//**************************************************************************
void eeprom_erase(void)
{
DATA_EEPROM_Unlock(); // разблокировка перед записью
/* Clear all pending flags */
FLASH_ClearFlag(FLASH_FLAG_EOP|FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR
| FLASH_FLAG_SIZERR | FLASH_FLAG_OPTVERR | FLASH_FLAG_OPTVERRUSR);
/* Data EEPROM Fast Word program of FAST_DATA_32 at addresses defined by
DATA_EEPROM_START_ADDR and DATA_EEPROM_END_ADDR */
Address = DATA_EEPROM_START_ADDR;
NbrOfPage = ((DATA_EEPROM_END_ADDR - Address) + 1 ) >> 2;
/* Erase the Data EEPROM Memory pages by Word (32-bit) */
for(j = 0; j < NbrOfPage; j++)
{
FLASHStatus = DATA_EEPROM_EraseWord(Address + (4 * j));
}
DATA_EEPROM_Lock();
/* Check the correctness of written data */
while(Address < DATA_EEPROM_END_ADDR)
{
if(*(__IO uint32_t*)Address != 0x0)
{
DataMemoryProgramStatus = FAILED;
//ОШИБКА стирания !!!!
return;
}
Address = Address + 4;
}
}
/* program half-word */
void DATA_EEPROM_FastProgramHalfWord(uint32_t addr, uint16_t data)
{
uint32_t tmp = 0, tmpaddr = 0;
/* Wait for last operation to be completed */
while (FLASH->SR & FLASH_SR_BSY);
/* Clear the FTDW bit */
FLASH->PECR &= (uint32_t)(~((uint32_t)FLASH_PECR_FTDW));
if (data != 0x0000) {
/* If the previous operation is completed, proceed to write the new data */
*(volatile uint16_t *)addr = data;
/* Wait for last operation to be completed */
while (FLASH->SR & FLASH_SR_BSY);
} else {
/* fits into word */
if ((addr & 0x3) != 0x3) {
tmpaddr = addr & 0xFFFFFFFC;
tmp = * (volatile uint32_t *) tmpaddr;
tmpaddr = 0xFFFF << (0x8 * (addr & 0x3));
tmp &= ~tmpaddr;
/* erase */
DATA_EEPROM_EraseWord(addr & 0xFFFFFFFC);
/* reprogram */
DATA_EEPROM_FastProgramWord((addr & 0xFFFFFFFC), tmp);
/* does not fit into one word */
} else {
DATA_EEPROM_FastProgramByte(addr, data & 0xff);
DATA_EEPROM_FastProgramByte(addr + 1, data >> 8);
}
}
}
/* program byte */
void DATA_EEPROM_FastProgramByte(uint32_t addr, uint8_t data)
{
uint32_t tmp = 0, tmpaddr = 0;
/* Wait for last operation to be completed */
while (FLASH->SR & FLASH_SR_BSY);
/* Clear the FTDW bit */
FLASH->PECR &= (uint32_t)(~((uint32_t)FLASH_PECR_FTDW));
if (data != 0x00) {
/* If the previous operation is completed, proceed to write the new
* data */
*(volatile uint8_t *)addr = data;
/* Wait for last operation to be completed */
while (FLASH->SR & FLASH_SR_BSY);
} else {
/* get word */
tmpaddr = addr & 0xFFFFFFFC;
tmp = * (volatile uint32_t *) tmpaddr;
tmpaddr = 0xFF << (8 * (addr & 0x3));
tmp &= ~tmpaddr;
/* clear */
DATA_EEPROM_EraseWord(addr & 0xFFFFFFFC);
/* re-program */
DATA_EEPROM_FastProgramWord((addr & 0xFFFFFFFC), tmp);
}
}
/**
* @brief This function will erase the memory region.
* @param uint32_t *NVMparam: The pointer to the memory region.
* uint8_t Wordlength: The word length.
