoltageRange for Bank2 */
FLASH->CR2 &= ~(FLASH_CR_PSIZE | FLASH_CR_SNB);
FLASH->CR2 |= (FLASH_CR_SER | VoltageRange | (Sector << POSITION_VAL(FLASH_CR_SNB)));
FLASH->CR2 |= FLASH_CR_START;
}
}
/**
* @brief Erase the specified FLASH memory sector
* @param Sector: FLASH sector to erase
* The value of this parameter depend on device used within the same series
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
*
* @retval None
*/
void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
{
uint32_t tmp_psize = 0;
/* Check the parameters */
assert_param(IS_FLASH_SECTOR(Sector));
assert_param(IS_VOLTAGERANGE(VoltageRange));
if(VoltageRange == FLASH_VOLTAGE_RANGE_1)
{
tmp_psize = FLASH_PSIZE_BYTE;
}
else if(VoltageRange == FLASH_VOLTAGE_RANGE_2)
{
tmp_psize = FLASH_PSIZE_HALF_WORD;
}
else if(VoltageRange == FLASH_VOLTAGE_RANGE_3)
{
tmp_psize = FLASH_PSIZE_WORD;
}
else
{
tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
}
/* If the previous operation is completed, proceed to erase the sector */
CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
FLASH->CR |= tmp_psize;
CLEAR_BIT(FLASH->CR, FLASH_CR_SNB);
FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB));
FLASH->CR |= FLASH_CR_STRT;
}
/**
* @brief Erases a specified FLASH Sector.
*
* @param FLASH_Sector: The Sector number to be erased.
* This parameter can be a value between FLASH_Sector_0 and FLASH_Sector_11
*
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
*
* @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM,
* FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE.
*/
FLASH_Status FLASH_EraseSector(uint32_t FLASH_Sector, uint8_t VoltageRange)
{
uint32_t tmp_psize = 0x0;
FLASH_Status status = FLASH_COMPLETE;
/* Check the parameters */
assert_param(IS_FLASH_SECTOR(FLASH_Sector));
assert_param(IS_VOLTAGERANGE(VoltageRange));
if(VoltageRange == VoltageRange_1)
{
tmp_psize = FLASH_PSIZE_BYTE;
}
else if(VoltageRange == VoltageRange_2)
{
tmp_psize = FLASH_PSIZE_HALF_WORD;
}
else if(VoltageRange == VoltageRange_3)
{
tmp_psize = FLASH_PSIZE_WORD;
}
else
{
tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
}
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation();
if(status == FLASH_COMPLETE)
{
/* if the previous operation is completed, proceed to erase the sector */
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= tmp_psize;
FLASH->CR &= SECTOR_MASK;
FLASH->CR |= FLASH_CR_SER | FLASH_Sector;
FLASH->CR |= FLASH_CR_STRT;
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation();
/* if the erase operation is completed, disable the SER Bit */
FLASH->CR &= (~FLASH_CR_SER);
FLASH->CR &= SECTOR_MASK;
}
/* Return the Erase Status */
return status;
}
/**
* @brief Erase the specified FLASH memory sector
* @param Sector: FLASH sector to erase
* The value of this parameter depend on device used within the same series
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
*
* @retval None
*/
void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
{
uint32_t tmp_psize = 0;
/* Check the parameters */
assert_param(IS_FLASH_SECTOR(Sector));
assert_param(IS_VOLTAGERANGE(VoltageRange));
if(VoltageRange == FLASH_VOLTAGE_RANGE_1)
{
tmp_psize = FLASH_PSIZE_BYTE;
}
else if(VoltageRange == FLASH_VOLTAGE_RANGE_2)
{
tmp_psize = FLASH_PSIZE_HALF_WORD;
}
