/**
* @brief Full erase of FLASH memory sectors
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
*
* @param Banks: Banks to be erased
* This parameter can be one of the following values:
* @arg FLASH_BANK_1: Bank1 to be erased
* @arg FLASH_BANK_2: Bank2 to be erased
* @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased
*
* @retval HAL Status
*/
static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks)
{
uint32_t tmp_psize = 0;
/* Check the parameters */
assert_param(IS_VOLTAGERANGE(VoltageRange));
assert_param(IS_FLASH_BANK(Banks));
/* if the previous operation is completed, proceed to erase all sectors */
CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
FLASH->CR |= tmp_psize;
if(Banks == FLASH_BANK_BOTH)
{
/* bank1 & bank2 will be erased*/
FLASH->CR |= FLASH_MER_BIT;
}
else if(Banks == FLASH_BANK_1)
{
/*Only bank1 will be erased*/
FLASH->CR |= FLASH_CR_MER1;
}
else
{
/*Only bank2 will be erased*/
FLASH->CR |= FLASH_CR_MER2;
}
FLASH->CR |= FLASH_CR_STRT;
}
/**
* @brief Enable the write protection of the desired bank1 or bank 2 sectors
*
* @note When the memory read protection level is selected (RDP level = 1),
* it is not possible to program or erase the flash sector i if CortexM4
* debug features are connected or boot code is executed in RAM, even if nWRPi = 1
* @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
*
* @param WRPSector: specifies the sector(s) to be write protected.
* This parameter can be one of the following values:
* @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_23
* @arg OB_WRP_SECTOR_All
* @note BANK2 starts from OB_WRP_SECTOR_12
*
* @param Banks: Enable write protection on all the sectors for the specific bank
* This parameter can be one of the following values:
* @arg FLASH_BANK_1: WRP on all sectors of bank1
* @arg FLASH_BANK_2: WRP on all sectors of bank2
* @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2
*
* @retval HAL FLASH State
*/
static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks)
{
HAL_StatusTypeDef status = HAL_OK;
/* Check the parameters */
assert_param(IS_OB_WRP_SECTOR(WRPSector));
assert_param(IS_FLASH_BANK(Banks));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
if(((WRPSector == OB_WRP_SECTOR_All) && ((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))) ||
(WRPSector < OB_WRP_SECTOR_12))
{
if(WRPSector == OB_WRP_SECTOR_All)
{
/*Write protection on all sector of BANK1*/
*(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~(WRPSector>>12));
}
else
{
/*Write protection done on sectors of BANK1*/
*(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector);
}
}
/**
* @brief Full erase of FLASH memory Bank
* @param Banks: Banks to be erased
* This parameter can be one of the following values:
* @arg FLASH_BANK_1: Bank1 to be erased
* @arg FLASH_BANK_2: Bank2 to be erased
* @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased
*
* @retval None
*/
static void FLASH_MassErase(uint32_t Banks)
{
/* Check the parameters */
assert_param(IS_FLASH_BANK(Banks));
/* Clean the error context */
pFlash.ErrorCode = HAL_FLASH_ERROR_NONE;
#if defined(FLASH_BANK2_END)
if(Banks == FLASH_BANK_BOTH)
{
/* bank1 & bank2 will be erased*/
SET_BIT(FLASH->CR, FLASH_CR_MER);
SET_BIT(FLASH->CR2, FLASH_CR2_MER);
SET_BIT(FLASH->CR, FLASH_CR_STRT);
SET_BIT(FLASH->CR2, FLASH_CR2_STRT);
}
else if(Banks == FLASH_BANK_2)
{
/*Only bank2 will be erased*/
SET_BIT(FLASH->CR2, FLASH_CR2_MER);
SET_BIT(FLASH->CR2, FLASH_CR2_STRT);
}
else
{
#endif /* FLASH_BANK2_END */
/* Only bank1 will be erased*/
SET_BIT(FLASH->CR, FLASH_CR_MER);
SET_BIT(FLASH->CR, FLASH_CR_STRT);
#if defined(FLASH_BANK2_END)
}
#endif /* FLASH_BANK2_END */
}
/**
* @brief Mass erase of FLASH memory
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
*
* @param Banks: Banks to be erased
* This parameter can be one of the following values:
* @arg FLASH_BANK_1: Bank1 to be erased
*
* @retval None
*/
static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks)
{
uint32_t tmp_psize = 0;
/* Check the parameters */
assert_param(IS_VOLTAGERANGE(VoltageRange));
assert_param(IS_FLASH_BANK(Banks));
/* If the previous operation is completed, proceed to erase all sectors */
CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
FLASH->CR |= tmp_psize;
FLASH->CR |= FLASH_CR_MER;
FLASH->CR |= FLASH_CR_STRT;
}
/**
* @brief Enable the write protection of the desired bank1 or bank 2 sectors
* @param WRPSector specifies the sector(s) to be write protected.
