/**
* @brief NAND memory Block erase
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pAddress : pointer to NAND address structure
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Erase_Block(NAND_HandleTypeDef *hnand, NAND_AddressTypedef *pAddress)
{
uint32_t DeviceAddress = 0;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FMC_NAND_BANK2)
{
DeviceAddress = NAND_DEVICE1;
}
else
{
DeviceAddress = NAND_DEVICE2;
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* Send Erase block command sequence */
*(__IO uint8_t *)((uint32_t)(DeviceAddress | CMD_AREA)) = NAND_CMD_ERASE0;
*(__IO uint8_t *)((uint32_t)(DeviceAddress | ADDR_AREA)) = __ADDR_1st_CYCLE(__ARRAY_ADDRESS(pAddress, hnand));
*(__IO uint8_t *)((uint32_t)(DeviceAddress | ADDR_AREA)) = __ADDR_2nd_CYCLE(__ARRAY_ADDRESS(pAddress, hnand));
*(__IO uint8_t *)((uint32_t)(DeviceAddress | ADDR_AREA)) = __ADDR_3rd_CYCLE(__ARRAY_ADDRESS(pAddress, hnand));
/* for 512 and 1 GB devices, 4th cycle is required */
if(hnand->Info.BlockNbr >= 1024)
{
*(__IO uint8_t *)((uint32_t)(DeviceAddress | ADDR_AREA)) = __ADDR_4th_CYCLE(__ARRAY_ADDRESS(pAddress, hnand));
}
*(__IO uint8_t *)((uint32_t)(DeviceAddress | CMD_AREA)) = NAND_CMD_ERASE1;
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_OK;
}
/**
* @brief Read the NAND memory electronic signature
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pNAND_ID: NAND ID structure
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Read_ID(NAND_HandleTypeDef *hnand, NAND_IDTypeDef *pNAND_ID)
{
__IO uint32_t data = 0;
uint32_t deviceaddress = 0;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FSMC_NAND_BANK2)
{
deviceaddress = NAND_DEVICE1;
}
else
{
deviceaddress = NAND_DEVICE2;
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* Send Read ID command sequence */
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_READID;
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = 0x00;
/* Read the electronic signature from NAND flash */
data = *(__IO uint32_t *)deviceaddress;
/* Return the data read */
pNAND_ID->Maker_Id = __ADDR_1st_CYCLE(data);
pNAND_ID->Device_Id = __ADDR_2nd_CYCLE(data);
pNAND_ID->Third_Id = __ADDR_3rd_CYCLE(data);
pNAND_ID->Fourth_Id = __ADDR_4th_CYCLE(data);
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_OK;
}
/**
* @brief NAND memory Block erase
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pAddress : pointer to NAND address structure
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Erase_Block(NAND_HandleTypeDef *hnand, NAND_AddressTypeDef *pAddress)
{
uint32_t deviceaddress = 0;
uint32_t tickstart = 0;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FSMC_NAND_BANK2)
{
deviceaddress = NAND_DEVICE1;
}
else
{
deviceaddress = NAND_DEVICE2;
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* Send Erase block command sequence */
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_ERASE0;
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = __ADDR_1st_CYCLE(__ARRAY_ADDRESS(pAddress, hnand));
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = __ADDR_2nd_CYCLE(__ARRAY_ADDRESS(pAddress, hnand));
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = __ADDR_3rd_CYCLE(__ARRAY_ADDRESS(pAddress, hnand));
/* for 512 and 1 GB devices, 4th cycle is required */
if(hnand->Info.BlockNbr >= 1024)
{
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = __ADDR_4th_CYCLE(__ARRAY_ADDRESS(pAddress, hnand));
}
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_ERASE1;
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
/* Get tick */
tickstart = HAL_GetTick();
/* Read status until NAND is ready */
while(HAL_NAND_Read_Status(hnand) != NAND_READY)
{
if((HAL_GetTick() - tickstart ) > NAND_WRITE_TIMEOUT)
{
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_TIMEOUT;
}
}
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_OK;
}
/**
* @brief Write Spare area(s) to NAND memory
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pAddress : pointer to NAND address structure
* @param pBuffer : pointer to source buffer to write
* @param NumSpareAreaTowrite : number of spare areas to write to block
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Write_SpareArea(NAND_HandleTypeDef *hnand, NAND_AddressTypeDef *pAddress, uint8_t *pBuffer, uint32_t NumSpareAreaTowrite)
{
__IO uint32_t index = 0;
uint32_t tickstart = 0;
uint32_t deviceaddress = 0, size = 0, num_spare_area_written = 0, addressstatus = NAND_VALID_ADDRESS;
