/*******************************************************************************
* 函数名称: FLASH_ErasePage
* 功能描述: 擦除一个FLASH页.
* 输入参数: FLASH_Page：需要擦除的页.
* 输出参数: 无
* 返回参数: FLASH 状态: 返回值可以是: FLASH_BUSY,
* FLASH_ERROR_PG, FLASH_ERROR_WRP, FLASH_COMPLETE or
* FLASH_TIMEOUT.
*******************************************************************************/
FLASH_Status FLASH_ErasePage(u32 Page_Address)
{
FLASH_Status status = FLASH_COMPLETE;
/* Check the parameters [检查参数]*/
assert_param(IS_FLASH_ADDRESS(Page_Address));
/* Wait for last operation to be completed [等待最后一个操作完成]*/
status = FLASH_WaitForLastOperation(EraseTimeout);
if(status == FLASH_COMPLETE)
{
/* if the previous operation is completed, proceed to erase the page [如果前一个操作已经完成，]*/
FLASH->CR|= CR_PER_Set;
FLASH->AR = Page_Address;
FLASH->CR|= CR_STRT_Set;
/* Wait for last operation to be completed [等待最后一个操作完成]*/
status = FLASH_WaitForLastOperation(EraseTimeout);
if(status != FLASH_BUSY)
{
/* if the erase operation is completed, disable the PER Bit [如果擦除操作完成，禁止PER位]*/
FLASH->CR &= CR_PER_Reset;
}
}
/* Return the Erase Status [返回擦除状态]*/
return status;
}
/**
* @brief Programs a word at a specified address.
* @param Address: specifies the address to be programmed.
* @param Data: specifies the data to be programmed.
* @retval : FLASH Status: The returned value can be: FLASH_BUSY,
* FLASH_ERROR_PG, FLASH_ERROR_WRP, FLASH_COMPLETE or
* FLASH_TIMEOUT.
*/
FLASH_Status FLASH_ProgramWord(uint32_t Address, uint32_t Data)
{
FLASH_Status status = FLASH_COMPLETE;
/* Check the parameters */
assert_param(IS_FLASH_ADDRESS(Address));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(ProgramTimeout);
if(status == FLASH_COMPLETE) {
/* if the previous operation is completed, proceed to program the new first
half word */
FLASH->CR |= CR_PG_Set;
*(__IO uint16_t*)Address = (uint16_t)Data;
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(ProgramTimeout);
if(status == FLASH_COMPLETE) {
/* if the previous operation is completed, proceed to program the new second
half word */
*(__IO uint16_t*)(Address + 2) = Data >> 16;
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(ProgramTimeout);
if(status != FLASH_BUSY) {
/* Disable the PG Bit */
FLASH->CR &= CR_PG_Reset;
}
} else {
/**
* @brief Programs a half word (16-bit) at a specified address.
* @note This function must be used when the device voltage range is from 2.1V to 3.6V.
* @param Address: specifies the address to be programmed.
* This parameter can be any address in Program memory zone or in OTP zone.
* @param Data: specifies the data to be programmed.
* @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM,
* FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE.
*/
FLASH_Status FLASH_ProgramHalfWord(uint32 Address, uint16 Data)
{
FLASH_Status status = FLASH_BAD_ADDRESS;
if (IS_FLASH_ADDRESS(Address))
{
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(ProgramTimeout);
if(status == FLASH_COMPLETE)
{
/* if the previous operation is completed, proceed to program the new data */
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= FLASH_PSIZE_HALF_WORD;
FLASH->CR |= FLASH_CR_PG;
*(__io uint16*)Address = Data;
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(ProgramTimeout);
if(status != FLASH_TIMEOUT)
{
/* if the program operation is completed, disable the PG Bit */
FLASH->CR &= (~FLASH_CR_PG);
}
}
}
/* Return the Program Status */
return status;
}
/**
* @brief Erases a specified FLASH page.
* @param Page_Address: The page address to be erased.
* @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PG,
* FLASH_ERROR_WRP, FLASH_COMPLETE or FLASH_TIMEOUT.