* This parameter can be one of the following values:
* @arg WRPSector: A combination of OB_WRP_SECTOR_0 to OB_WRP_SECTOR_0 or OB_WRP_SECTOR_All
*
* @param Banks the specific bank to apply WRP sectors
* This parameter can be one of the following values:
* @arg FLASH_BANK_1: WRP enable on specified bank1 sectors
* @arg FLASH_BANK_2: WRP enable on specified bank2 sectors
* @arg FLASH_BANK_BOTH: WRP enable bank1 and bank2 specified sectors
*
* @retval HAL FLASH State
*/
static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks)
{
HAL_StatusTypeDef status = HAL_OK;
/* Check the parameters */
assert_param(IS_FLASH_BANK(Banks));
if((Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
assert_param(IS_OB_WRP_SECTOR(WRPSector));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_1);
if(status == HAL_OK)
{
FLASH->WPSN_PRG1 &= (~(WRPSector & FLASH_WPSN_WRPSN));
}
}
if((Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
assert_param(IS_OB_WRP_SECTOR(WRPSector));
/* Wait for last operation to be completed */
status |= FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_2);
if(status == HAL_OK)
{
FLASH->WPSN_PRG2 &= (~(WRPSector & FLASH_WPSN_WRPSN));
}
}
if((Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
/* Wait for last operation to be completed */
status |= FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_1);
}
if((Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
/* Wait for last operation to be completed */
status |= FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_2);
}
return status;
}
/**
* @brief Disable the write protection of the desired bank 1 sectors
*
* @note When the memory read protection level is selected (RDP level = 1),
* it is not possible to program or erase the flash sector if CortexM3
* debug features are connected or boot code is executed in RAM, even if nWRPi = 1
*
* @param WRPSector: specifies the sector(s) to be write protected.
* The value of this parameter depend on device used within the same series
*
* @param Banks: Enable write protection on all the sectors for the specific bank
* This parameter can be one of the following values:
* @arg FLASH_BANK_1: WRP on all sectors of bank1
*
* @retval HAL Status
*/
static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks)
{
HAL_StatusTypeDef status = HAL_OK;
/* Check the parameters */
assert_param(IS_OB_WRP_SECTOR(WRPSector));
assert_param(IS_FLASH_BANK(Banks));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
*(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector;
}
return status;
}
/**
* @brief Full erase of FLASH memory sectors
* @param VoltageRange The device program/erase parallelism.
* This parameter can be one of the following values:
* @arg FLASH_VOLTAGE_RANGE_1 : Flash program/erase by 8 bits
* @arg FLASH_VOLTAGE_RANGE_2 : Flash program/erase by 16 bits
* @arg FLASH_VOLTAGE_RANGE_3 : Flash program/erase by 32 bits
* @arg FLASH_VOLTAGE_RANGE_4 : Flash program/erase by 64 bits
*
* @param Banks Banks to be erased
* This parameter can be one of the following values:
* @arg FLASH_BANK_1: Bank1 to be erased
* @arg FLASH_BANK_2: Bank2 to be erased
* @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased
*
* @retval HAL Status
*/
static void FLASH_MassErase(uint32_t VoltageRange, uint32_t Banks)
{
/* Check the parameters */
assert_param(IS_FLASH_BANK(Banks));
assert_param(IS_VOLTAGERANGE(VoltageRange));
/* Flash Mass Erase */
if((Banks & FLASH_BANK_BOTH) == FLASH_BANK_BOTH)
{
/* reset Program/erase VoltageRange for Bank1 */
FLASH->CR1 &= (~FLASH_CR_PSIZE);
/* Bank1 will be erased, and set voltage range*/
FLASH->CR1 |= FLASH_CR_BER | VoltageRange;
FLASH->OPTCR |= FLASH_OPTCR_MER;
}
else
{
/* Proceed to erase Flash Bank */
if((Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
/* reset Program/erase VoltageRange for Bank1 */
FLASH->CR1 &= (~FLASH_CR_PSIZE);
/* Bank1 will be erased, and set voltage range*/
FLASH->CR1 |= FLASH_CR_BER | VoltageRange;
FLASH->CR1 |= FLASH_CR_START;
}
if((Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
/* reset Program/erase VoltageRange for Bank2 */
FLASH->CR2 &= (~FLASH_CR_PSIZE);
/* Bank2 will be erased, and set voltage range*/
FLASH->CR2 |= FLASH_CR_BER | VoltageRange;
FLASH->CR2 |= FLASH_CR_START;
}
}
}
/**
* @brief Program option bytes
* @param pOBInit pointer to an FLASH_OBInitStruct structure that
* contains the configuration information for the programming.