NAND_AddressTypeDef nandaddress;
uint32_t addressoffset = 0;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FSMC_NAND_BANK2)
{
deviceaddress = NAND_DEVICE1;
}
else
{
deviceaddress = NAND_DEVICE2;
}
/* Update the FMC_NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* Save the content of pAddress as it will be modified */
nandaddress.Block = pAddress->Block;
nandaddress.Page = pAddress->Page;
nandaddress.Zone = pAddress->Zone;
/* Spare area(s) write loop */
while((NumSpareAreaTowrite != 0) && (addressstatus == NAND_VALID_ADDRESS))
{
/* update the buffer size */
size = (hnand->Info.SpareAreaSize) + ((hnand->Info.SpareAreaSize) * num_spare_area_written);
/* Get the address offset */
addressoffset = __ARRAY_ADDRESS(&nandaddress, hnand);
/* Send write Spare area command sequence */
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_AREA_C;
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_WRITE0;
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = 0x00;
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = __ADDR_1st_CYCLE(addressoffset);
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = __ADDR_2nd_CYCLE(addressoffset);
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = __ADDR_3rd_CYCLE(addressoffset);
/* for 512 and 1 GB devices, 4th cycle is required */
if(hnand->Info.BlockNbr >= 1024)
{
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = __ADDR_4th_CYCLE(addressoffset);
}
/* Write data to memory */
for(; index < size; index++)
{
*(__IO uint8_t *)deviceaddress = *(uint8_t *)pBuffer++;
}
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_WRITE_TRUE1;
/* Get tick */
tickstart = HAL_GetTick();
/* Read status until NAND is ready */
while(HAL_NAND_Read_Status(hnand) != NAND_READY)
{
if((HAL_GetTick() - tickstart ) > NAND_WRITE_TIMEOUT)
{
return HAL_TIMEOUT;
}
}
/* Increment written spare areas number */
num_spare_area_written++;
/* Decrement spare areas to write */
NumSpareAreaTowrite--;
/* Increment the NAND address */
addressstatus = NAND_AddressIncrement(hnand, &nandaddress);
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_OK;
}
/**
* @brief Read Page(s) from NAND memory block
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pAddress : pointer to NAND address structure
* @param pBuffer : pointer to destination read buffer
* @param NumPageToRead : number of pages to read from block
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Read_Page(NAND_HandleTypeDef *hnand, NAND_AddressTypeDef *pAddress, uint8_t *pBuffer, uint32_t NumPageToRead)
{
__IO uint32_t index = 0;
uint32_t deviceaddress = 0, size = 0, numpagesread = 0, addressstatus = NAND_VALID_ADDRESS;
NAND_AddressTypeDef nandaddress;
uint32_t addressoffset = 0;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FSMC_NAND_BANK2)
{
deviceaddress = NAND_DEVICE1;
}
else
{
deviceaddress = NAND_DEVICE2;
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* Save the content of pAddress as it will be modified */
nandaddress.Block = pAddress->Block;
nandaddress.Page = pAddress->Page;
nandaddress.Zone = pAddress->Zone;
/* Page(s) read loop */
while((NumPageToRead != 0) && (addressstatus == NAND_VALID_ADDRESS))
{
/* update the buffer size */
size = hnand->Info.PageSize + ((hnand->Info.PageSize) * numpagesread);
/* Get the address offset */
addressoffset = __ARRAY_ADDRESS(&nandaddress, hnand);
/* Send read page command sequence */
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_AREA_A;
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = 0x00;
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = __ADDR_1st_CYCLE(addressoffset);
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = __ADDR_2nd_CYCLE(addressoffset);
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = __ADDR_3rd_CYCLE(addressoffset);
/* for 512 and 1 GB devices, 4th cycle is required */
if(hnand->Info.BlockNbr >= 1024)
{
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = __ADDR_4th_CYCLE(addressoffset);
}
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_AREA_TRUE1;
/* Get Data into Buffer */
for(; index < size; index++)
{
*(uint8_t *)pBuffer++ = *(uint8_t *)deviceaddress;
}
/* Increment read pages number */
numpagesread++;
/* Decrement pages to read */
NumPageToRead--;
/* Increment the NAND address */
addressstatus = NAND_AddressIncrement(hnand, &nandaddress);
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_OK;
}
/**