*/
FLASH_Status FLASH_ErasePage(uint32_t Page_Address)
{
FLASH_Status status = FLASH_COMPLETE;
/* Check the parameters */
assert_param(IS_FLASH_ADDRESS(Page_Address));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(EraseTimeout);
if(status == FLASH_COMPLETE)
{
/* if the previous operation is completed, proceed to erase the page */
FLASH->CR|= CR_PER_Set;
FLASH->AR = Page_Address;
FLASH->CR|= CR_STRT_Set;
/* Wait for last operation to be completed */
#if 0 /* testing erratum bsy - MOD_MTHOMAS_STMLIB */
#ifdef MOD_MTHOMAS_STMLIB
for (volatile int i=0;i<1000;i++);
#endif
#endif
status = FLASH_WaitForLastOperation(EraseTimeout);
if(status != FLASH_TIMEOUT)
{
/* if the erase operation is completed, disable the PER Bit */
FLASH->CR &= CR_PER_Reset;
}
}
/* Return the Erase Status */
return status;
}
/**
* @brief Erases a specified FLASH page.
* @param Page_Address: The page address to be erased.
* @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PG,
* FLASH_ERROR_WRP, FLASH_COMPLETE or FLASH_TIMEOUT.
*/
FLASH_Status FLASH_ErasePage(uint32 Page_Address)
{
FLASH_Status status = FLASH_COMPLETE;
/* Check the parameters */
ASSERT(IS_FLASH_ADDRESS(Page_Address));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(EraseTimeout);
if(status == FLASH_COMPLETE)
{
/* if the previous operation is completed, proceed to erase the page */
FLASH_BASE->CR |= FLASH_CR_PER;
FLASH_BASE->AR = Page_Address;
FLASH_BASE->CR |= FLASH_CR_STRT;
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(EraseTimeout);
if(status != FLASH_TIMEOUT)
{
/* if the erase operation is completed, disable the PER Bit */
FLASH_BASE->CR &= ~FLASH_CR_PER;
}
FLASH_BASE->SR = (FLASH_SR_EOP | FLASH_SR_PGERR | FLASH_SR_WRPRTERR);
}
/* Return the Erase Status */
return status;
}
/**
* @brief Erases a specified FLASH page.
* @param Page_Address: The page address to be erased.
* @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PG,
* FLASH_ERROR_WRP, FLASH_COMPLETE or FLASH_TIMEOUT.
*/
FLASH_Status FLASH_ErasePage(uint32 Page_Address)
{
FLASH_Status status = FLASH_COMPLETE;
/* Check the parameters */
ASSERT(IS_FLASH_ADDRESS(Page_Address));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(EraseTimeout);
if(status == FLASH_COMPLETE)
{
/* if the previous operation is completed, proceed to erase the page */
__set_bits(FLASH_CR, CR_PER_Set);
__write(FLASH_AR, Page_Address);
__set_bits(FLASH_CR, CR_STRT_Set);
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(EraseTimeout);
if(status != FLASH_TIMEOUT)
{
/* if the erase operation is completed, disable the PER Bit */
__clear_bits(FLASH_CR, ~CR_PER_Reset);
}
__write(FLASH_SR, (FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR));
}
/* Return the Erase Status */
return status;
}
/**
* @brief Programs a byte (8-bit) at a specified address.
* @note This function can be used within all the device supply voltage ranges.
* @param Address: specifies the address to be programmed.
* This parameter can be any address in Program memory zone or in OTP zone.
* @param Data: specifies the data to be programmed.
* @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM,
* FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE.
*/
FLASH_Status FLASH_ProgramByte(uint32_t Address, uint8_t Data)
{
FLASH_Status status = FLASH_COMPLETE;
/* Check the parameters */
assert_param(IS_FLASH_ADDRESS(Address));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation();
if(status == FLASH_COMPLETE)
{
/* if the previous operation is completed, proceed to program the new data */
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= FLASH_PSIZE_BYTE;
FLASH->CR |= FLASH_CR_PG;
*(__IO uint8_t*)Address = Data;
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation();
/* if the program operation is completed, disable the PG Bit */
FLASH->CR &= (~FLASH_CR_PG);
}
/* Return the Program Status */
return status;
}
/**
* @brief Programs a half word at a specified address.
* @param Address: specifies the address to be programmed.
* @param Data: specifies the data to be programmed.
* @retval FLASH Status: The returned value can be: FLASH_ERROR_PG,
* FLASH_ERROR_WRP, FLASH_COMPLETE or FLASH_TIMEOUT.