*
* @retval HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_OBProgram(FLASH_OBProgramInitTypeDef *pOBInit)
{
HAL_StatusTypeDef status = HAL_OK;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_OPTIONBYTE(pOBInit->OptionType));
pFlash.ErrorCode = HAL_FLASH_ERROR_NONE;
/*Write protection configuration*/
if((pOBInit->OptionType & OPTIONBYTE_WRP) == OPTIONBYTE_WRP)
{
assert_param(IS_WRPSTATE(pOBInit->WRPState));
assert_param(IS_FLASH_BANK(pOBInit->Banks));
if(pOBInit->WRPState == OB_WRPSTATE_ENABLE)
{
/*Enable of Write protection on the selected Sector*/
status = FLASH_OB_EnableWRP(pOBInit->WRPSector,pOBInit->Banks);
}
else
{
/*Disable of Write protection on the selected Sector*/
status = FLASH_OB_DisableWRP(pOBInit->WRPSector, pOBInit->Banks);
}
if(status != HAL_OK)
{
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
}
/* Read protection configuration */
if((pOBInit->OptionType & OPTIONBYTE_RDP) != RESET)
{
/* Configure the Read protection level */
status = FLASH_OB_RDPConfig(pOBInit->RDPLevel);
if(status != HAL_OK)
{
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
}
/* User Configuration */
if((pOBInit->OptionType & OPTIONBYTE_USER) != RESET)
{
/* Configure the user option bytes */
status = FLASH_OB_UserConfig(pOBInit->USERType, pOBInit->USERConfig);
if(status != HAL_OK)
{
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
}
/* PCROP Configuration */
if((pOBInit->OptionType & OPTIONBYTE_PCROP) != RESET)
{
assert_param(IS_FLASH_BANK(pOBInit->Banks));
/*Configure the Proprietary code readout protection */
status = FLASH_OB_PCROPConfig(pOBInit->PCROPConfig, pOBInit->PCROPStartAddr, pOBInit->PCROPEndAddr, pOBInit->Banks);
if(status != HAL_OK)
{
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
}
/*BOR Level configuration*/
if((pOBInit->OptionType & OPTIONBYTE_BOR) == OPTIONBYTE_BOR)
{
status = FLASH_OB_BOR_LevelConfig(pOBInit->BORLevel);
if(status != HAL_OK)
{
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
}
/*Boot Address configuration*/
if((pOBInit->OptionType & OPTIONBYTE_BOOTADD) == OPTIONBYTE_BOOTADD)
{
status = FLASH_OB_BootAddConfig(pOBInit->BootConfig, pOBInit->BootAddr0, pOBInit->BootAddr1);
if(status != HAL_OK)
{
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
}
/*Bank1 secure area configuration*/
if((pOBInit->OptionType & OPTIONBYTE_SECURE_AREA) == OPTIONBYTE_SECURE_AREA)
{
status = FLASH_OB_SecureAreaConfig(pOBInit->SecureAreaConfig, pOBInit->SecureAreaStartAddr, pOBInit->SecureAreaEndAddr,pOBInit->Banks);
if(status != HAL_OK)
{
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
}
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
/**
* @brief Perform a mass erase or erase the specified FLASH memory sectors with interrupt enabled
* @param pEraseInit pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @retval HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit)
{
HAL_StatusTypeDef status = HAL_OK;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
assert_param(IS_VOLTAGERANGE(pEraseInit->VoltageRange));
assert_param(IS_FLASH_BANK(pEraseInit->Banks));
if((pEraseInit->Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
/* Clear bank 1 pending flags (if any) */
__HAL_FLASH_CLEAR_FLAG_BANK1(FLASH_FLAG_EOP_BANK1 | FLASH_FLAG_ALL_ERRORS_BANK1);
/* Enable End of Operation and Error interrupts for Bank 1 */
__HAL_FLASH_ENABLE_IT_BANK1(FLASH_IT_EOP_BANK1 | FLASH_IT_WRPERR_BANK1 | FLASH_IT_PGSERR_BANK1 | \
FLASH_IT_STRBERR_BANK1 | FLASH_IT_INCERR_BANK1 | FLASH_IT_OPERR_BANK1);
}
if((pEraseInit->Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
/* Clear bank 2 pending flags (if any) */
__HAL_FLASH_CLEAR_FLAG_BANK2(FLASH_FLAG_EOP_BANK2 | FLASH_FLAG_ALL_ERRORS_BANK2);
/* Enable End of Operation and Error interrupts for Bank 2 */