* @brief Write Spare area(s) to NAND memory
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pAddress : pointer to NAND address structure
* @param pBuffer : pointer to source buffer to write
* @param NumSpareAreaTowrite : number of spare areas to write to block
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Write_SpareArea(NAND_HandleTypeDef *hnand, NAND_AddressTypedef *pAddress, uint8_t *pBuffer, uint32_t NumSpareAreaTowrite)
{
__IO uint32_t index = 0;
uint32_t tickstart = 0;
uint32_t deviceAddress = 0, numSpareAreaWritten = 0, nandAddress = 0, addressStatus = NAND_VALID_ADDRESS;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FMC_NAND_BANK2)
{
deviceAddress = NAND_DEVICE1;
}
else
{
deviceAddress = NAND_DEVICE2;
}
/* Update the FMC_NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* Spare area(s) write loop */
while((NumSpareAreaTowrite != 0) && (addressStatus == NAND_VALID_ADDRESS))
{
/* NAND raw address calculation */
nandAddress = __ARRAY_ADDRESS(pAddress, hnand);
/* Send write Spare area command sequence */
*(__IO uint8_t *)((uint32_t)(deviceAddress | CMD_AREA)) = NAND_CMD_AREA_C;
*(__IO uint8_t *)((uint32_t)(deviceAddress | CMD_AREA)) = NAND_CMD_WRITE0;
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = 0x00;
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = __ADDR_1st_CYCLE(nandAddress);
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = __ADDR_2nd_CYCLE(nandAddress);
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = __ADDR_3rd_CYCLE(nandAddress);
/* for 512 and 1 GB devices, 4th cycle is required */
if(hnand->Info.BlockNbr >= 1024)
{
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = __ADDR_4th_CYCLE(nandAddress);
}
/* Write data to memory */
for(index = 0 ; index < hnand->Info.SpareAreaSize; index++)
{
*(__IO uint8_t *)deviceAddress = *(uint8_t *)pBuffer++;
}
*(__IO uint8_t *)((uint32_t)(deviceAddress | CMD_AREA)) = NAND_CMD_WRITE_TRUE1;
/* Read status until NAND is ready */
while(HAL_NAND_Read_Status(hnand) != NAND_READY)
{
/* Get tick */
tickstart = HAL_GetTick();
if((HAL_GetTick() - tickstart ) > NAND_WRITE_TIMEOUT)
{
return HAL_TIMEOUT;
}
}
/* Increment written spare areas number */
numSpareAreaWritten++;
/* Decrement spare areas to write */
NumSpareAreaTowrite--;
/* Increment the NAND address */
HAL_NAND_Address_Inc(hnand, pAddress);
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_OK;
}
/**
* @brief Read Spare area(s) from NAND memory
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pAddress : pointer to NAND address structure
* @param pBuffer: pointer to source buffer to write
* @param NumSpareAreaToRead: Number of spare area to read
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Read_SpareArea(NAND_HandleTypeDef *hnand, NAND_AddressTypedef *pAddress, uint8_t *pBuffer, uint32_t NumSpareAreaToRead)
{
__IO uint32_t index = 0;
uint32_t deviceAddress = 0, numSpareAreaRead = 0, nandAddress = 0, addressStatus = NAND_VALID_ADDRESS;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FMC_NAND_BANK2)
{
deviceAddress = NAND_DEVICE1;
}
else
{
deviceAddress = NAND_DEVICE2;
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* Spare area(s) read loop */
while((NumSpareAreaToRead != 0) && (addressStatus == NAND_VALID_ADDRESS))
{
/* NAND raw address calculation */
nandAddress = __ARRAY_ADDRESS(pAddress, hnand);
/* Send read spare area command sequence */
*(__IO uint8_t *)((uint32_t)(deviceAddress | CMD_AREA)) = NAND_CMD_AREA_C;
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = 0x00;
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = __ADDR_1st_CYCLE(nandAddress);
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = __ADDR_2nd_CYCLE(nandAddress);
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = __ADDR_3rd_CYCLE(nandAddress);
/* for 512 and 1 GB devices, 4th cycle is required */
if(hnand->Info.BlockNbr > 1024)
{
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = __ADDR_4th_CYCLE(nandAddress);
}
*(__IO uint8_t *)((uint32_t)(deviceAddress | CMD_AREA)) = NAND_CMD_AREA_TRUE1;
/* Get Data into Buffer */
for(index = 0 ; index < hnand->Info.SpareAreaSize; index++)
{
*(uint8_t *)pBuffer++ = *(uint8_t *)deviceAddress;
}
/* Increment read spare areas number */
numSpareAreaRead++;
/* Decrement spare areas to read */
NumSpareAreaToRead--;
/* Increment the NAND address */
HAL_NAND_Address_Inc(hnand, pAddress);
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_OK;
}