*/
FLASH_Status FLASH_ProgramHalfWord(uint32 Address, uint16 Data)
{
FLASH_Status status = FLASH_BAD_ADDRESS;
if (IS_FLASH_ADDRESS(Address))
{
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(ProgramTimeout);
if(status == FLASH_COMPLETE)
{
/* if the previous operation is completed, proceed to program the new data */
__set_bits(FLASH_CR, CR_PG_Set);
*(__io uint16*)Address = Data;
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(ProgramTimeout);
if(status != FLASH_TIMEOUT)
{
/* if the program operation is completed, disable the PG Bit */
__clear_bits(FLASH_CR, ~CR_PG_Reset);
}
__write(FLASH_SR, (FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR));
}
}
return status;
}
/**
* @brief Programs one byte in program or data EEPROM memory
* @param Address : Address where the byte will be programmed
* @param Data : Value to be programmed
* @retval None
*/
void FLASH_ProgramByte(uint32_t Address, uint8_t Data)
{
/* Check parameters */
assert_param(IS_FLASH_ADDRESS(Address));
*(PointerAttr uint8_t*) (uint16_t)Address = Data;
}
/**
* @brief Erases one byte in the program or data EEPROM memory
* @param Address : Address of the byte to erase
* @retval None
*/
void FLASH_EraseByte(uint32_t Address)
{
/* Check parameter */
assert_param(IS_FLASH_ADDRESS(Address));
*(PointerAttr uint8_t*) (uint16_t)Address = FLASH_CLEAR_BYTE; /* Erase byte */
}
/*
* Erases a specified FLASH page.
* @param Page_Address: The page address to be erased.
* @retval : FLASH Status: The returned value can be: FLASH_BUSY,
* FLASH_ERROR_PG, FLASH_ERROR_WRP, FLASH_COMPLETE or
* FLASH_TIMEOUT.
*/
FLASH_Status FLASH_ErasePage(uint32_t Page_Address)
{
FLASH_Status status = FLASH_COMPLETE;
/* Check the parameters */
assert_param(IS_FLASH_ADDRESS(Page_Address));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(EraseTimeout);
if (status == FLASH_COMPLETE) {
/* if the previous operation is completed, proceed to erase the page */
FLASH->CR|= CR_PER_Set;
FLASH->AR = Page_Address;
FLASH->CR|= CR_STRT_Set;
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(EraseTimeout);
if (status != FLASH_BUSY) {
/* if the erase operation is completed, disable the PER Bit */
FLASH->CR &= CR_PER_Reset;
} /* if (status != FLASH_BUSY) */
} /* if (status == FLASH_COMPLETE) */
/* Return the Erase Status */
return status;
}
/**
* @brief Programs a half word at a specified address.
* @param Address: specifies the address to be programmed.
* @param Data: specifies the data to be programmed.
* @retval FLASH Status: The returned value can be: FLASH_ERROR_PG,
* FLASH_ERROR_WRP, FLASH_COMPLETE or FLASH_TIMEOUT.
*/
FLASH_Status FLASH_ProgramHalfWord(uint32 Address, uint16 Data)
{
FLASH_Status status = FLASH_BAD_ADDRESS;
if (IS_FLASH_ADDRESS(Address))
{
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(ProgramTimeout);
if(status == FLASH_COMPLETE)
{
/* if the previous operation is completed, proceed to program the new data */
FLASH_BASE->CR |= FLASH_CR_PG;
*(__io uint16*)Address = Data;
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation(ProgramTimeout);
if(status != FLASH_TIMEOUT)
{
/* if the program operation is completed, disable the PG Bit */
FLASH_BASE->CR &= ~FLASH_CR_PG;
}
FLASH_BASE->SR = (FLASH_SR_EOP | FLASH_SR_PGERR | FLASH_SR_WRPRTERR);
}
}
return status;
}
/**
* @brief Reads one byte from flash memory
* @param Address: Address to read
* @retval Value of the byte
*/
uint8_t FLASH_ReadByte(uint16_t Address)
{
/* Check parameter */
assert_param(IS_FLASH_ADDRESS(Address));
/* Read byte */
return(*(PointerAttr uint8_t *) (uint16_t)Address);
}
void MacBase::onSend(NetEventDescriptor& ned) {
// must be an ethernet send request
if(ned.eventType!=NetEventDescriptor::NetEventType::ETHERNET_TRANSMIT_REQUEST)
return;
EthernetTransmitRequestEvent& event=static_cast<EthernetTransmitRequestEvent&>(ned);
EthernetFrameData *efd;
// we cannot transmit data out of flash memory because the flash banks are
// not connected to the Ethernet DMA bus on the STM32. More's the pity.