__HAL_FLASH_ENABLE_IT_BANK2(FLASH_IT_EOP_BANK2 | FLASH_IT_WRPERR_BANK2 | FLASH_IT_PGSERR_BANK2 | \
FLASH_IT_STRBERR_BANK2 | FLASH_IT_INCERR_BANK2 | FLASH_IT_OPERR_BANK2);
}
if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
{
/*Mass erase to be done*/
if(pEraseInit->Banks == FLASH_BANK_1)
{
pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE_BANK1;
}
else if(pEraseInit->Banks == FLASH_BANK_2)
{
pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE_BANK2;
}
else
{
pFlash.ProcedureOnGoing = FLASH_PROC_ALLBANK_MASSERASE;
}
FLASH_MassErase(pEraseInit->VoltageRange, pEraseInit->Banks);
}
else
{
/* Erase by sector to be done*/
/* Check the parameters */
assert_param(IS_FLASH_BANK_EXCLUSIVE(pEraseInit->Banks));
assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
if(pEraseInit->Banks == FLASH_BANK_1)
{
pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE_BANK1;
}
else
{
pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE_BANK2;
}
pFlash.NbSectorsToErase = pEraseInit->NbSectors;
pFlash.Sector = pEraseInit->Sector;
pFlash.VoltageForErase = pEraseInit->VoltageRange;
/*Erase 1st sector and wait for IT*/
FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->Banks, pEraseInit->VoltageRange);
}
return status;
}
/**
* @brief Perform a mass erase or erase the specified FLASH memory sectors
* @param[in] pEraseInit pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @param[out] SectorError pointer to variable that
* contains the configuration information on faulty sector in case of error
* (0xFFFFFFFF means that all the sectors have been correctly erased)
*
* @retval HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError)
{
HAL_StatusTypeDef status = HAL_OK;
uint32_t index = 0;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
assert_param(IS_VOLTAGERANGE(pEraseInit->VoltageRange));
assert_param(IS_FLASH_BANK(pEraseInit->Banks));
/* Wait for last operation to be completed */
if((pEraseInit->Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_1);
}
if((pEraseInit->Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
status |= FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_2);
}
if(status == HAL_OK)
{
/*Initialization of SectorError variable*/
*SectorError = 0xFFFFFFFF;
if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
{
/*Mass erase to be done*/
FLASH_MassErase(pEraseInit->VoltageRange, pEraseInit->Banks);
/* Wait for last operation to be completed */
if((pEraseInit->Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_1);
/* if the erase operation is completed, disable the Bank1 BER Bit */
FLASH->CR1 &= (~FLASH_CR_BER);
}
if((pEraseInit->Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
status |= FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_2);
/* if the erase operation is completed, disable the Bank2 BER Bit */
FLASH->CR2 &= (~FLASH_CR_BER);
}
}
else
{
/* Check the parameters */
assert_param(IS_FLASH_BANK_EXCLUSIVE(pEraseInit->Banks));
assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
/* Erase by sector by sector to be done*/
for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++)
{
FLASH_Erase_Sector(index, pEraseInit->Banks, pEraseInit->VoltageRange);
if((pEraseInit->Banks & FLASH_BANK_1) == FLASH_BANK_1)
{
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_1);
/* If the erase operation is completed, disable the SER Bit */
FLASH->CR1 &= (~(FLASH_CR_SER | FLASH_CR_SNB));
}
if((pEraseInit->Banks & FLASH_BANK_2) == FLASH_BANK_2)
{
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, FLASH_BANK_2);
/* If the erase operation is completed, disable the SER Bit */
FLASH->CR2 &= (~(FLASH_CR_SER | FLASH_CR_SNB));
}
if(status != HAL_OK)
{
/* In case of error, stop erase procedure and return the faulty sector*/
*SectorError = index;
break;
}
}
}
}
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