else if(VoltageRange == FLASH_VOLTAGE_RANGE_3)
{
tmp_psize = FLASH_PSIZE_WORD;
}
else
{
tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
}
/* Need to add offset of 4 when sector higher than FLASH_SECTOR_11 */
if(Sector > FLASH_SECTOR_11)
{
Sector += 4;
}
/* If the previous operation is completed, proceed to erase the sector */
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= tmp_psize;
FLASH->CR &= SECTOR_MASK;
FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB));
FLASH->CR |= FLASH_CR_STRT;
}
void updateProgram(void)
{
int clear = 0;
int cmdByte, i, temp;
FLASH_EraseResult result;
uint32_t addr, maxAddr = 0;
uint16_t endSector = 0xFFFF;
_ee_getReserved(_AI_EE_RES_ADDR_MAX_SECTOR, &endSector);
if (endSector > APPLICATION_END_SECTOR || !IS_FLASH_SECTOR(endSector))
endSector = APPLICATION_END_SECTOR;
lcd_clear();
lcd_printf("Aithon Board\nProgramming...");
// Unlock the Flash Program Erase controller
FLASH_If_Init();
while (TRUE)
{
led_toggle(0);
cmdByte = getByte();
debugPrintCmd(cmdByte);
switch (cmdByte)
{
case SYNC:
// sync
flushInterface();
sendResponse(SYNC, ACK);
break;
case ERASE_FLASH_START:
if (FLASH_If_Erase_Start() == FLASH_ERASE_IN_PROGRESS)
sendResponse(ERASE_FLASH_START, ACK);
else
sendResponse(ERASE_FLASH_START, NACK);
break;
case ERASE_FLASH_STATUS:
result = FLASH_If_Erase_Status(endSector);
if (result == FLASH_ERASE_COMPLETE)
sendResponse(ERASE_FLASH_STATUS, ACK);
else if (result == FLASH_ERASE_IN_PROGRESS)
sendResponse(ERASE_FLASH_STATUS, BUSY);
else
sendResponse(ERASE_FLASH_STATUS, NACK);
break;
case SET_ADDR:
// Read in the address, MSB first.
addr = 0;
for (i = 0; i < 4; i++)
{
if ((temp = getByte()) == Q_TIMEOUT)
break;
addr |= (((uint8_t) temp) & 0xFF) << (i * 8);
}
// Check for errors.
if (temp == Q_TIMEOUT)
sendResponse(SET_ADDR, NACK);
else
{
sendResponse(SET_ADDR, ACK);
// We'll get relative addresses, so add the start address.
addr += APPLICATION_START_ADDRESS;
}
break;
case CHECK_ADDR:
// Get the checksum
temp = getByte();
if (temp == Q_TIMEOUT)
sendResponse(CHECK_ADDR, NACK);
else
{
// Subtract the start address before calculating the checksum
addr -= APPLICATION_START_ADDRESS;
if (temp == calcChecksum((uint8_t *)&addr, 4))
sendResponse(CHECK_ADDR, ACK);
else
sendResponse(CHECK_ADDR, NACK);
addr += APPLICATION_START_ADDRESS;
}
break;
case FILL_BUFFER:
for (i = 0; i < PACKET_LEN; i++)
{
if ((temp = getByte()) == Q_TIMEOUT)
break;
_buffer[i] = (uint8_t) (temp & 0xFF);
}
if (temp == Q_TIMEOUT)
sendResponse(FILL_BUFFER, NACK);
else
sendResponse(FILL_BUFFER, ACK);
break;
case CHECK_BUFFER:
// Get the checksum
temp = getByte();
if (temp != Q_TIMEOUT && temp == calcChecksum(_buffer, PACKET_LEN))
sendResponse(CHECK_BUFFER, ACK);
else
sendResponse(CHECK_BUFFER, NACK);
break;
case COMMIT_BUFFER:
maxAddr = addr + PACKET_LEN - 1;
if (FLASH_If_Write((__IO uint32_t *)&addr, (uint32_t *)_buffer, PACKET_LEN/4))
sendResponse(COMMIT_BUFFER, NACK);
else
sendResponse(COMMIT_BUFFER, ACK);
break;
case START_PROGRAM:
sendResponse(START_PROGRAM, ACK);
flushInterface();
_ee_putReserved(_AI_EE_RES_ADDR_MAX_SECTOR, FLASH_Addr_To_Sector(maxAddr));
delayS(1);
startProgram();
// ...should never get here
return;
case Q_TIMEOUT:
default:
if (clear == 0) {
lcd_clear();
clear = 1;
}
lcd_printf ("0%x ", cmdByte);
break;
}
}
}