uint32_t ub=reinterpret_cast<uint32_t>(event.networkBuffer->getUserBuffer());
if(ub && IS_FLASH_ADDRESS(ub)) {
delete event.networkBuffer;
this->setError(ErrorProvider::ERROR_PROVIDER_NET_MAC,E_NO_FLASH_DATA);
return;
}
// the NetBuffer needs to get an ethernet header
efd=reinterpret_cast<EthernetFrameData *>(event.networkBuffer->moveWritePointerBack(getDatalinkTransmitHeaderSize()));
efd->eth_destinationAddress=event.macAddress;
efd->eth_sourceAddress=_params.mac_address;
efd->eth_etherType=NetUtil::htons(static_cast<uint16_t>(event.etherType));
uint32_t now=MillisecondTimer::millis();
while(!sendBuffer(event.networkBuffer)) {
if(errorProvider.isLastError(ErrorProvider::ERROR_PROVIDER_NET_MAC,E_BUSY)) {
// DMA still has our TX descriptor. If we're not running in an IRQ context then we
// can wait to see if it frees up
if(Nvic::isAnyIrqActive()) {
delete event.networkBuffer;
return;
}
if(MillisecondTimer::hasTimedOut(now,_params.mac_txWaitMillis)) {
delete event.networkBuffer;
return;
}
}
else {
delete event.networkBuffer;
return; // other error
}
}
// it was sent and the net buffer will be deleted when the TX interrupt is processed
event.succeeded=true;
}
/**
* @brief Program byte (8-bit) at a specified address.
* @note This function must be used when the device voltage range is from
* 1.8V to 3.6V.
*
* @note If an erase and a program operations are requested simultaneously,
* the erase operation is performed before the program one.
*
* @param Address: specifies the address to be programmed.
* @param Data: specifies the data to be programmed.
* @retval None
*/
static void FLASH_Program_Byte(uint32_t Address, uint8_t Data)
{
/* Check the parameters */
assert_param(IS_FLASH_ADDRESS(Address));
/* If the previous operation is completed, proceed to program the new data */
CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
FLASH->CR |= FLASH_PSIZE_BYTE;
FLASH->CR |= FLASH_CR_PG;
*(__IO uint8_t*)Address = Data;
}
/**
* @brief Program a half-word (16-bit) at a specified address.
* @note This function must be used when the device voltage range is from
* 2.7V to 3.6V.
*
* @note If an erase and a program operations are requested simultaneously,
* the erase operation is performed before the program one.
*
* @param Address: specifies the address to be programmed.
* @param Data: specifies the data to be programmed.
* @retval None
*/
static void FLASH_Program_HalfWord(uint32_t Address, uint16_t Data)
{
/* Check the parameters */
assert_param(IS_FLASH_ADDRESS(Address));
/* If the previous operation is completed, proceed to program the new data */
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= FLASH_PSIZE_HALF_WORD;
FLASH->CR |= FLASH_CR_PG;
*(__IO uint16_t*)Address = Data;
}
/**
* @brief Program a double word (64-bit) at a specified address.
* @note This function must be used when the device voltage range is from
* 2.7V to 3.6V and Vpp in the range 7V to 9V.
*
* @note If an erase and a program operations are requested simultaneously,
* the erase operation is performed before the program one.
*
* @param Address specifies the address to be programmed.
* @param Data specifies the data to be programmed.
* @retval None
*/
static void FLASH_Program_DoubleWord(uint32_t Address, uint64_t Data)
{
/* Check the parameters */
assert_param(IS_FLASH_ADDRESS(Address));
/* If the previous operation is completed, proceed to program the new data */
CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
FLASH->CR |= FLASH_PSIZE_DOUBLE_WORD;
FLASH->CR |= FLASH_CR_PG;
/* Program the double-word */
*(__IO uint32_t*)Address = (uint32_t)Data;
*(__IO uint32_t*)(Address+4) = (uint32_t)(Data >> 32);
}
/**
* @brief Program byte (8-bit) at a specified address.
* @note This function must be used when the device voltage range is from
* 2.7V to 3.6V.
*
* @note If an erase and a program operations are requested simultaneously,
* the erase operation is performed before the program one.
*
* @param Address: specifies the address to be programmed.
* @param Data: specifies the data to be programmed.