* @retval None
*/
void WMBus_PhyEraseNVMParam(uint32_t *NVMparam, uint8_t Wordlength)
{
DATA_EEPROM_Unlock();
for(uint8_t temp=0x00; temp<Wordlength;temp++)
DATA_EEPROM_EraseWord(((uint32_t)EEPROM_NVM_BASE)+temp);
DATA_EEPROM_Lock();
}
void Internal_EE_Erase32(uint16_t position){
DATA_EEPROM_Unlock();
/* Clear all pending flags */
FLASH_ClearFlag(FLASH_FLAG_EOP|FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR
| FLASH_FLAG_SIZERR | FLASH_FLAG_OPTVERR | FLASH_FLAG_OPTVERRUSR);
DATA_EEPROM_EraseWord(INTERNAL_32BIT_START_ADDRESS+4*position);
DATA_EEPROM_Lock();
}
/**
* @brief This function will erase the memory region.
* @param uint32_t Saddress: The strating address to perform action on.
* uint8_t length: The data length to be deleted.
* @retval None
*/
void WMBus_EraseMeterDatabaseFromEEPROM1(uint32_t Saddress, uint8_t Wordlength)
{
DATA_EEPROM_Unlock();
for(uint8_t temp=0x00; temp<Wordlength;temp++)
{
DATA_EEPROM_EraseWord(((uint32_t)Saddress)+(temp*4));
}
DATA_EEPROM_Lock();
}
void Internal_EE_EraseM32(uint16_t start_position, uint16_t NbrOfPositions){
uint16_t i = 0;
DATA_EEPROM_Unlock();
/* Clear all pending flags */
FLASH_ClearFlag(FLASH_FLAG_EOP|FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR
| FLASH_FLAG_SIZERR | FLASH_FLAG_OPTVERR | FLASH_FLAG_OPTVERRUSR);
for(i=0; i<NbrOfPositions; i++){
DATA_EEPROM_EraseWord(INTERNAL_32BIT_START_ADDRESS+start_position+i*4);
}
DATA_EEPROM_Lock();
}
/**
===============================================================================
##### 8 BITS #####
===============================================================================
*/
void Internal_EE_EraseAll8(void){
uint16_t i = 0;
uint16_t NbrOfPagesToErase = 0;
NbrOfPagesToErase = ((INTERNAL_8BIT_END_ADDRESS - INTERNAL_8BIT_START_ADDRESS)+1)>>2;
DATA_EEPROM_Unlock();
FLASH_ClearFlag(FLASH_FLAG_EOP|FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR
| FLASH_FLAG_SIZERR | FLASH_FLAG_OPTVERR | FLASH_FLAG_OPTVERRUSR);
for(i = 0; i<NbrOfPagesToErase; i++){
DATA_EEPROM_EraseWord(INTERNAL_8BIT_START_ADDRESS+4*i);
}
DATA_EEPROM_Lock();
}
/**
* @brief This function will erase the memory region.
* @param uint32_t Saddress: The strating address to perform action on.
* uint8_t length: The data length to be deleted.
* @retval None
*/
void WMBus_EraseMeterDatabaseFromEEPROM(uint8_t *buff, uint32_t Saddress, uint8_t Wordlength)
{
for(uint8_t eeindex=0; eeindex<10; eeindex++)
{
switch(eeindex)
{
case 0:
WMBus_PhyReadMeterDatabase(EEPROM_METER1_DATABASE_START,26, EEPROM_METER1_DATABASE_END);
if(EEpromMtrData[0] == buff[0])
{
Saddress = EEPROM_METER1_DATABASE_START;
DATA_EEPROM_Unlock();
for(uint8_t temp=0x00; temp<Wordlength;temp++)
{
DATA_EEPROM_EraseWord(((uint32_t)Saddress)+(temp*4));
}
DATA_EEPROM_Lock();
return;
}
break;
case 1:
WMBus_PhyReadMeterDatabase(EEPROM_METER2_DATABASE_START, 26, EEPROM_METER2_DATABASE_END);
if(EEpromMtrData[0] == buff[0])
{