* @retval None
*/
static void FLASH_Program_Byte(uint32_t Address, uint8_t Data)
{
/* Check the parameters */
assert_param(IS_FLASH_ADDRESS(Address));
/* If the previous operation is completed, proceed to program the new data */
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= FLASH_PSIZE_BYTE;
FLASH->CR |= FLASH_CR_PG;
*(__IO uint8_t*)Address = Data;
/* Data synchronous Barrier (DSB) Just after the write operation
This will force the CPU to respect the sequence of instruction (no optimization).*/
__DSB();
}
/**
* @brief Programs one word (4 bytes) in program or data EEPROM memory
* @param Address : The address where the data will be programmed
* @param Data : Value to be programmed
* @retval None
*/
void FLASH_ProgramWord(uint32_t Address, uint32_t Data)
{
/* Check parameters */
assert_param(IS_FLASH_ADDRESS(Address));
/* Enable Word Write Once */
FLASH->CR2 |= FLASH_CR2_WPRG;
/* Write one byte - from lowest address*/
*((PointerAttr uint8_t*)(uint16_t)Address) = *((uint8_t*)(&Data));
/* Write one byte*/
*(((PointerAttr uint8_t*)(uint16_t)Address) + 1) = *((uint8_t*)(&Data) + 1);
/* Write one byte*/
*(((PointerAttr uint8_t*)(uint16_t)Address) + 2) = *((uint8_t*)(&Data) + 2);
/* Write one byte - from higher address*/
*(((PointerAttr uint8_t*)(uint16_t)Address) + 3) = *((uint8_t*)(&Data) + 3);
}
/**
* @brief Program a double word (64-bit) at a specified address.
* @note This function must be used when the device voltage range is from
* 2.7V to 3.6V and an External Vpp is present.
*
* @note If an erase and a program operations are requested simultaneously,
* the erase operation is performed before the program one.
*
* @param Address specifies the address to be programmed.
* @param Data specifies the data to be programmed.
* @retval None
*/
static void FLASH_Program_DoubleWord(uint32_t Address, uint64_t Data)
{
/* Check the parameters */
assert_param(IS_FLASH_ADDRESS(Address));
/* If the previous operation is completed, proceed to program the new data */
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= FLASH_PSIZE_DOUBLE_WORD;
FLASH->CR |= FLASH_CR_PG;
/* Program the double-word */
*(__IO uint32_t*)Address = (uint32_t)Data;
*(__IO uint32_t*)(Address+4) = (uint32_t)(Data >> 32);
/* Data synchronous Barrier (DSB) Just after the write operation
This will force the CPU to respect the sequence of instruction (no optimization).*/
__DSB();
}
/*******************************************************************************
* 函数名称: FLASH_ProgramWord
* 功能描述: 在特定地址编程一个字.
* 输入参数: (1)Address：将要编程的地址.
* (2)Data：指定被编程的数据.
* 输出参数: 无
* 返回参数: FLASH状态:这个返回值可以是: FLASH_BUSY,
* FLASH_ERROR_PG, FLASH_ERROR_WRP, FLASH_COMPLETE or
* FLASH_TIMEOUT.
*******************************************************************************/
FLASH_Status FLASH_ProgramWord(u32 Address, u32 Data)
{
FLASH_Status status = FLASH_COMPLETE;
/* Check the parameters [检查参数]*/
assert_param(IS_FLASH_ADDRESS(Address));
/* Wait for last operation to be completed [等待最后一个操作完成]*/
status = FLASH_WaitForLastOperation(ProgramTimeout);
if(status == FLASH_COMPLETE)
{
/* if the previous operation is completed, proceed to program the new first
half word [如果前一个操作完成，编程新的第一个半字]*/
FLASH->CR |= CR_PG_Set;
*(vu16*)Address = (u16)Data;
/* Wait for last operation to be completed [等待最后一个操作完成]*/
status = FLASH_WaitForLastOperation(ProgramTimeout);
if(status == FLASH_COMPLETE)
{
/* if the previous operation is completed, proceed to program the new second
half word [如果前一个操作完成，编程新的第二个半字]*/
*(vu16*)(Address + 2) = Data >> 16;
/* Wait for last operation to be completed [等待最后一个操作完成]*/
status = FLASH_WaitForLastOperation(ProgramTimeout);
if(status != FLASH_BUSY)
{
/* Disable the PG Bit [禁止PG位]*/
FLASH->CR &= CR_PG_Reset;
}
}