Saddress = EEPROM_METER2_DATABASE_START;
DATA_EEPROM_Unlock();
for(uint8_t temp=0x00; temp<Wordlength;temp++)
{
DATA_EEPROM_EraseWord(((uint32_t)Saddress)+(temp*4));
}
DATA_EEPROM_Lock();
return;
}
break;
case 2:
WMBus_PhyReadMeterDatabase(EEPROM_METER3_DATABASE_START, 26, EEPROM_METER3_DATABASE_END);
if(EEpromMtrData[0] == buff[0])
{
Saddress = EEPROM_METER3_DATABASE_START;
DATA_EEPROM_Unlock();
for(uint8_t temp=0x00; temp<Wordlength;temp++)
{
DATA_EEPROM_EraseWord(((uint32_t)Saddress)+(temp*4));
}
DATA_EEPROM_Lock();
return;
}
break;
case 3:
WMBus_PhyReadMeterDatabase(EEPROM_METER4_DATABASE_START, 26, EEPROM_METER4_DATABASE_END);
if(EEpromMtrData[0] == buff[0])
{
Saddress = EEPROM_METER4_DATABASE_START;
DATA_EEPROM_Unlock();
for(uint8_t temp=0x00; temp<Wordlength;temp++)
{
DATA_EEPROM_EraseWord(((uint32_t)Saddress)+(temp*4));
}
DATA_EEPROM_Lock();
return;
}
break;
case 4:
WMBus_PhyReadMeterDatabase(EEPROM_METER5_DATABASE_START, 26, EEPROM_METER5_DATABASE_END);
if(EEpromMtrData[0] == buff[0])
{
Saddress = EEPROM_METER5_DATABASE_START;
DATA_EEPROM_Unlock();
for(uint8_t temp=0x00; temp<Wordlength;temp++)
{
DATA_EEPROM_EraseWord(((uint32_t)Saddress)+(temp*4));
}
DATA_EEPROM_Lock();
return;
}
break;
case 5:
WMBus_PhyReadMeterDatabase(EEPROM_METER6_DATABASE_START, 26, EEPROM_METER6_DATABASE_END);
if(EEpromMtrData[0] == buff[0])
{
Saddress = EEPROM_METER6_DATABASE_START;
DATA_EEPROM_Unlock();
for(uint8_t temp=0x00; temp<Wordlength;temp++)
{
DATA_EEPROM_EraseWord(((uint32_t)Saddress)+(temp*4));
}
DATA_EEPROM_Lock();
return;
}
break;
case 6:
WMBus_PhyReadMeterDatabase(EEPROM_METER7_DATABASE_START, 26, EEPROM_METER7_DATABASE_END);
if(EEpromMtrData[0] == buff[0])
{
Saddress = EEPROM_METER7_DATABASE_START;
DATA_EEPROM_Unlock();
for(uint8_t temp=0x00; temp<Wordlength;temp++)
{
DATA_EEPROM_EraseWord(((uint32_t)Saddress)+(temp*4));
}
DATA_EEPROM_Lock();
return;
}
break;
case 7:
WMBus_PhyReadMeterDatabase(EEPROM_METER8_DATABASE_START, 26, EEPROM_METER8_DATABASE_END);
if(EEpromMtrData[0] == buff[0])
{
Saddress = EEPROM_METER8_DATABASE_START;
DATA_EEPROM_Unlock();
for(uint8_t temp=0x00; temp<Wordlength;temp++)
{
DATA_EEPROM_EraseWord(((uint32_t)Saddress)+(temp*4));
}
DATA_EEPROM_Lock();
return;
}
break;
case 8:
WMBus_PhyReadMeterDatabase(EEPROM_METER9_DATABASE_START, 26, EEPROM_METER9_DATABASE_END);
if(EEpromMtrData[0] == buff[0])
{
Saddress = EEPROM_METER9_DATABASE_START;
DATA_EEPROM_Unlock();
for(uint8_t temp=0x00; temp<Wordlength;temp++)
{
DATA_EEPROM_EraseWord(((uint32_t)Saddress)+(temp*4));
}
DATA_EEPROM_Lock();
return;
}
break;
case 9:
WMBus_PhyReadMeterDatabase(EEPROM_METER_10_DATABASE_START, 26, EEPROM_METER_10_DATABASE_END);
if(EEpromMtrData[0] == buff[0])
{
Saddress = EEPROM_METER_10_DATABASE_START;
DATA_EEPROM_Unlock();
for(uint8_t temp=0x00; temp<Wordlength;temp++)
{
DATA_EEPROM_EraseWord(((uint32_t)Saddress)+(temp*4));
}
DATA_EEPROM_Lock();
return;
}
break;
default:
break;
}
}
}
